HMC772LC4_10

HMC772LC4 v01.0709 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Features Noise figure: 1.8 dB Gain: 15 dB output ip3: +25 dBm p1dB output power: +13 dBm 50 ohm matched input/output supply Voltage: +4V @ 45 mA 24 lead Ceramic 4x4mm smT package: 16mm² 7 Amplifiers - low Noise - smT Typical Applications This HmC772lC4 is ideal for: • wideband Communication systems • surveillance systems • point-to-point radios • point-to-multi-point radios • military & space • Test instrumentation Functional Diagram General Description The HmC772lC4 is a GaAs mmiC HemT low Noise wideband Amplifier which operates between 2 and 12 GHz. The amplifier provides 15 dB of gain, 1.8 dB noise figure up to 12 GHz and output ip3 of +25 dBm, while requiring only 45 mA from a +4V supply voltage. The psat output power of up to +15 dBm enables the lNA to function as a lo driver for many of Hittite’s balanced, i/Q or image reject mixers. The HmC772lC4 also features i/os that are DC blocked and internally matched to 50 ohms, making it ideal for smT based high capacity microwave radio applications. The HmC772lC4 is housed in a roHs compliant 4x4 mm QfN leadless ceramic package. Electrical Specifications, TA = +25° C, Vdd= +4V, Idd = 45 mA* parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression output Third order intercept (ip3) supply Current (idd) (Vdd = 4V, Vgg = -0.2V Typ.)* * Adjust Vgg between -1 to 0.3V to achieve idd = 45mA typical. 14 min. Typ. 2 - 12 15 0.01 1.8 15 15 13 25 45 2.5 max. Units GHz dB dB / °C dB dB dB dBm dBm mA 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC772LC4 v01.0709 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Noise Figure vs. Temperature 6 Gain vs. Temperature 20 +25 C +85 C - 40 C 7 Amplifiers - low Noise - smT 7-2 18 5 NOISE FIGURE (dB) 4 3 2 1 0 +25 C +85 C -40 C GAIN (dB) 16 14 12 10 1 3 5 7 9 11 13 15 FREQUENCY (GHz) 1 3 5 7 9 11 13 15 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 1 3 5 7 9 11 13 15 FREQUENCY (GHz) +25 C +85 C - 40 C Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 1 3 5 7 9 11 13 15 FREQUENCY (GHz) +25 C +85 C - 40 C Output P1dB vs. Temperature 18 16 14 12 10 8 6 1 3 5 7 9 11 13 15 FREQUENCY (GHz) Output Psat vs. Temperature 18 16 14 12 10 8 6 1 3 5 7 9 11 13 15 FREQUENCY (GHz) +25 C +85 C - 40 C P1dB (dBm) +25 C +85 C - 40 C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Psat (dBm) HMC772LC4 v01.0709 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Power Compression @ 12 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 7 Amplifiers - low Noise - smT Output IP3 vs. Temperature 30 28 26 IP3 (dBm) 24 22 20 18 1 3 5 7 9 11 13 15 FREQUENCY (GHz) +25 C +85 C - 40 C 15 Pout Gain PAE 10 5 0 -5 -20 -15 -10 -5 0 5 INPUT POWER (dBm) Reverse Isolation vs. Temperature 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 1 3 5 7 9 11 13 15 FREQUENCY (GHz) +25 C +85 C - 40 C Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 24 21 GAIN (dB), P1dB (dBm) 18 15 12 9 6 3 0 3.5 4 Vdd (V) Noise Figure Gain P1dB 8 7 6 5 4 3 2 1 0 4.5 NOISE FIGURE (dB) 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC772LC4 v01.0709 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Absolute Maximum Ratings Drain Bias Voltage Drain Bias Current rf input power Gate Bias Voltage Continuous pdiss (T = 85 °C) (derate 5.8 mw/°C above 85 °C) Thermal resistance (Channel to ground paddle) Channel Temperature storage Temperature operating Temperature +5V 60 mA 5 dBm -1 to 0.3 V 0.55 w 172 °C/w 180 °C -65 to +150 °C -40 to +85 °C 7 eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Outline Drawing NoTes: 1. pACKAGe BoDY mATeriAl: AlUmiNA. 2. leAD AND GroUND pADDle plATiNG: GolD flAsH oVer NiCKel. 3. DimeNsioNs Are iN iNCHes (millimeTers). 4. leAD spACiNG TolerANCe is NoN-CUmUlATiVe. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm DATUm – C – 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 Amplifiers - low Noise - smT HMC772LC4 v01.0709 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz 7 Amplifiers - low Noise - smT Pin Descriptions pin Number 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 3 function GND Description These pins and ground paddle must be connected to rf/DC ground. This pin is AC coupled and matched to 50 ohms. Gate control for amplifier. please follow “mmiC Amplifier Biasing procedure” application note. see application circuit for required external components. interface schematic rfiN 8 Vgg 9 Vdd power supply Voltage for the amplifier. see application circuit for required external components. The pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/DC ground externally. This pin is AC coupled and matched to 50 ohms. 10, 11, 20 - 23 N/C 16 rfoUT Application Circuit 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC772LC4 v01.0709 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 126359 item J1, J2 J3 - J5 C1, C4 C2, C5 C3, C6 U1 pCB [2] Description pCB mount 2.92mm K-Connector DC pin 100 pf Capacitor, 0402 pkg. 1000 pf Capacitor, 0603 pkg. 4.7 µf Capacitor, Tantalum HmC772lC4 Amplifier 126357 evaluation pCB [1] [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25fr The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6