HMC774_10

HMC774 v00.1109 GaAs MMIC FundAMentAl MIxer, 7 - 43 GHz Features Passive: No DC Bias required High input iP3: +22 dBm High LO/rF isolation: 35 dB Wide iF Bandwidth: DC - 10 GHz Upconversion & Downconversion Applications Die size: 1.36 x 0.96 x 0.1 mm typical Applications The HmC774 is ideal for: • Point-to-Point radios 3 mixers - DOUBLe-BALANCeD - CHiP • Point-to-multi-Point radios & VsAT • Test equipment & sensors • military end-Use Functional diagram General description The HmC774 is a general purpose double balanced mixer chip that can be used as an upconverter or downconverter between 7 and 43 GHz. This mixer requires no external components or matching circuitry. The HmC774 provides excellent LO to rF and LO to iF isolation due to optimized balun structures. The mixer operates with LO drive levels of +13 dBm. The HmC774 wideband mixer exhibits consistent conversion gain and compression across its bandwidth. The HmC774 is also available in smT format as the HmC774LC3B. electrical Specifications, tA = +25° C, IF = 0.5 GHz, lO = +13 dBm* Parameter Frequency range, rF & LO Frequency range, iF Conversion Loss LO to rF isolation LO to iF isolation rF to iF isolation iP3 (input) iP2 (input) 1 dB Gain Compression (input) 20 7 min. Typ. 7 - 22 DC - 10 9 35 30 10 20 45 12 25 14 13 max. min. Typ. 22 - 43 DC - 10 10 38 40 20 22 48 13 13 max. Units GHz GHz dB dB dB dB dBm dBm dBm * Unless otherwise noted, all measurements performed as downconverter, IF = 0.5 GHz, LO = +13 dBm 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC774 v00.1109 GaAs MMIC FundAMentAl MIxer, 7 - 43 GHz Isolation 0 -10 Conversion Gain vs. temperature 0 CONVERSION GAIN (dB) -4 ISOLATION (dB) -20 -8 -30 3 LO/RF RF/IF LO/IF 6 10 14 18 22 26 30 34 38 42 46 -12 +25 C +85 C -55 C -40 -16 -50 -20 6 10 14 18 22 26 30 34 38 42 46 -60 RF FREQUENCY (GHz) FREQUENCY (GHz) Conversion Gain vs. lO drive 0 return loss 0 CONVERSION GAIN (dB) -4 -8 RETURN LOSS (dB) -5 -10 -12 11 dBm 13 dBm 15 dBm 17 dBm -16 -15 RF LO -20 6 10 14 18 22 26 30 34 38 42 46 -20 6 10 14 18 22 26 30 34 38 42 46 RF FREQUENCY (GHz) FREQUENCY (GHz) IF Bandwidth 0 -4 upconverter Performance Conversion Gain vs. lO drive 0 -8 CONVERSION GAIN (dB) -4 RESPONSE (dB) -8 -12 -12 11 dBm 13 dBm 15 dBm 17 dBm -16 Conversion Gain IF Return Loss -20 -16 -24 0 2 4 6 8 10 12 -20 6 10 14 18 22 26 30 34 38 42 46 IF FREQUENCY (GHz) RF FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 mixers - DOUBLe-BALANCeD - CHiP HMC774 v00.1109 GaAs MMIC FundAMentAl MIxer, 7 - 43 GHz Input IP3 vs. temperature [1] 35 30 25 Input IP3 vs. lO drive [1] 35 30 25 IP3 (dBm) 20 15 10 5 0 6 10 14 18 22 26 30 34 38 42 46 11 dBm 13 dBm 15 dBm 17 dBm IP3 (dBm) 3 mixers - DOUBLe-BALANCeD - CHiP 20 15 10 5 0 6 10 14 18 22 26 30 34 38 42 46 +25 C +85 C -55 C RF FREQUENCY (GHz) RF FREQUENCY (GHz) Input IP2 vs. lO drive [1] 70 60 Input IP2 vs. temperature [1] 70 60 50 50 IP2 (dBm) 40 IP2 (dBm) 40 30 20 11 dBm 13 dBm 15 dBm 17 dBm 30 20 +25 C +85 C -55 C 10 6 10 14 18 22 26 30 34 38 42 46 10 6 10 14 18 22 26 30 34 38 42 46 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Input P1dB vs. temperature 20 16 P1dB (dBm) 12 8 +25 C +85 C -55 C 4 0 6 10 14 18 22 26 30 34 38 42 46 RF FREQUENCY (GHz) [1] Two-tone input power = -5 dBm each tone, 1 MHz spacing. 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC774 v00.1109 GaAs MMIC FundAMentAl MIxer, 7 - 43 GHz Absolute Maximum ratings rF / iF input 21 dBm 27 dBm 150 °C 189 mW 343 °C/W -65 to +150 °C -55 to +85 °C Mxn Spurious Outputs nLO mrF 0 1 2 3 4 0 xx 5 30 xx xx 1 10 0 49 74 xx 2 39 37 47 62 xx 3 xx 43 55 45 77 4 xx xx 68 63 71 LO Drive Channel Temperature Continuous Pdiss (Ta = 85 °C) (derate 2.9 mW/°C above 85 °C) Thermal resistance (junction to die bottom) storage Temperature Operating Temperature 3 mixers - DOUBLe-BALANCeD - CHiP 3-4 rF = 17.5 GHz @ -10 dBm LO = 18.0 GHz @ +15 dBm All values in dBc below the iF output power level. eLeCTrOsTATiC seNsiTiVe DeViCe OBserVe HANDLiNG PreCAUTiONs Outline drawing For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC774 v00.1109 GaAs MMIC FundAMentAl MIxer, 7 - 43 GHz Pad descriptions Pad Number Function Description interface schematic 3 mixers - DOUBLe-BALANCeD - CHiP 1 LO This pin is DC coupled and matched to 50 Ohms. 2 rF This pin is DC coupled and matched to 50 Ohms. 3 iF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary iF frequency range. For operation to DC, this pin must not source or sink more than 2 mA of current or part non-function and possible part failure will result. Assembly diagram 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC774 v00.1109 GaAs MMIC FundAMentAl MIxer, 7 - 43 GHz Mounting & Bonding techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HmC general Handling, mounting, Bonding Note). 50 Ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rF to and from the chip (Figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length