HMC802LP3E

HMC802LP3E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC802LP3E - 20 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz - Hittite Microw...

  • 详情介绍
  • 数据手册
  • 价格&库存
HMC802LP3E 数据手册
HMC802LP3E v00.0110 20 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz Features ± 0.6 dB typical step error Low Insertion Loss: 3 dB High IP3: +55 dBm single Control Line ttL/CMos Compatible Control single +5V supply 16 Lead 3x3mm sMt Package: 9mm² 5 AttenuAtors - DIGItAL - sMt Typical Applications the HMC802LP3e is ideal for both rF and IF applications: • test equipment and sensors • IsM, MMDs, WLAn, WiMAX, WiBro • Microwave radio & VsAt • Cellular Infrastructure Functional Diagram General Description the HMC802LP3e is a broadband bidirectional 1-bit GaAs IC digital attenuator in a low cost leadless surface mount package. this single positive control line digital attenuator utilizes off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of rF and IF applications. Covering DC to 10 GHz, the insertion loss is less than 3 dB typical and attenuation accuracy is excellent at ±0.6 dB typical. the attenuator also features a high IIP3 of +55 dBm. one ttL/CMos control input is used to select the attenuation state and a single Vdd bias of +5V is required. Electrical Specifications, TA = +25° C, With Vdd = +5V & Vctl = 0/+5V Parameter Insertion Loss Attenuation range return Loss (rF1 & rF2, Both states) Attenuation Accuracy: (referenced to Insertion Loss) Input Power for 0.1 dB Compression Input third order Intercept Point (two-tone Input Power= 0 dBm each tone) switching Characteristics trIse, tFALL (10/90% rF) ton, toFF (50% CtL to 10/90% rF) DC - 10 GHz 120 150 ns ns Frequency (GHz) DC - 4 GHz 4 - 8 GHz 8 - 10 GHz DC - 10 GHz DC - 6 GHz 6 - 10 GHz DC - 8 GHz 8 - 10 GHz DC - 0.4 GHz 0.4 - 10 GHz DC - 0.4 GHz 0.4 - 10 GHz Min. typ. 1.5 3.0 3.5 20 18 12 ± 0.4 ± 0.8 20 30* 45 55 ± 0.6 ± 1.2 Max. 2.5 4.0 4.5 units dB dB dB dB dB dB dB dB dBm dBm dBm * For frequencies greater than 0.4 GHz, the 0.1 dB compression point is greater than the absolute maximum rF input power of 30 dBm. 5-1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC802LP3E v00.0110 20 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz Input Return Loss 0 Insertion Loss 0 -1 INSERTION LOSS (dB) -2 -3 -4 -5 -6 0 2 4 6 8 10 12 FREQUENCY (GHz) 5 AttenuAtors - DIGItAL - sMt 5-2 RETURN LOSS (dB) -10 -20 +25 C +85 C -40 C -30 INSERTION LOSS 20 dB -40 0 2 4 6 8 10 12 FREQUENCY (GHz) Output Return Loss 0 Relative Attenuation -14 NORMALIZED ATTENUATION (dB) 12 -16 -18 -20 -22 -24 -26 RETURN LOSS (dB) -10 -20 -30 INSERTION LOSS 20 dB -40 0 2 4 6 8 10 FREQUENCY (GHz) 0 2 4 6 8 10 12 FREQUENCY (GHz) Relative Phase vs. Frequency 60 40 RELATIVE PHASE (dB) 20 0 -20 -40 -60 0 2 4 6 8 10 12 FREQUENCY (GHz) Bit Error vs. Frequency 2 1.6 1.2 BIT ERROR (dB) 0.8 0.4 0 -0.4 -0.8 -1.2 -1.6 -2 0 2 4 6 8 10 12 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC802LP3E v00.0110 20 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz Input IP3 vs. Frequency (Low Frequency Detail) 70 5 AttenuAtors - DIGItAL - sMt Input IP3 vs. Frequency 70 60 60 IP3 (dBm) 40 INSERTION LOSS 20 dB IP3 (dBm) 50 50 40 INSERTION LOSS 20 dB 30 30 20 0 2 4 6 8 10 12 FREQUENCY (GHz) 20 0 0.1 0.2 0.3 0.4 0.5 FREQUENCY (GHz) Input Power for 0.1 dB Compression* (Low Frequency Detail) 40 P0.1dB INPUT POWER (dBm) 35 30 25 20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 FREQUENCY (GHz) Truth Table Control Voltage Input V1 High Low Attenuation state rF1 - rF2 reference Insertion Loss 20 dB Bias Voltage & Current Vdd = +5 Vdc ± 10% Vdd (Vdc) 4.5 5.0 5.5 Idd (typ.) (mA) 0.21 0.23 0.25 Control Voltage state Low High note: Vdd = +5V Bias Condition 0 to +0.8V @ -1 µA typ. +2 to +5V @ 30 µA typ. * For frequencies greater than 0.4 GHz, the 0.1 dB compression point is greater than the absolute maximum rF input power of 30 dBm. 5-3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC802LP3E v00.0110 20 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz Absolute Maximum Ratings rF Input Power (DC - 10 GHz) Control Voltage range (V1) Bias Voltage (Vdd) Channel temperature Continuous Pdiss (t = 85 °C) (derate 12 mW/°C above 85 °C) thermal resistance (channel to ground paddle) storage temperature operating temperature esD sensitivity (HBM) +30 dBm -1 to Vdd + 1V +7 Vdc 150 °C 0.783 W 83 °C/W -65 to +150 °C -40 to +85 °C Class 1A 5 eLeCtrostAtIC sensItIVe DeVICe oBserVe HAnDLInG PreCAutIons Outline Drawing notes: 1. LeADFrAMe MAterIAL: CoPPer ALLoY 2. DIMensIons Are In InCHes [MILLIMeters] 3. LeAD sPACInG toLerAnCe Is non-CuMuLAtIVe 4. PAD Burr LenGtH sHALL Be 0.15mm MAXIMuM. PAD Burr HeIGHt sHALL Be 0.05mm MAXIMuM. 5. PACKAGe WArP sHALL not eXCeeD 0.05mm. 6. ALL GrounD LeADs AnD GrounD PADDLe Must Be soLDereD to PCB rF GrounD. 7. reFer to HIttIte APPLICAtIon note For suGGesteD LAnD PAttern. Package Information Part number HMC802LP3e Package Body Material roHs-compliant Low stress Injection Molded Plastic Lead Finish 100% matte sn MsL rating MsL1 [1] Package Marking [2] H802 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5-4 AttenuAtors - DIGItAL - sMt HMC802LP3E v00.0110 20 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz 5 AttenuAtors - DIGItAL - sMt Pin Descriptions Pin number 1 Function Vdd Description supply Voltage. these pins and the exposed ground paddle must be connected to rF/DC ground. these pins are DC coupled and matched to 50 ohms. Blocking capacitors are required. select value based on lowest frequency of operation. external capacitor to ground is required. select value for lowest frequency of operation. Place capacitor as close to pins as possible. the pins are not connected internally; however, all data shown herein was measured with these pins connected to rF/DC ground externally. Interface schematic 2, 4, 9, 11 GnD 3, 10 rF1, rF2 5, 7, 8 ACG1, ACG2, ACG3 6, 12, 13, 15, 16 n/C 14 V1 see truth table and control voltage table. Application Circuit 5-5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC802LP3E v00.0110 20 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz Evaluation PCB 5 AttenuAtors - DIGItAL - sMt List of Materials for Evaluation PCB 127103 [1] Item J1, J2 J3, J4 C1 C2, C3 C4 - C6 u1 PCB [2] Description PCB Mount sMA Connector DC Connector 1000 pF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. 330 pF Capacitor, 0402 Pkg. HMC802LP3e Digital Attenuator 121213 evaluation PCB [1] reference this number when ordering complete evaluation PCB [2] Circuit Board Material: rogers 4350 the circuit board used in the application should use rF circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5-6
HMC802LP3E
1. 物料型号: - 型号:HMC802LP3E - 描述:20 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz

2. 器件简介: - HMC802LP3E是一款宽带双向1位GaAs IC数字衰减器,采用低成本无引线表面贴装封装。该单正控制线数字衰减器利用芯片外的交流地电容,适用于多种射频和中频应用。覆盖直流至10 GHz,插入损耗小于3 dB,衰减精度为±0.6 dB。该衰减器还具有高达+55 dBm的高IIP3。使用一个TTL/CMOS控制输入选择衰减状态,需要单个+5V电源。

3. 引脚分配: - 1:Vdd(供电电压) - 2,4,9,11:GND(这些引脚和暴露的接地垫片必须连接到射频/直流地) - 3,10:RF1,RF2(这些引脚是直流耦合的,匹配到50欧姆。需要阻塞电容器,根据最低工作频率选择值) - 5,7,8:ACG1,ACG2,ACG3(需要外部电容到地。根据最低工作频率选择值,尽可能靠近引脚放置电容器) - 6,12,13,15,16:N/C(这些引脚内部未连接,但所有此处显示的数据都是在这些引脚外部连接到射频/直流地的情况下测量的) - 14:Wy(见真值表和控制电压表)

4. 参数特性: - 插入损耗:1.5 dB至4.5 dB - 衰减范围:20 dB - 回波损耗(RF1 & RF2,两种状态):18 dB至12 dB - 衰减精度:±0.4 dB至±1.2 dB - 输入功率用于0.1 dB压缩:20 dBm至30 dBm - 输入三阶截取点(双音输入功率=0 dBm每个音):45 dBm至55 dBm - 切换特性tRISE, tFALL(10/90% RF)tON,tOFF(50% CTL至10/90%RF):120 ns至150 ns

5. 功能详解: - HMC802LP3E是理想的射频和中频应用衰减器,包括测试设备和传感器、ISM、MMDS、WLAN、WiMAX、WiBro、微波无线电和VSAT、蜂窝基础设施等。

6. 应用信息: - 适用于射频和中频应用,覆盖直流至10 GHz,插入损耗小于3 dB,衰减精度为±0.6 dB,高IIP3为+55 dBm。

7. 封装信息: - 封装:16引脚3x3mm表面贴装封装,面积9mm²。 - 材料:符合RoHS的低应力注塑塑料。 - 引脚完成:100%亚光锡。 - MSL等级:MSL1。 - 封装标记:H802 XXXX(4位数字批号)。
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