HMC814

HMC814 v00.1109 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT Features High Output Power: +17 dBm Low Input Power Drive: 0 to +6 dBm Fo Isolation: >20 dBc @ Fout = 19 GHz 100 kHz SSB Phase noise: -136 dBc/Hz Single Supply: +5v @ 88mA Die Size: 1.2 x 1.23 x 0.1 mm 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP Typical Applications The HMc814 is ideal for: • clock Generation Applications: SOnET Oc-192 & SDH STM-64 • Point-to-Point & vSAT Radios • Test Instrumentation • Military & Space • Sensors Functional Diagram General Description The HMc814 is a x2 active broadband frequency multiplier chip utilizing GaAs PHEMT technology. When driven by a +4 dBm signal, the multiplier provides +17 dBm typical output power from 13 to 24.6 GHz. The Fo, 3Fo and 4Fo isolations are >20 dBc at 19 GHz. The HMc814 is ideal for use in LO multiplier chains for Pt-to-Pt & vSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase noise of -136 dBc/Hz at 100 kHz offset helps maintain good system noise performance. All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25 °C, Vdd1, Vdd2 = +5V, +4 dBm Drive Level Parameter Frequency Range, Input Frequency Range, Output Output Power Fo Isolation (with respect to output level) 3Fo Isolation (with respect to output level) Input Return Loss Output Return Loss SSB Phase noise (100 kHz Offset @ Input Frequency = 19 GHz) Supply current (Idd1 & Idd2) 70 14 Min. Typ. 6.5 - 12.3 13.0 - 24.6 17 25 25 7 7 -136 88 100 Max. Units GHz GHz dBm dBc dBc dB dB dBc/Hz mA 2-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC814 v00.1109 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT Output Power vs. Temperature @ +4 dBm Drive Level 20 Output Power vs. Drive Level 25 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 16 15 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP 2-2 0 dBm 1 dBm 2 dBm 3 dBm 4 dBm 5 dBm 6 dBm 12 5 8 +25C +85C -55C -5 4 -15 0 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 -25 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 FREQUENCY (GHz) FREQUENCY (GHz) Output Power vs. Supply Voltage @ +4 dBm Drive Level 20 Isolation @ +4 dBm Drive Level 20 OUTPUT POWER (dBm) 12 OUTPUT POWER (dBm) 16 10 0 8 4.5V 5.0V 5.5V -10 Fo 2 Fo 3 Fo 4 Fo 4 -20 0 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 -30 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 FREQUENCY (GHz) FREQUENCY (GHz) Output Power vs. Input Power 20 OUTPUT POWER (dBm) 15 10 15 GHz 19 GHz 23 GHz 24 GHz 5 0 0 1 2 3 4 5 6 7 8 9 10 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC814 v00.1109 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 RETURN LOSS (dB) 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP 0 -5 -10 -15 +25C +85C -55C -15 +25C +85C -55C -20 -20 -25 -25 -30 6 7 8 9 10 11 12 13 -30 12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5 FREQUENCY (GHz) FREQUENCY (GHz) Phase Noise @ 19 GHz -10 -30 PHASE NOISE (dBc/Hz) -50 -70 -90 -110 -130 -150 -170 2 10 10 3 10 4 10 5 10 6 10 7 10 8 FREQUENCY (Hz) Absolute Maximum Ratings RF Input (vdd = +5v) Supply voltage (vdd1, vdd2) channel Temperature continuous Pdiss (T= 85 °c) (derate 8.7 mW/°c above 85 °c) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +10 dBm +5.5 vdc 175 °c 782 mW 115 °c/W -65 to +150 °c -55 to +85 °c Typical Supply Current vs. Vdd vdd (vdc) 4.5 5.0 5.5 Idd (mA) 87 88 89 note: Multiplier will operate over full voltage range shown above. ELEcTROSTATIc SEnSITIvE DEvIcE OBSERvE HAnDLInG PREcAUTIOnS 2-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC814 v00.1109 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT Outline Drawing 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP 2-4 nOTES: 1. ALL DIMEnSIOnS ARE In IncHES [MM] 2. DIE THIcKnESS IS .004” 3. TyPIcAL BOnD PAD IS .004” SQUARE 4. BOnD PAD METALIZATIOn: GOLD 5. BAcKSIDE METALIZATIOn: GOLD 6. BAcKSIDE METAL IS GROUnD 7. nO cOnnEcTIOn REQUIRED FOR UnLABELED BOnD PADS 8. OvERALL DIE SIZE ±.002” For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC814 v00.1109 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT Pin Description 2 FREQUEncy MULTIPLIERS - AcTIvE - cHIP Pin number 1 Function RFIn Description Pin is Ac coupled and matched to 50 Ohms. Interface Schematic 2, 3 vdd1, vdd2 Supply voltage 5v ± 0.5v. External bypass capacitors of 100 pF, 1,000 pF and 2.2 µF are recommended. 4 RFOUT Pin is Ac coupled and matched to 50 Ohms. Assembly Diagram 2-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC814 v00.1109 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMc general Handling, Mounting, Bonding note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length