HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
Features
Low Noise Figure: 0.5 dB High Gain: 22 dB High Output IP3: +37 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16 mm2
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC816LP4E is ideal for: • Cellular/3G and LTE/WiMAX/4G • BTS & Infrastructure • Repeaters and Femtocells • Public Safety Radio • Multi-Channel Applications
Functional Diagram
General Description
The HMC816LP4E is a GaAs PHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC816LP4E shares the same package and pinout with the HMC817LP4E & HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application.
Electrical Specifi cations, TA = +25° C, Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
Vdd = +3V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 24 10 10 17 Typ. 230 - 450 21 0.001 0.5 13 12 14 15 26 34 44 24 13 14 0.9 14 Max. Min. Typ. 450 - 660 17 0.002 0.5 17 10 16 16.5 28 34 44 68 15 16 0.9 19 Max. Min. Typ. 230 - 450 22 0.005 0.5 15 13 19 20 34 97 126 68 18 18 0.9 15 Max. Min. Typ. 450 - 660 19 0.007 0.5 16 10 21 21 37 97 126 0.9 Max. MHz dB dB/ °C dB dB dB dBm dBm dBm mA Vdd = +5V Units
* Rbias sets current, see application circuit herein
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F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
Broadband Gain & Return Loss
25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20
S11 S22 Vdd= 5V Vdd= 3V S21
Gain vs. Temperature [1]
24
8
LOW NOISE AMPLIFIERS - SMT
8 - 363
22
GAIN (dB)
20
18
+25C +85C - 40C
16
-25 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 1.2 1.4
14 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7
Gain vs. Temperature [2]
24
Input Return Loss vs. Temperature [1]
0
22 RETURN LOSS (dB) -5
+25C +85C - 40C
GAIN (dB)
20
-10
18
+25C +85C - 40C
-15
16
14 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7
-20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7
Output Return Loss vs. Temperature [1]
0
Reverse Isolation vs. Temperature [1]
0 -5 REVERSE ISOLATION (dB)
RETURN LOSS (dB)
-5
+25C +85C - 40C
-10 -15 -20 -25 -30 -35
+25C +85C - 40C
-10
-15
-20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7
-40 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7
[1] Vdd = 5V [2] Vdd = 3V
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
8
LOW NOISE AMPLIFIERS - SMT
Noise Figure vs. Temperature [1]
1
P1dB vs. Temperature
24 22
0.8 NOISE FIGURE (dB)
+85C
20 0.6
+25 C
Vdd=5V
P1dB (dBm)
18 16
Vdd=3V
0.4
-40C
14
Vdd=5V Vdd=3V
0.2
12 10 0.2
+25 C +85 C - 40 C
0 0.2
0.3
0.4
0.5
0.6
0.7
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat vs. Temperature
24 22
Output IP3 vs. Temperature
45
Vdd=5V
40 20 Psat (dBm) 18 16 14 12 10 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7
Vdd=3V Vdd=5V
IP3 (dBm)
+25 C +85 C - 40 C
35
30
25
Vdd=3V
+25 C +85 C - 40 C
20 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz)
Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz
38 36 34 IP3 (dBm) 32 30 28 26 24 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 144 126 108
Output IP3 and Supply Current vs. Supply Voltage @ 500 MHz
43 40 37 IP3 (dBm) 34 31 28 25 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 140 120 100 80 60 40 20 0 5.5 Idd (mA)
90 Idd (mA) 72 54 36 18 0 5.5
VOLTAGE SUPPLY (V)
VOLTAGE SUPPLY (V)
[1] Measurement reference plane shown on evaluation PCB drawing.
8 - 364
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
Power Compression @ 400 MHz [1]
45 Pout (dBm), GAIN (dB), PAE (%)
Pout Gain PAE
Power Compression @ 400 MHz [2]
45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0
Pout Gain PAE
8
LOW NOISE AMPLIFIERS - SMT
NOISE FIGURE (dB)
40 35 30 25 20 15 10 5 0 -18 -16 -14 -12
-10
-8
-6
-4
-2
0
2
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT POWER (dBm)
INPUT POWER (dBm)
Power Compression @ 500 MHz [1]
45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm)
Pout Gain PAE
Power Compression @ 500 MHz [2]
50 Pout (dBm), GAIN (dB), PAE (%) 45 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm)
Pout Gain PAE
Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz
24
Gain P1dB
Gain, Power & Noise Figure vs. Supply Voltage @ 500 MHz
1 24
Gain P1dB
1
GAIN (dB) & P1dB (dBm)
20
0.6
GAIN (dB) & P1dB (dBm)
22
0.8 NOISE FIGURE (dB)
22
0.8
20
0.6
18
0.4
18
0.4
16
Noise Figure
0.2
16
Noise Figure
0.2
14 2.7
3.1
3.5
3.9
4.3
4.7
5.1
0 5.5
14 2.7
3.1
3.5
3.9
4.3
4.7
5.1
0 5.5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
[1] Vdd = 5V [2] Vdd = 3V
F or price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
8
LOW NOISE AMPLIFIERS - SMT
Output IP3 vs. Rbias @ 400 MHz
40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500
Vdd= 3V Vdd= 5V
Output IP3 vs. Rbias @ 500 MHz
40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500
Vdd= 3V Vdd= 5V
1000 Rbias (Ohms)
10000
1000 Rbias (Ohms)
10000
Cross Channel Isolation [1]
0
Magnitude Balance [1]
1 AMPLITUDE BALANCE (dB) 0.7
-10 ISOLATION (dB)
RFIN1 TO RFOUT2 RFIN2 TO RFOUT1
0.5
-20
0
-30
-0.5
-40 0.2
0.3
0.4
0.5
0.6
-1 0.2
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
FREQUENCY (GHz)
Phase Balance [1]
2 PHASE BALANCE (degrees)
Absolute Bias Register for Idd Range & Recommended Bias Resistor
Rbias Ω Vdd (V) Min Max Open circuit Recommended 10k 820 34 65 80 90 97 Idd (mA)
1
3V
4.7k
0
5V
-1
0
Open circuit
2k 3.92k 10k
With Vdd = 3V Rbias
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