HMC816LP4E_10

HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Features low Noise figure: 0.5 dB High Gain: 22 dB High output ip3: +37 dBm single supply: +3V to +5V 50 ohm matched input/output 24 lead 4x4mm QfN package: 16 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC816lp4e is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • public safety radio • multi-Channel Applications Functional Diagram General Description The HmC816lp4e is a GaAs pHemT Dual Channel low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 230 and 660 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output ip3 from a single supply of +5V. input and output return losses are excellent with minimal external matching and bias decoupling components. The HmC816lp4e shares the same package and pinout with the HmC817lp4e & HmC818lp4e lNAs. The HmC817lp4e can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the lNA for each application. Electrical Specifications, TA = +25° C, parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) 24 10 10 17 Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2 Vdd = +3V min. Typ. 230 - 450 21 0.001 0.5 13 12 14 15 26 34 44 24 13 14 0.9 14 max. min. Typ. 450 - 660 17 0.002 0.5 17 10 16 16.5 28 34 44 68 15 16 0.9 19 max. min. Typ. 230 - 450 22 0.005 0.5 15 13 19 20 34 97 126 68 18 18 0.9 15 Vdd = +5V max. min. Typ. 450 - 660 19 0.007 0.5 16 10 21 21 37 97 126 0.9 max. Units mHz dB dB/ °C dB dB dB dBm dBm dBm mA * rbias sets current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Gain vs. Temperature [1] 24 Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) S11 S22 Vdd= 5V Vdd= 3V S21 7 Amplifiers - low Noise - smT 7-2 22 GAIN (dB) 20 18 +25C +85C - 40C 16 14 1.2 1.4 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Gain vs. Temperature [2] 24 Input Return Loss vs. Temperature [1] 0 22 RETURN LOSS (dB) -5 +25C +85C - 40C GAIN (dB) 20 -10 18 +25C +85C - 40C 16 -15 14 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Output Return Loss vs. Temperature [1] 0 Reverse Isolation vs. Temperature [1] 0 -5 REVERSE ISOLATION (dB) RETURN LOSS (dB) -5 +25C +85C - 40C -10 -15 -20 -25 -30 -35 +25C +85C - 40C -10 -15 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 -40 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz P1dB vs. Temperature 24 22 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] 1 0.8 NOISE FIGURE (dB) +85C 20 0.6 +25 C Vdd=5V P1dB (dBm) 18 16 14 0.4 -40C Vdd=5V Vdd=3V Vdd=3V +25 C +85 C - 40 C 0.2 12 10 0.2 0 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) Psat vs. Temperature 24 22 20 Psat (dBm) 18 16 14 12 10 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Vdd=3V Vdd=5V Output IP3 vs. Temperature 45 Vdd=5V 40 IP3 (dBm) +25 C +85 C - 40 C 35 30 25 Vdd=3V +25 C +85 C - 40 C 20 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz 38 36 34 IP3 (dBm) 32 30 28 26 24 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 144 126 108 Output IP3 and Supply Current vs. Supply Voltage @ 500 MHz 43 40 37 IP3 (dBm) 34 31 28 25 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 140 120 100 80 60 40 20 0 5.5 Idd (mA) 90 Idd (mA) 72 54 36 18 0 5.5 [1] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Power Compression @ 400 MHz [2] 45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pout Gain PAE Power Compression @ 400 MHz [1] 45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) Pout Gain PAE 7 Amplifiers - low Noise - smT NOISE FIGURE (dB) INPUT POWER (dBm) Power Compression @ 500 MHz [1] 45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 500 MHz [2] 50 Pout (dBm), GAIN (dB), PAE (%) 45 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) Pout Gain PAE Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz 24 Gain P1dB Gain, Power & Noise Figure vs. Supply Voltage @ 500 MHz 1 24 Gain P1dB 1 GAIN (dB) & P1dB (dBm) 20 0.6 GAIN (dB) & P1dB (dBm) 22 0.8 NOISE FIGURE (dB) 22 0.8 20 0.6 18 0.4 18 0.4 16 Noise Figure 0.2 16 Noise Figure 0.2 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Output IP3 vs. Rbias @ 500 MHz 40 38 36 34 IP3 (dBm) 32 30 28 7 Amplifiers - low Noise - smT Output IP3 vs. Rbias @ 400 MHz 40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500 1000 Rbias (Ohms) Vdd= 3V Vdd= 5V 26 24 10000 22 500 1000 Vdd= 3V Vdd= 5V 10000 Rbias (Ohms) Cross Channel Isolation [1] 0 Magnitude Balance [1] 1 AMPLITUDE BALANCE (dB) 0.7 -10 ISOLATION (dB) RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 0.5 -20 0 -30 -0.5 -40 0.2 0.3 0.4 0.5 0.6 -1 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) FREQUENCY (GHz) Phase Balance [1] 2 PHASE BALANCE (degrees) Absolute Bias Register for Idd Range & Recommended Bias Resistor Vdd (V) rbias Ω min 4.7k max open circuit recommended 10k 820 idd (mA) 34 65 80 90 97 1 3V 0 5V -1 0 open circuit 2k 3.92k 10k -2 0.2 With Vdd = 3V Rbias