HMC817LP4E

HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Features Noise figure: 0.5 dB Gain: 16 dB output ip3: +37 dBm single supply: +3V to +5V 50 ohm matched input/output 24 lead 4x4mm QfN package: 16 mm2 7 Amplifiers - low Noise - smT Typical Applications The HmC817lp4e is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • multi-Channel Applications • Access points Functional Diagram General Description The HmC817lp4e is a GaAs pHemT Dual Channel low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 550 and 1200 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output ip3 from a single supply of +5V. input and output return losses are excellent with minimal external matching and bias decoupling components. The HmC817lp4e shares the same package and pinout with the HmC816lp4e and HmC818lp4e lNAs. The HmC817lp4e can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the lNA for each application. Electrical Specifications, TA = +25° C, parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) 24 14 13 Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2 Vdd = +3 V min. Typ. 698 - 960 16 0.003 0.5 28 12 16 17 31 34 44 24 12.5 0.8 11 max. min. Typ. 550 - 1200 15 0.003 0.5 22 14 16.5 17.5 30 34 44 65 18.5 1.1 13.5 max. min. Typ. 698 - 960 16 0.005 0.55 22 12 20.5 21 37 95 124 65 16.5 0.85 11.5 Vdd = +5 V max. min. Typ. 550 - 1200 16 0.005 0.6 17 15 21 21.5 37 95 124 1.1 max. Units mHz dB dB/ °C dB dB dB dBm dBm dBm mA * rbias resistor sets current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Gain vs. Temperature [1] 22 20 Broadband Gain & Return Loss 25 S21 7 +25C +85C - 40C 15 RESPONSE (dB) 5 -5 -15 -25 S11 Vdd= 5V Vdd= 3V 18 GAIN (dB) 16 14 12 10 S22 -35 0.2 0.4 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 1.8 2 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Gain vs. Temperature [2] 22 20 18 GAIN (dB) 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) +25C +85C - 40C +25 C +85 C - 40 C -10 -15 -20 -25 -30 -35 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Output Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C - 40 C Reverse Isolation vs. Temperature [1] 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C - 40 C [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-2 Amplifiers - low Noise - smT HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz P1dB vs. Temperature 24 22 20 P1dB (dBm) Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs. Temperature [1] 1.2 1 NOISE FIGURE (dB) 0.8 0.6 0.4 0.2 0 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 -40C Vdd= 5V Vdd= 3V +85C 18 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Vdd=3V +25 C +25 C +85 C - 40 C Psat vs. Temperature 24 22 20 Psat (dBm) 18 16 14 12 10 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 +25 C +85 C -40 C Vdd=5V Output IP3 vs. Temperature 48 44 40 IP3 (dBm) Vdd=5V +25 C +85 C - 40 C Vdd=3V 36 32 28 24 20 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Vdd=3V Output IP3 and Supply Current vs. Supply Voltage @ 700 MHz 40 38 36 IP3 (dBm) 34 32 30 28 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 210 180 150 Output IP3 and Supply Current vs. Supply Voltage @ 900 MHz 40 38 36 IP3 (dBm) 34 32 30 28 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 210 180 150 120 90 60 30 0 5.5 Idd (mA) 120 90 60 30 0 5.5 [1] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Idd (mA) HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Power Compression @ 900 MHz [1] 60 50 40 30 20 10 0 -10 Pout Gain PAE Power Compression @ 700 MHz [1] 50 Pout (dBm), GAIN (dB), PAE (%) 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) Pout Gain PAE 7 Amplifiers - low Noise - smT NOISE FIGURE (dB) Pout (dBm), GAIN (dB), PAE (%) -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) Power Compression @ 700 MHz [2] 50 Pout (dBm), GAIN (dB), PAE (%) 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 900 MHz [2] 60 Pout (dBm), GAIN (dB), PAE (%) 50 40 30 20 10 0 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) Pout Gain PAE Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz 24 Gain P1dB Gain, Power & Noise Figure vs. Supply Voltage @ 900 MHz 1 24 Gain P1dB 1 GAIN (dB) & P1dB (dBm) 20 0.6 GAIN (dB) & P1dB (dBm) 22 0.8 NOISE FIGURE (dB) 22 0.8 20 0.6 18 0.4 18 0.4 Noise Figure 16 Noise Figure 0.2 16 0.2 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Magnitude Balance [1] 1 AMPLITUDE BALANCE (dB) 7 Amplifiers - low Noise - smT Cross Channel Isolation [1] 0 -10 ISOLATION (dB) RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 0.5 -20 0 -30 -0.5 -40 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 -1 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) Phase Balance [1] 2 PHASE BALANCE (degrees) Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature +6V +10 dBm 150 °C 1.08 w 60 °C/w -65 to +150 °C -40 to +85 °C 1 0 Continuous pdiss (T= 85 °C) (derate 16.67 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature -1 -2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Typical Supply Current vs. Vdd (Rbias = 10kΩ) Vdd (V) 2.7 3.0 3.3 4.5 5.0 5.5 idd (mA) 24 34 44 82 95 105 Absolute Bias Register for Idd Range & Recommended Bias Resistor Vdd (V) 3V rbias Ω min 10k max open circuit open circuit recommended 10k 820 5V 0 2k 10k idd (mA) 34 58 78 95 Note: Amplifier will operate over full voltage ranges shown above. With Vdd = 3V Rbias