HMC818LP4E

HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Features low Noise figure: 0.85 dB High Gain: 20.5 dB High oip3: +35 dBm single supply: +3V to +5V 50 ohm matched input/output 24 lead 4x4mm QfN package: 16mm² 7 Amplifiers - low Noise - smT Typical Applications The HmC818lp4e is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • public safety radios Functional Diagram General Description The HmC818lp4e is a GaAs pHemT Dual Channel low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.85 dB noise figure, 20.5 dB gain and +35 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC818lp4e can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the lNA for a specific application. TA = +25° C, Rbias = 10K, Vdd= Vdd1, 2, 3, 4, Idd = Idd1 + Idd2, Idd3 + Idd4 parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) 30 15 Vdd = 3V min. Typ. 1700 - 2000 18 0.010 0.95 18 16 14 15 24.5 42 55 30 1.2 14 max. min. Typ. 2000 - 2200 16.5 0.008 0.95 17 15 15 16 25 42 55 78 1.2 17 max. min. Typ. 1700 - 2000 20.5 0.015 0.85 21 15 19 20 33 112 146 78 1.1 15.5 Vdd = 5V max. min. Typ. max. Units mHz dB dB/°C 1.1 dB dB dB dBm dBm dBm 146 mA Electrical Specifications, 2000 - 2200 17.5 0.012 0.85 18 13 21 21.5 35 112 * rbias resistor sets current, see application circuit herein 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Gain vs. Temperature [1] 26 24 Broadband Gain & Return Loss [1] [2] 25 S21 7 Amplifiers - low Noise - smT 7-2 15 RESPONSE (dB) 5 -5 -15 -25 S11 S22 Vdd=5V Vdd=3V 22 GAIN (dB) 20 18 16 14 12 +25C +85C - 40C -35 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 3 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Gain vs. Temperature [2] 26 24 22 GAIN (dB) 20 18 16 14 12 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25C +85C - 40C Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C - 40 C Output Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C - 40 C Reverse Isolation vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C - 40 C [1] Vdd = 5V, rbias = 10K [2] Vdd = 3V, rbias = 10K F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Output P1dB vs. Temperature 24 22 20 P1dB (dBm) 18 16 14 Vdd=5V 7 Amplifiers - low Noise - smT Noise Figure vs Temperature [1] 1.6 1.4 NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 0.2 0 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 -40C Vdd=5V Vdd=3V +25 C +85C Vdd=3V +25 C +85 C - 40 C 12 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Psat vs. Temperature 24 22 20 Psat (dBm) 18 Vdd=3V Output IP3 vs. Temperature 38 36 Vdd=5V 34 32 IP3 (dBm) 30 28 26 +25 C +85 C - 40 C Vdd=3V Vdd=5V +25 C +85 C - 40 C 16 14 12 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 24 22 20 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Output IP3 and Idd vs. Supply Voltage @ 1700 MHz 36 34 32 IP3 (dBm) 30 28 26 24 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 210 180 150 120 90 60 30 0 5.5 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz 38 36 34 IP3 (dBm) 32 30 28 26 24 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 VOLTAGE SUPPLY (V) 240 210 180 150 Idd (mA) 120 90 60 30 0 5.5 [1] measurement reference plane shown on evaluation pCB drawing. 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Idd (mA) HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Power Compression @ 1700 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 1700 MHz [1] 30 Pout (dBm), GAIN (dB), PAE (%) 7 Amplifiers - low Noise - smT NOISE FIGURE (dB) 20 20 10 10 0 Pout Gain PAE 0 Pout Gain PAE -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) -10 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) Power Compression @ 2100 MHz [1] 30 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2100 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 20 20 10 10 0 Pout Gain PAE 0 Pout Gain PAE -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz 26 24 GAIN (dB) & P1dB (dBm) 22 20 18 16 14 12 10 2.7 GAIN P1dB Noise Figure Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz 1.6 1.4 1.2 NOISE FIGURE (dB) 1 0.8 0.6 0.4 0.2 0 5.5 GAIN (dB) & P1dB (dBm) 26 24 22 20 18 16 14 12 10 2.7 GAIN P1dB Noise Figure 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 5.5 3.1 3.5 3.9 4.3 4.7 5.1 3.1 3.5 3.9 4.3 4.7 5.1 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Gain, Noise Figure & Rbias @ 1700 MHz [1] 24 23 22 GAIN (dB) 21 20 19 18 17 16 2 1.8 1.6 NOISE FIGURE (dB) 1.4 1.2 1 0.8 0.6 0.4 1000 Rbias(Ohms) 10000 7 Amplifiers - low Noise - smT Output IP3 vs. Rbias @ 1700 MHz [1] 36 34 32 IP3 (dBm) 30 28 26 24 22 100 1000 Rbias (Ohms) 10000 100 Output IP3 vs. Rbias @ 2100 MHz [1] 38 36 34 IP3 (dBm) 32 30 28 26 24 100 1000 Rbias (Ohms) 140 120 100 80 60 40 20 0 10000 Gain, Noise Figure & Rbias @ 2100 MHz [1] 21 20 19 GAIN (dB) 18 17 16 15 14 13 100 1000 Rbias(Ohms) 0.6 10000 0.8 1 1.2 NOISE FIGURE (dB) 1.4 Cross Channel Isolation [1] 0 Magnitude Balance [1] 1 AMPLITUDE BALANCE (dB) 2.3 -10 ISOLATION (dB) RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 0.5 -20 0 -30 -0.5 -40 1.6 1.7 1.8 1.9 2 2.1 2.2 -1 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) [1] Vdd = 5V 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Phase Balance [1] 2 PHASE BALANCE (degrees) 7 Amplifiers - low Noise - smT idd (mA) 31 42 52 95 112 129 1 0 -1 -2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd (V) 3V rbias min (ohms) 10K [2] max (ohms) open Circuit r1 (ohms) 10K 120 5V 0 open Circuit 470 10K idd (mA) 42 64 82 112 [2] with Vdd= 3V and rbias < 10K ohm may result in the part becoming conditionally unstable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfiN) (Vdd = +5 Vdc) Channel Temperature Continuous pdiss (T= 85 °C) (derate 19.35 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature 6V +10 dBm 150 °C 1.26 w 51.67 °C/w -65 to +150 °C -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 10K) Vdd (V) 2.7 3.0 3.3 4.5 5.0 5.5 Note: Amplifier will operate over full voltage ranges shown above. eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs [1] Vdd = 5V F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 Amplifiers - low Noise - smT Outline Drawing Package Information part Number HmC818lp4e package Body material roHs-compliant low stress injection molded plastic lead finish 100% matte sn msl rating msl1 [2] package marking [1] 818 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 235 °C 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions pin Number 1, 6 2, 5, 7, 12, 14, 17, 19, 24 3, 4, 9, 10, 21, 22 function rfiN1, 2 Description This pin is DC coupled an off chip DC blocking capacitor is required. package bottom must be connected to rf/DC ground. No connection required. These pins may be connected to rf/ DC ground without affecting performance. interface schematic 7 Amplifiers - low Noise - smT 7-8 GND N/C 23, 20, 8, 11 Vdd1, 2, 3, 4 power supply voltage for each amplifier. Choke inductor and bypass capacitors are required. see application circuit. 18, 13 rfoUT1, 2 This pin is matched to 50 ohms. 16, 15 res1, 2 These pins are used to set the DC current idd2 and idd4 in each amplifier via an external biasing resistor. see application circuit. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 7 Amplifiers - low Noise - smT 7-9 Application Circuit F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC818LP4E v01.0809 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Evaluation PCB 7 Amplifiers - low Noise - smT List of Materials for Evaluation PCB 122727 item J1 - J4 J5, J6 C1, C2 C3, C5, C7, C9 C4, C6, C8, C10 C11, C12 C13, C14 l5, l7 l6, l8 r1, r2 (rbias 1, 2) U1 pCB [2] Description pCB mount smA rf Connector 2mm Vertical molex 8pos Connector 220 pf Capacitor, 0402 pkg.. 1000 pf Capacitor, 0603 pkg. 0.47 µf Capacitor, 0603 pkg. 10 kpf Capacitor, 0402 pkg. 0 ohm resistor, 0402 pkg. 15 nH inductor, 0603 pkg. 6.8 nH inductor, 0603 pkg. 10k ohm resistor, 0402 pkg. HmC818lp4(e) Amplifier 122725 evaluation pCB [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25fr F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 - 10