HMC849LP4CE
v01.1009
HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz
Typical Applications
The HMC849LP4CE is ideal for: • Cellular/4G Infrastructure • WiMAX, WiBro & Fixed Wireless • Automotive Telematics • Mobile Radio • Test Equipment
Features
High Isolation: up to 60 dB Single Positive Control: 0/+3V to +5V High Input IP3: +52 dBm Non-Reflective Design “All Off” State 24 Lead 4x4 mm QFN Package: 16 mm2
Functional Diagram
General Description
The HMC849LP4CE is a high isolation non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 5 - 6 GHz WiMAX band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state.
14
SWITCHES - SPDT - SMT
Electrical Specifi cations, TA = +25 °C, Vctl = 0/Vdd, Vdd = +3V to +5V, 50 Ohm System
Parameter Insertion Loss Frequency DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 4.0 GHz 4.0 - 6.0 GHz DC - 6.0 GHz +3V +5V 0.35 - 4.0 GHz DC - 6.0 GHz 29 34 53 48 40 Min. Typ. 0.8 1.0 1.7 60 55 52 17 13 15 30 35 52 Max. 1.3 1.5 2.5 Units dB dB dB dB dB dB dB dBm dBm dBm
Isolation (RFC to RF1/RF2)
Return Loss (On State) Return Loss (Off State) Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Speed tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF)
DC - 4.0 GHz
80 150
ns ns
14 - 212
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC849LP4CE
v01.1009
HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz
Insertion Loss
0
Return Loss [1]
0 -5
INSERTION LOSS (dB)
-1
RETURN LOSS (dB)
-10
-2
RFC RF1, RF2 ON RF1, RF2 OFF
-15
-3
+25C +85C -40C
-20
-4
-25
-5 0 1 2 3 4 5 6 7
-30 0 1 2 3 4 5 6 7
FREQUENCY (GHz)
FREQUENCY (GHz)
Isolation Between Ports RFC and RF1 / RF2
0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
RF1 RF2 ALL OFF
Isolation Between Ports RF1 and RF2
0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
RFC-RF1 ON RFC-RF2 ON
14
SWITCHES - SPDT - SMT
14 - 213
0.1 and 1 dB Input Compression Point, Vdd = 5V, Linear
40
0.1 and 1 dB Input Compression Point, Vdd = 3V, Linear
INPUT COMPRESSION (dBm)
30
INPUT COMPRESSION (dBm)
35
30
25
25
0.1 dB Compression Point 1dB Compression Point
20
0.1 dB Compression Point 1 dB Compression Point
20
15 0 1 2 3 4 5 6
15 0 1 2 3 4 5 6
FREQUENCY (GHz)
FREQUENCY (GHz)
[1] RFC is reflective in “all off” state.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC849LP4CE
v01.1009
HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz
0.1 and 1 dB Input Compression Point, Vdd = 5V
40
0.1 and 1 dB Input Compression Point, Vdd = 3V
35
INPUT COMPRESSION (dBm)
35
0.1 dB Compression Point 1 dB Compression Point
INPUT COMPRESSION (dBm)
30
0.1 dB Compression Point 1 dB Compression Point
30
25
25
20
20
15 0.01
0.1
1
15 0.01
0.1
1
FREQUENCY (GHz)
FREQUENCY (GHz)
14
SWITCHES - SPDT - SMT
Input Third Order Intercept Point, Vdd = 5V, Linear
60
Input Third Order Intercept Point, Vdd = 3V, Linear
60
55
55
IP3 (dBm)
50
IP3 (dBm)
+25C +85C -40C
50
45
45
+25C +85C -40C
40 0 1 2 3 4 5 6
40 0 1 2 3 4 5 6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Third Order Intercept Point, Vdd = 5V
60
Input Third Order Intercept Point, Vdd = 3V
60
55
55
IP3 (dBm)
50
IP3 (dBm)
+25C +85C -40C
50
45
45
+25C +85C -40C
40 0.01
0.1
1
40 0.01
0.1
1
FREQUENCY (GHz)
FREQUENCY (GHz)
14 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC849LP4CE
v01.1009
HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz
Absolute Maximum Ratings
Bias Voltage (Vdd) Control Voltage (Vctl, EN) RF Input Power * Through Path 3V/5V Termination Path 3V/5V Channel Temperature Continuous Pdiss (T = 85 °C) (derate 17.6 mW/°C for through path, and 6.8 mW/°C for termination path above 85 °C) Through Path Termination Path Thermal Resistance (channel to package bottom) Through Path Termination Path Storage Temperature Operating Temperature ESD Sensitivity (HBM) 56.8 °C/W 147.3 °C/W -65 to +150 °C 30.60 / 33 dBm 26.4 dBm 150 °C 7V -1V to Vdd +1V
Bias Voltage & Current
Vdd (V) 3 5 Idd (Typ.) (mA) 0.80 0.85
Digital Control Voltages
State 1.144 W 0.441 W Low High Bias Condition 0 to +0.8 Vdc @
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