HMC849LP4CE

HMC849LP4CE v01.1009 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications The HMC849LP4CE is ideal for: • Cellular/4G Infrastructure • WiMAX, WiBro & Fixed Wireless • Automotive Telematics • Mobile Radio • Test Equipment Features High Isolation: up to 60 dB Single Positive Control: 0/+3V to +5V High Input IP3: +52 dBm Non-Reflective Design “All Off” State 24 Lead 4x4 mm QFN Package: 16 mm2 Functional Diagram General Description The HMC849LP4CE is a high isolation non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 5 - 6 GHz WiMAX band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state. 14 SWITCHES - SPDT - SMT Electrical Specifi cations, TA = +25 °C, Vctl = 0/Vdd, Vdd = +3V to +5V, 50 Ohm System Parameter Insertion Loss Frequency DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 4.0 GHz 4.0 - 6.0 GHz DC - 6.0 GHz +3V +5V 0.35 - 4.0 GHz DC - 6.0 GHz 29 34 53 48 40 Min. Typ. 0.8 1.0 1.7 60 55 52 17 13 15 30 35 52 Max. 1.3 1.5 2.5 Units dB dB dB dB dB dB dB dBm dBm dBm Isolation (RFC to RF1/RF2) Return Loss (On State) Return Loss (Off State) Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Speed tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 4.0 GHz 80 150 ns ns 14 - 212 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC849LP4CE v01.1009 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Insertion Loss 0 Return Loss [1] 0 -5 INSERTION LOSS (dB) -1 RETURN LOSS (dB) -10 -2 RFC RF1, RF2 ON RF1, RF2 OFF -15 -3 +25C +85C -40C -20 -4 -25 -5 0 1 2 3 4 5 6 7 -30 0 1 2 3 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz) Isolation Between Ports RFC and RF1 / RF2 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 1 2 3 4 5 6 7 FREQUENCY (GHz) RF1 RF2 ALL OFF Isolation Between Ports RF1 and RF2 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 1 2 3 4 5 6 7 FREQUENCY (GHz) RFC-RF1 ON RFC-RF2 ON 14 SWITCHES - SPDT - SMT 14 - 213 0.1 and 1 dB Input Compression Point, Vdd = 5V, Linear 40 0.1 and 1 dB Input Compression Point, Vdd = 3V, Linear INPUT COMPRESSION (dBm) 30 INPUT COMPRESSION (dBm) 35 30 25 25 0.1 dB Compression Point 1dB Compression Point 20 0.1 dB Compression Point 1 dB Compression Point 20 15 0 1 2 3 4 5 6 15 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) [1] RFC is reflective in “all off” state. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC849LP4CE v01.1009 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz 0.1 and 1 dB Input Compression Point, Vdd = 5V 40 0.1 and 1 dB Input Compression Point, Vdd = 3V 35 INPUT COMPRESSION (dBm) 35 0.1 dB Compression Point 1 dB Compression Point INPUT COMPRESSION (dBm) 30 0.1 dB Compression Point 1 dB Compression Point 30 25 25 20 20 15 0.01 0.1 1 15 0.01 0.1 1 FREQUENCY (GHz) FREQUENCY (GHz) 14 SWITCHES - SPDT - SMT Input Third Order Intercept Point, Vdd = 5V, Linear 60 Input Third Order Intercept Point, Vdd = 3V, Linear 60 55 55 IP3 (dBm) 50 IP3 (dBm) +25C +85C -40C 50 45 45 +25C +85C -40C 40 0 1 2 3 4 5 6 40 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Input Third Order Intercept Point, Vdd = 5V 60 Input Third Order Intercept Point, Vdd = 3V 60 55 55 IP3 (dBm) 50 IP3 (dBm) +25C +85C -40C 50 45 45 +25C +85C -40C 40 0.01 0.1 1 40 0.01 0.1 1 FREQUENCY (GHz) FREQUENCY (GHz) 14 - 214 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC849LP4CE v01.1009 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Absolute Maximum Ratings Bias Voltage (Vdd) Control Voltage (Vctl, EN) RF Input Power * Through Path 3V/5V Termination Path 3V/5V Channel Temperature Continuous Pdiss (T = 85 °C) (derate 17.6 mW/°C for through path, and 6.8 mW/°C for termination path above 85 °C) Through Path Termination Path Thermal Resistance (channel to package bottom) Through Path Termination Path Storage Temperature Operating Temperature ESD Sensitivity (HBM) 56.8 °C/W 147.3 °C/W -65 to +150 °C 30.60 / 33 dBm 26.4 dBm 150 °C 7V -1V to Vdd +1V Bias Voltage & Current Vdd (V) 3 5 Idd (Typ.) (mA) 0.80 0.85 Digital Control Voltages State 1.144 W 0.441 W Low High Bias Condition 0 to +0.8 Vdc @