HMC863LP4E

HMC863LP4E v01.1110 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Features saturated output power: up to +27.5 dBm @ 15% pAe High output ip3: +33 dBm High Gain: 21.5 dB DC supply: +6V @ 350mA no external matching required 24 lead 4x4 mm smT package: 16 mm² Typical Applications The HmC863lp4e is ideal for: • point-to-point radios • point-to-multi-point radios • VsAT 9 Amplifiers - lineAr & power - smT • military & space Functional Diagram General Description The HmC863lp4e is a three stage GaAs pHemT mmiC ½ watt power Amplifier which operates between 22 and 26.5 GHz. The HmC863lp4e provides 21.5 dB of gain, +27.5 dBm of saturated output power and 15% pAe from a +6V supply. High output ip3 makes the HmC863lp4e ideal for point-to-point and point-to-multi-point radio systems as well as VsAT applications. The rf i/os are DC blocked and matched to 50 ohms for ease of integration into higher level assemblies. The HmC863lp4e can also be operated from a 5V supply with only a slight decrease in output power & ip3. Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 350mA [1] parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept Total supply Current (idd) [1] Adjust Vgg between -2 to 0V to achieve idd = 350mA typical. [2] measurement taken at +6V @ 350mA, pout / Tone = +14 dBm (ip3)[2] 22 19 min. Typ. 22 - 26.5 21.5 0.032 11 15 24.5 27 33 350 380 max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 9-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863LP4E v01.1110 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Gain vs. Temperature 28 26 24 Broadband Gain & Return Loss vs. Frequency 30 20 RESPONSE (dB) 10 0 -10 -20 -30 -40 20 21 22 23 24 25 GAIN (dB) S21 S11 S22 22 20 18 16 14 12 +25C +85C -40C 9 26 27 26 27 28 29 22 23 24 25 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -10 -15 -20 -25 22 23 24 25 26 27 -40 22 23 24 25 26 27 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 28 P1dB vs. Supply Voltage 28 26 26 P1dB (dBm) 24 P1dB (dBm) 24 22 +25C +85C -40C 22 6.0V 5.5V 5.0V 20 22 23 24 25 26 27 20 22 23 24 25 26 27 FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-2 Amplifiers - lineAr & power - smT HMC863LP4E v01.1110 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Psat vs. Supply Voltage 30 Psat vs. Temperature 33 +25C +85C -40C 31 28 Psat (dBm) 29 Psat (dBm) 9 Amplifiers - lineAr & power - smT 26 27 25 24 6.0V 5.5V 5.0V 23 22 23 24 25 26 27 22 22 23 24 25 26 27 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 28 Psat vs. Supply Current (Idd) 30 26 P1dB (dBm) Psat (dBm) 300mA 350mA 400mA 28 24 26 22 24 300mA 350mA 400mA 20 22 23 24 25 26 27 FREQUENCY (GHz) 22 22 23 24 25 26 27 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +14 dBm 38 Output IP3 vs. Supply Current, Pout/Tone = +14 dBm 38 36 36 IP3 (dBm) IP3 (dBm) 34 34 32 +25C +85C -40C 32 300mA 350mA 400mA 30 30 28 22 23 24 25 26 27 28 22 23 24 25 26 27 FREQUENCY (GHz) FREQUENCY (GHz) 9-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863LP4E v01.1110 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Output IM3 @ Vdd = +5V 60 50 Output IP3 vs. Supply Voltage, Pout/Tone = +14 dBm 38 6.0V 5.5V 5.0V 36 40 IP3 (dBm) IM3 (dBc) 34 30 32 20 30 10 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz 9 16 17 18 19 20 28 22 23 24 25 26 27 0 5 6 7 8 9 10 11 12 13 14 15 FREQUENCY (GHz) Pout/TONE (dBm) Output IM3 @ Vdd = +5.5V 60 50 Output IM3 @ Vdd = +6V 60 50 40 40 30 30 20 10 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz 20 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz 10 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pout/TONE (dBm) Pout/TONE (dBm) Power Compression @ 25 GHz 35 Reverse Isolation vs. Temperature 0 -10 Pout (dBm), GAIN (dB), PAE (%) REVERSE ISOLATION (dB) 30 25 20 15 10 5 0 -15 -12 -9 Pout Gain PAE -20 -30 -40 -50 -60 -70 -80 -90 +25C +85C -40C -6 -3 0 3 6 9 22 23 24 25 26 27 INPUT POWER (dBm) FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-4 Amplifiers - lineAr & power - smT IM3 (dBc) IM3 (dBc) HMC863LP4E v01.1110 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Gain & Power vs. Supply Voltage @ 25 GHz 32 Gain & Power vs. Supply Current @ 25 GHz 32 Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 30 28 26 24 22 20 18 300 320 340 Gain P1dB Psat 30 28 26 24 22 20 18 Gain P1dB Psat 9 Amplifiers - lineAr & power - smT 360 380 400 5 5.2 5.4 5.6 5.8 6 Idd (mA) Vdd (V) Power Dissipation 4 POWER DISSIPATION (W) 3.5 3 23 GHz 24 GHz 25 GHz 26 GHz 27 GHz 2.5 2 1.5 1 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 37 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature esD sensitivity (HBm) 6.3V +26 dBm 150 °C 2.52 w 26.9 C/w -65 to +150 °C -55 to +85 °C Class 0, 150V Typical Supply Current vs. Vdd Vdd (V) +5.0 +5.5 +6.0 idd (mA) 350 350 350 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 350mA at +5.5V eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions 9-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863LP4E v01.1110 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Outline Drawing 9 noTes: 1. pACKAGe BoDY mATeriAl: AlUminA 2. leAD AnD GroUnD pADDle plATinG: 30-80 miCroinCHes GolD oVer 50 miCroinCHes minimUm niCKel. 3. Dimensions Are in inCHes [millimeTers]. 4. leAD spACinG TolerAnCe is non-CUmUlATiVe 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm DATUm -C6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. Package Information part number HmC863lp4e package Body material 7. ClAssifieD As moisTUre sensiTiViTY leVel (msl) 1. lead finish 100% matte sn msl rating msl1 [2] package marking [1] H863 XXXX roHs-compliant low stress injection molded plastic [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °C Pin Descriptions pin number 1, 2, 4 - 7, 12 15, 17 - 19, 24 package Bottom 3 8 - 11 16 function GnD rfin n/C rfoUT Description Ground pins and package bottom must be connected to rf/DC ground. This pin is AC coupled and matched to 50 ohms. The pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/DC ground externally. This pin is AC coupled and matched to 50 ohms. interface schematic 20 Vd Drain bias for amplifier. external 100 pf, 0.1 µf and 4.7 µf bypass capacitors are required. 23 Vg Gate control for pA. Adjust Vg to achieve recommended bias current. external 100 pf, 0.1 µf and 4.7 µf bypass capacitors are required. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-6 Amplifiers - lineAr & power - smT HMC863LP4E v01.1110 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Evaluation PCB 9 Amplifiers - lineAr & power - smT List of Materials for Evaluation PCB 130560 [1] item J1 - J2 J3 - J4 C1, C2 C6 C10 U1 pCB [2] Description 2.9 mm Connectors DC pins 100 pf Capacitors, 0402 pkg. 10 kpf Capacitor, 0402 pkg 4.7 µf Capacitor, 0402 pkg. HmC863lp4e power Amplifier 125559 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon fr4 The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. 9-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863LP4E v01.1110 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz Application Circuit 9 Amplifiers - lineAr & power - smT F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9-8