HMC863_10

HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Features saturated output power: +28 dBm @ 18% pAe high output ip3: +39 dBm high Gain: 27 dB DC supply: +6V @ 375mA 50 ohm matched input/output Die size: 2.41 x 0.95 x 0.1 mm Typical Applications The hmC863 is ideal for: • point-to-point radios 3 Amplifiers - lineAr & power - Chip • point-to-multi-point radios • VsAT • military & space Functional Diagram General Description The hmC863 is a three stage GaAs phemT mmiC 1/2 watt power Amplifier which operates between 24 and 29.5 Ghz. The hmC863 provides 27 dB of gain, and +27 dBm of saturated output power at 18% pAe from a +6V supply. The rf i/os are DC blocked and matched to 50 ohms for ease of integration into multi-Chip-modules (mCms). All data is taken with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +6V, Idd = 375mA[1] parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept Total supply Current (idd) [1] Adjust Vgg between -2 to 0V to achieve idd= 375mA typical. [2] measurement taken at +6V @ 375mA, pout / Tone = +16 dBm (ip3)[2] 24 24 min. Typ. 24 - 27 27 0.0375 17 15 27 28 37 375 23 22 max. min. Typ. 27 - 29.5 25 0.05 11 11 26 27 38 375 max. Units Ghz dB dB/ °C dB dB dBm dBm dBm mA 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Gain vs. Temperature 34 32 30 Broadband Gain & Return Loss vs. Frequency 30 20 RESPONSE (dB) 10 0 GAIN (dB) S21 S11 S22 28 26 24 22 +25C +85C -55C 3 24 25 26 27 28 29 30 -20 20 18 21 22 23 24 25 26 27 28 29 30 -30 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C -5 Output Return Loss vs. Temperature 0 -5 -10 -10 -15 -15 -20 -20 +25C +85C -55C -25 -25 -30 24 25 26 27 28 29 30 -30 24 25 26 27 28 29 30 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 31 P1dB vs. Supply Voltage 31 29 29 P1dB (dBm) 27 P1dB (dBm) 27 25 +25C +85C -55C 25 6.0V 5.5V 5.0V 23 23 21 24 25 26 27 28 29 30 21 24 25 26 27 28 29 30 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip -10 RETURN LOSS (dB) RETURN LOSS (dB) HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Psat vs. Supply Voltage 31 Psat vs. Temperature 31 Psat (dBm) 27 Psat (dBm) +25C +85C -55C 3 Amplifiers - lineAr & power - Chip 29 29 27 25 25 6.0V 5.5V 5.0V 23 23 21 24 25 26 27 28 29 30 21 24 25 26 27 28 29 30 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 31 Psat vs. Supply Current (Idd) 31 29 29 P1dB (dBm) 27 Psat (dBm) 350mA 375mA 400mA 27 25 25 350mA 375mA 400mA 23 23 21 24 25 26 27 28 29 30 21 24 25 26 27 28 29 30 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +16 dBm 46 Output IP3 vs. Supply Current, Pout/Tone = +16 dBm 46 42 42 IP3 (dBm) 38 IP3 (dBm) +25C +85C -55C 38 34 34 350mA 375mA 400mA 30 24 25 26 27 28 29 30 30 24 25 26 27 28 29 30 FREQUENCY (GHz) FREQUENCY (GHz) 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Output IM3 @ Vdd = +5V 60 50 Output IP3 vs. Supply Voltage, Pout/Tone = +16 dBm 46 42 40 IP3 (dBm) 38 IM3 (dBc) 30 3 9 11 13 15 17 19 21 23 34 6.0V 5.5V 5.0V 10 30 23 24 25 26 27 28 29 30 0 FREQUENCY (GHz) Pout/TONE (dBm) Output IM3 @ Vdd = +5.5V 60 50 Output IM3 @ Vdd = +6V 60 50 40 40 30 20 24 GHz 26 GHz 28 GHz 29 GHz 30 20 24 GHz 26 GHz 28 GHz 29 GHz 10 10 0 9 11 13 15 17 19 21 23 0 9 11 13 15 17 19 21 23 Pout/TONE (dBm) Pout/TONE (dBm) Output Power, Gain & PAE @ 27 GHz 35 Reverse Isolation vs. Temperature 0 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 -16 -12 -8 -4 0 4 Pout Gain PAE REVERSE ISOLATION (dB) 30 -10 +25C +85C -55C -20 -30 -40 -50 -60 24 25 26 27 28 29 30 INPUT POWER (dBm) FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-4 Amplifiers - lineAr & power - Chip 20 24 GHz 26 GHz 28 GHz 29 GHz IM3 (dBc) IM3 (dBc) HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Gain & Power vs. Supply Voltage @ 27 GHz 30 Gain & Power vs. Supply Current @ 27 GHz 30 Gain (dB), P1dB (dBm), Psat (dBm) 3 Amplifiers - lineAr & power - Chip 29 Gain (dB) P1dB (dBm) Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 29 Gain (dB) P1dB (dBm) Psat (dBm) 28 28 27 27 26 26 25 350 360 370 380 390 400 25 5 5.2 5.4 5.6 5.8 6 Idd (mA) Vdd (V) Power Dissipation 3 POWER DISSIPATION (W) 2.5 2 1.5 24 GHz 25 GHz 26 GHz 27 GHz 28 GHz 1 -18 -15 -12 -9 -6 -3 0 3 6 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 37.2 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +6.5V +26 dBm 150 °C 2.42w 26.9 °C/w -65 to 150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.0 +5.5 +6.0 idd (mA) 375 375 375 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 375mA at +5.5V eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip 3-6 Die Packaging Information standard Gp-2 (Gel pack) [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004” 3. TYpiCAl BonD pAD is .004” sQUAre 4. BACKsiDe meTAlliZATion: GolD 5. BonD pAD meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD. 7. ConneCTion noT reQUireD for UnlABeleD BonD pADs. 8. oVerAll Die siZe ± .002 Pad Descriptions pad number 1 function rfin Description This pad is AC coupled and matched to 50 ohms. interface schematic 2 Vgg Gate control for pA. Adjust Vgg to achieve recommended bias current. external bypass caps 100pf, 0.1 µf and 4.7 µf are required. 3 Vdd Drain bias for amplifier. external bypass caps 100pf, 0.1 µf and 4.7uf are required 4 rfoUT This pad is AC coupled and matched to 50 ohms. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC863 v00.1109 GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 3-8 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: follow esD precautions to protect against > ± 250V esD strikes. Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible