HMC903

HMC903 v00.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz Features low Noise figure: 1.6 dB High Gain: 19 dB p1dB output power: 16 dBm single supply Voltage: +3.5 V @ 90 mA output ip3: 27 dBm 50 ohm matched input/output Die size: 1.33 x 1.08 x 0.1 mm 7 Amplifiers - low Noise - smT Typical Applications This HmC903 is ideal for: • point-to-point radios • point-to-multi-point radios • military & space • Test instrumentation Functional Diagram General Description The HmC903 is a self-biased GaAs mmiC low Noise Amplifier which operates between 6 and 18 GHz. This lNA provides 19 dB of small signal gain, 1.6 dB noise figure, and output ip3 of 27 dBm, while requiring only 90 mA from a +3.5 V supply. The p1dB output power of 16 dBm enables the lNA to function as a lo driver for balanced, i/Q or image reject mixers. The HmC903 also features i/os that are DC blocked and internally matched to 50 ohms for ease of integration into multi-chip-modules (mCms). All data is taken with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mils) length. Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 90 mA [1] parameter frequency range Gain Gain Variation over Temperature Noise figure input return loss output return loss output power for 1 dB Compression saturated output power (psat) output Third order intercept (ip3) supply Current (idd) (Vdd = 3.5V, Vgg1 = Vgg2 = open) [1] Vgg1 = Vgg2 = open for normal, self-biased operation 17 min. Typ. 6 - 18 19 0.013 1.6 11 13 16 18 27 90 2.1 max. Units GHz dB dB / °C dB dB dB dBm dBm dBm mA 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903 v00.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz Gain vs. Temperature 25 +25C +85C -55C Broadband Gain & Return Loss [1] 25 7 Amplifiers - low Noise - smT 7-2 15 RESPONSE (dB) S21 S11 S22 23 5 GAIN (dB) 17 19 21 21 -5 19 -15 17 -25 3 5 7 9 11 13 15 FREQUENCY (GHz) 15 6 8 10 12 14 16 18 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Noise Figure vs. Temperature 6 5 NOISE FIGURE (dB) 4 3 2 1 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Output IP3 vs. Temperature 35 30 25 IP3 (dBm) 20 15 10 5 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903 v00.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz Psat vs. Temperature 25 7 Amplifiers - low Noise - smT P1dB vs. Temperature 25 20 P1dB (dBm) Psat (dBm) 20 15 +25C +85C -55C 15 +25C +85C -55C 10 10 5 5 0 6 8 10 12 14 16 18 FREQUENCY (GHz) 0 6 8 10 12 14 16 18 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -55C Power Compression @ 12 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -4 -21 Pout Gain PAE -18 -15 -12 -9 -6 -3 0 3 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 22 20 GAIN (dB), P1dB (dBm) 18 16 14 12 10 8 3 3.5 Vdd (V) 4 NF P1dB GAIN 7 6 5 4 3 2 1 0 NOISE FIGURE (dB) 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903 v00.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz Absolute Maximum Ratings Drain Bias Voltage rf input power Gate Bias Voltage, Vgg1 Gate Bias Voltage, Vgg2 Channel Temperature Continuous pdiss (T = 85 °C) (derate 6.9 mw/°C above 85 °C) Thermal resistance (Channel to die bottom) storage Temperature operating Temperature +4.5V +10 dBm -0.8V to +0.2V -0.8V to +0.2V 175 °C 0.62 w 144.8 °C/w -65 to +150 °C -55 to +85 °C 7 eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Outline Drawing This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. Die Packaging Information [1] standard Gp-2 (Gel pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NoTes: 1. All DimeNsioNs iN iNCHes [millimeTers] 2. Die THiCKNess is 0.004 (0.100) 3. TYpiCAl BoND pAD is 0.004 (0.100) sQUAre 4. BoND pAD meTAliZATioN: GolD 5. BACKsiDe meTAlliZATioN: GolD 6. BACKsiDe meTAl is GroUND 7. No CoNNeCTioN reQUireD for UNlABeleD BoND pADs 8. oVerAll Die siZe is ±.002 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 Amplifiers - low Noise - smT HMC903 v00.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz 7 Amplifiers - low Noise - smT Pad Descriptions pad Number function Description This pin is AC coupled and matched to 50 ohms interface schematic 1 rfiN 2, 3 Vdd2, Vdd1 power supply voltage for the amplifier see assembly for required external components. 4 rfoUT This pin is AC coupled and matched to 50 ohms 5, 6 Vgg1, Vgg2 optional gate control for amplifier. if left open, the amplifier will run at standard current. Negative voltage applied will reduce current. Die Bottom GND Die bottom must be connected to rf/DC ground. Assembly Diagram 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903 v00.0310 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HmC general Handling, mounting, Bonding Note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.254mm (0.010”) Thick MMIC Wire Bond 0.076mm (0.003”) 7 Amplifiers - low Noise - smT 7-6 RF Ground Plane 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. Do NoT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do NoT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding rf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com