HMC903LP3E

HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Features Low Noise Figure: 1.7 dB High Gain: 18 dB P1dB Output Power: 14 dBm Single Supply Voltage: +3.5 V @ 80 mA Output IP3: +25 dBm 50 Ohm matched Input/Output 16 Lead 3x3mm SMT Package: 9mm² 7 AMPLIFIERS - LOW NOISE - SMT Typical Applications This HMC903LP3E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation Functional Diagram General Description The HMC903LP3E is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 6 and 17 GHz, providing 18 dB of small signal gain, 1.7 dB noise figure, and output IP3 of +25 dBm, while requiring only 80 mA from a +3.5 V supply. The P1dB output power of +14 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC903LP3E also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for high capacity microwave radios and VSAT applications. Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [2] Parameter Frequency Range Gain [1] Min. Typ. 6 - 16 Max. Min. Typ. 16 - 17 18 0.012 Max. Units GHz dB dB / °C 16.5 18.5 0.012 1.7 12 12 14.5 16.5 25 80 110 2.2 Gain Variation over Temperature Noise Figure [1] Input Return Loss Output Return Loss Output Power for 1 dB Compression [1] Saturated Output Power (Psat) [1] Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = 3.5V, Vgg1 = Vgg2 = Open) 2.2 11 14 13 16.5 25 80 2.5 dB dB dB dBm dBm dBm 110 mA [1] Board loss removed from gain, power and noise figure measurement. [2] Vgg1 = Vgg2 = Open for normal, self-biased operation 7-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Gain vs. Temperature [1] 24 22 20 Broadband Gain & Return Loss [1] 25 7 AMPLIFIERS - LOW NOISE - SMT 7-2 15 RESPONSE (dB) S21 S11 S22 5 GAIN (dB) 18 16 14 +25C +85C -40C -5 -15 12 10 3 5 7 9 11 13 15 17 19 6 8 10 12 14 16 18 FREQUENCY (GHz) FREQUENCY (GHz) -25 Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) +25C +85C -40C -5 -10 -10 -15 -15 -20 -20 -25 6 8 10 12 14 16 18 FREQUENCY (GHz) -25 6 8 10 12 14 16 18 FREQUENCY (GHz) Noise Figure vs. Temperature [1] 6 5 NOISE FIGURE (dB) 4 3 2 1 0 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Output IP3 vs. Temperature 30 25 IP3 (dBm) 20 +25C +85C -40C 15 10 5 6 8 10 12 14 16 18 FREQUENCY (GHz) [1] Board loss removed from gain, power and noise figure measurement. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Psat vs. Temperature [1] 25 7 AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature [1] 25 20 P1dB (dBm) Psat (dBm) 20 15 15 +25C +85C -40C 10 +25C +85C -40C 10 5 5 0 6 8 10 12 14 16 18 FREQUENCY (GHz) 0 6 8 10 12 14 16 18 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 6 8 10 12 14 16 18 FREQUENCY (GHz) +25C +85C -40C Power Compression @ 12 GHz [1] 24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -4 -20 Pout Gain PAE -17 -14 -11 -8 -5 -2 1 4 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz [1] 22 20 GAIN (dB), P1dB (dBm) 18 16 14 12 10 8 3 3.5 Vdd (V) 4 7 6 5 4 3 2 1 0 Gain, Output IP3 & Idd vs. Gate Voltage @ 12 GHz [2][3] 30 25 GAIN (dB), IP3 (dBm) NOISE FIGURE (dB) 20 15 10 5 0 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 Vgg1, Vgg2 Gate Volltage (Vdc) Idd Gain IP3 120 100 80 Idd (mA) 60 40 20 0 [1] Board loss removed from gain, power and noise figure measurement. [2] Board loss removed from gain measurement [3] Data taken at Vdd1 = Vdd2 = 3V 7-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Absolute Maximum Ratings Drain Bias Voltage RF Input Power Gate Bias Voltage, Vgg1 Gate Bias Voltage, Vgg2 Channel Temperature Continuous Pdiss (T = 85 °C) (derate 6.9 mW/°C above 85 °C) Thermal Resistance (Channel to ground paddle) Storage Temperature +4.5V +10 dBm -0.8V to +0.2V -0.8V to +0.2V 150 °C 0.45 W 144.8 °C/W -65 to +150 °C -40 to +85 °C Current vs. Input Power @ 12 GHz 94 92 90 Idd (mA) 88 86 84 82 80 78 -30 7 AMPLIFIERS - LOW NOISE - SMT 7-4 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 3 Operating Temperature INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number HMC903LP3E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn [2] Package Marking [1] 903 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz 7 AMPLIFIERS - LOW NOISE - SMT Pin Descriptions Pin Number 1, 4, 5, 8, 9, 12, 13, 16 Function N/C Description The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. Package bottom has exposed metal ground paddle that must be connected to RF/DC ground. Interface Schematic 2, 11 GND 3 RFIN This pin is AC coupled and matched to 50 Ohms 6, 7 Vgg1, Vgg2 Optional gate control for amplifier. If left open, the amplifier will run self-biased at standard current. Negative voltage applied will reduce drain current. External capacitors required, see application circuits herein. 10 RFOUT This pin is AC coupled and matched to 50 Ohms 14, 15 Vdd2, Vdd1 Power supply voltage for the amplifier. See assembly for required external components. 7-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Evaluation PCB 7 AMPLIFIERS - LOW NOISE - SMT List of Material for Evaluation PCB 129798 Item J1, J2 J3, J4, J6 - J8 C1, C4, C7, C10 C2, C5, C8, C11 C3, C6, C9, C12 U1 PCB [2] SMA Connector DC Pins 100 pF Capacitor, 0402 Pkg. 10 KpF Capacitor, 0402 Pkg. 4.7 µF Capacitor, Tantalum HMC903LP3E Amplifier 128395 Evaluation PCB Description [1] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 HMC903LP3E v00.0210 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz 7 AMPLIFIERS - LOW NOISE - SMT Application Circuit - Standard (Self-Biased) Operation Application Circuit - Gate Control, Reduced Current Operation 7-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC903LP3E v00.0210 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Notes: 7 AMPLIFIERS - LOW NOISE - SMT F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8