HMC906

HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Features saturated output power: +34 dBm @ 22% pAe high output ip3: +43 dBm high Gain: 23 dB DC supply: +6V @ 1200 mA no external matching required Die size: 3.18 x 2.73 x 0.1 mm Typical Applications The hmC906 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT • Military & Space 3 Amplifiers - lineAr & power - Chip Functional Diagram General Description The hmC906 is a four stage GaAs phemT mmiC 2 watt power Amplifier which operates between 27.3 and 33.5 Ghz. The hmC906 provides 23 dB of gain, and +34 dBm of saturated output power and 22% pAe from a +6V supply. The rf i/os are DC blocked and matched to 50 ohms for ease of integration into multi-Chip-modules (mCms). All data is taken with the chip in a 50 ohm test fixture connected via two 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1] parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3)[2] Total supply Current (idd) [1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve idd = 1200 mA typical. [2] measurement taken at +6V @ 1200 mA, pout / Tone = +23 dBm 40 10 8 31 20 min. Typ. 27.3 - 31.5 23 0.022 14 12 33 34 43 1200 39 10 10 30.5 20 max. min. Typ. 31.5 - 33.5 23 0.026 14 12 32.5 33.5 42 1200 max. Units Ghz dB dB/ °C dB dB dBm dBm dBm mA 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Gain vs. Temperature 30 Broadband Gain & Return Loss vs. Frequency 30 20 RESPONSE (dB) 10 0 -10 S21 S11 S22 26 GAIN (dB) 22 3 +25C +85C -55C 18 -20 -30 20 22 24 26 28 30 32 FREQUENCY (GHz) 34 36 38 14 27 28 29 30 31 32 33 34 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -20 RETURN LOSS (dB) -10 -10 -20 -30 +25C +85C -55C -30 +25C +85C -55C -40 27 28 29 30 31 32 33 34 FREQUENCY (GHz) -40 25 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) P1dB vs. Temperature 37 P1dB vs. Supply Voltage 37 35 P1dB (dBm) P1dB (dBm) 35 33 33 31 +25C +85C -55C 31 +5.0V +5.5V +6.0V 29 29 27 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 27 27 28 29 30 31 32 33 34 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Psat vs. Supply Voltage 37 Psat vs. Temperature 37 Psat (dBm) Psat (dBm) 3 Amplifiers - lineAr & power - Chip 35 35 33 33 31 +25C +85C -55C 31 +5.0V +5.5V +6.0V 29 29 27 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 27 27 28 29 30 31 32 33 34 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 37 Psat vs. Supply Current (Idd) 37 35 P1dB (dBm) Psat (dBm) 35 33 33 1000 mA 1200 mA 1300 mA 31 1000mA 1200mA 1300mA 31 29 29 27 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 27 27 28 29 30 31 32 33 34 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +23 dBm 50 45 Output IP3 vs. Supply Current, Pout/Tone = +23 dBm 50 45 IP3 (dBm) 35 +25C +85C -55C IP3 (dBm) 40 40 1000 mA 1200 mA 1300 mA 35 30 30 25 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 25 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Output IM3 @ Vdd = +5V 70 60 50 Output IP3 vs. Supply Voltage, Pout/Tone = +23 dBm 50 45 IP3 (dBm) IM3 (dBc) 40 +5.0V +5.5V +6.0V 40 30 20 10 0 29 GHz 30 GHz 31 GHz 32 GHz 33 GHz 3 13 15 17 19 21 23 25 27 35 30 25 27 28 29 30 31 32 33 34 FREQUENCY (GHz) Pout/TONE (dBm) Output IM3 @ Vdd = +5.5V 70 60 50 IM3 (dBc) 40 30 20 10 0 13 15 17 19 21 23 25 27 Pout/TONE (dBm) 29 GHz 30 GHz 31 GHz 32 GHz 33 GHz Output IM3 @ Vdd = +6V 70 60 50 IM3 (dBc) 40 30 20 10 0 13 15 17 19 21 23 25 27 Pout/TONE (dBm) 29 GHz 30 GHz 31 GHz 32 GHz 33 GHz Power Compression @ 29.5 GHz 36 Pout (dBm), GAIN (dB), PAE (%) 32 28 24 20 16 12 8 4 0 -9 -6 -3 0 3 6 9 12 15 INPUT POWER (dBm) Pout Gain PAE Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 27 28 29 30 31 32 33 34 FREQUENCY (GHz) +25C +85C -55C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-4 Amplifiers - lineAr & power - Chip HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Gain & Power vs. Supply Voltage @ 29.5 GHz 40 Gain & Power vs. Supply Current @ 29.5 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 3 Amplifiers - lineAr & power - Chip 35 35 30 Gain P1dB Psat 30 25 25 20 20 Gain P1dB Psat 15 1000 1100 1200 1300 15 5 5.5 6 Idd (mA) Vdd (V) Power Dissipation 10 9 POWER DISSIPATION (W) 8 7 6 5 4 3 2 1 0 0 4 8 INPUT POWER (dBm) 12 16 Max Pdis @ 85C 28GHz 29GHz 30GHz 31GHz Absolute Maximum Ratings Drain Bias Voltage (Vd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 135 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +7V +20 dBm 150 °C 8.8 w 7.4 °C/w -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.0 +5.5 +6.0 idd (mA) 1200 1200 1200 Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 1200 mA at +6.0V eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip 3-6 Die Packaging Information standard Gp-2 (Gel pack) [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004” 3. TYpiCAl BonD pAD is .004” sQUAre 4. BACKsiDe meTAlliZATion: GolD 5. BonD pAD meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD. 7. ConneCTion noT reQUireD for UnlABeleD BonD pADs. 8. oVerAll Die siZe ± 0.002” For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Pad Descriptions pad number 1 function rfin Description This pad is AC coupled and matched to 50 ohms over the operating frequency range. Gate control for amplifier. external bypass caps 100 pf, 0.01 µf and 4.7 µf are required. only one pad connection is required as these two pads are connected on-chip. interface schematic 3 Amplifiers - lineAr & power - Chip 2, 12 Vgg 3-6 Vdd1 Drain bias voltage for the top half of the amplifier. external bypass capacitors of 100 pf required for each pad, followed by common 0.1 µf and 4.7 µf are capacitors. This pad is AC coupled and matched to 50 ohms. Drain bias voltage for the lower half of the amplifier. external bypass capacitors of 100 pf required for each pad, followed by common 0.1 µf and 4.7 µf are capacitors. 7 rfoUT 8 - 11 Vdd2 Die Bottom GnD Die bottom must be connected to rf/DC ground. Application Circuit *Vgg may be applied to either pad 2 or pad 12. 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Assembly Diagram [1] 3 Amplifiers - lineAr & power - Chip 3-8 [1] Vgg may be applied to either pad 2 or pad 12. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding rf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Notes: 3 Amplifiers - lineAr & power - Chip For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 - 10