HMC939

HMC939 v00.0910 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Features 1.0 dB LSB Steps to 31 dB Single Positive Control Line Per Bit ±1.0 dB Typical Bit Error High Input IP3: +43 dBm Die Size: 2.36 x 1.02 x 0.1 mm 1 ATTENUATORS - DIGITAL - CHIP Typical Applications The HMC939 is ideal for: • Fiber Optics & Broadband Telecom • Microwave Radio & VSAT • Military Radios, Radar & ECM • Space Applications Functional Diagram General Description The HMC939 die is a broadband 5-bit GaAs IC digital attenuator MMIC chip. Covering 0.1 to 40 GHz, the insertion loss is less than 5 dB typical. The attenuator bit values are 1.0 (LSB), 2, 4, 8, 16 for a total attenuation of 31 dB. Attenuation accuracy is excellent at less than ±1.0 dB typical step error with an IIP3 of +43 dBm. Five control voltage inputs, toggled between +5V and 0V, are used to select each attenuation state. Electrical Specifications, TA = +25° C, With Vdd = +5V, Vss = -5V & VCTL = 0/ +5V Parameter Insertion Loss Attenuation Range Return Loss (RF1 & RF2, All Atten. States) Attenuation Accuracy: (Referenced to Insertion Loss) 1.0 - 15 dB States 16 - 31 dB States Input Power for 0.1 dB Compression Input Third Order Intercept Point (Two-Tone Input Power= 0 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON/tOFF (50% CTL to 10/90% RF) Idd Iss 0.1 - 40 GHz 0.1 - 40 GHz 3 -4 0.1 - 40 GHz 0.1 - 40 GHz 0.1 - 0.5 GHz 0.5 - 40.0 GHz 0.1 - 0.5 GHz 0.5 - 40.0 GHz 0.1 - 40 GHz 60 90 5 -6 7 -8 ns ns mA mA ± 0.5 + 5% of Atten. Setting Max ± 0.6 + 6% of Atten. Setting Max 20 25 40 43 dB dB dBm dBm dBm dBm Frequency (GHz) 0.1 - 18 GHz 18 - 40 GHz 0.1 - 40 GHz 0.1 - 40 GHz Min. Typ. 3.5 6.0 31 12 Max. 5.0 7.5 Units dB dB dB dB 1-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC939 v00.0910 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Normalized Attenuation 0 NORMALIZED ATTENUATION (dB) -5 -10 -15 -20 -25 -30 -35 Insertion Loss vs. Temperature 0 -1 INSERTION LOSS (dB) -2 -3 -4 -5 -6 -7 -8 -9 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) +25 C +85 C -55 C (Only Major States are Shown) 1 ATTENUATORS - DIGITAL - CHIP 1-2 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Input Return Loss 0 (Only Major States are Shown) Output Return Loss 0 (Only Major States are Shown) -10 RETURN LOSS (dB) RETURN LOSS (dB) 0 5 10 15 20 25 30 35 40 45 50 -10 -20 -20 -30 -30 -40 -40 -50 FREQUENCY (GHz) -50 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Bit Error vs. Attenuation State 2 1.6 1.2 BIT ERROR (dB) Bit Error vs. Frequency 3 2 31 dB (Only Major States are Shown) BIT ERROR (dB) 0.8 0.4 0 -0.4 -0.8 -1.2 -1.6 -2 0 4 8 12 16 20 24 28 32 ATTENUATION STATE (dB) 10 GHz 20 GHz 40 GHz 1 0 -1 -2 -3 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC939 v00.0910 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Step Attenuation vs. Attenuation State 2.4 2 1.6 1.2 0.8 0.4 0 -0.4 0 4 8 12 16 20 24 28 32 ATTENUATION STATE (dB) 10 GHz 20 GHz 40 GHz 1 ATTENUATORS - DIGITAL - CHIP Relative Phase vs. Frequency (Only Major States are Shown) 160 140 RELATIVE PHASE (deg) 120 100 80 60 40 20 0 -20 0 5 10 15 20 25 30 35 40 45 50 31 dB FREQUENCY (GHz) Input IP3 Over Major Attenuation States 60 Input IP3 vs. Temperature (Minimum Attenuation State) 60 50 IP3 (dBm) IP3 (dBm) STEP ATTENUATION (dB) 50 40 40 +25 C +85 C -40 C 30 30 20 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) 20 0.1 1 10 100 FREQUENCY (GHz) Input Power for 0.1 dB Compression 28 24 P0.1dB (dBm) 20 16 12 8 4 0.01 0.1 1 FREQUENCY (GHz) 10 100 1-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC939 v00.0910 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Truth Table Bias Voltages & Currents Vdd Vss +5V @ 5 mA -5V @ 6 mA 1 High High High Low High High Low High High Low High High High Low High Low High High High High Low Reference I.L. 1 dB 2 dB 4 dB 5 dB 16 dB 31 dB Control Voltage Input P4 16 dB High High High High High Low Low P3 8 dB High High High High Low High Low P2 4 dB P1 2 dB P0 1 dB Control Voltage State Low High Bias Condition 0 to 0.8V @ 1 µA 2 to 5V @ 1 µA Absolute Maximum Ratings RF Input Power (0.5 to 40 GHz) Control Voltage (P0 to P4) Vdd Vss Channel Temperature Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +25 dBm Vdd + 0.5V +7 Vdc -7 Vdc 150 °C 144 °C/W -65 to + 150 °C -55 to +85 °C Any Combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information Standard WP-9 (Waffle Pack) [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. TYPICAL BOND PAD IS .004” SQUARE. 3. TYPICAL BOND PAD SPACING IS .006” CENTER TO CENTER EXCEPT AS NOTED. 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 1-4 ATTENUATORS - DIGITAL - CHIP Attenuation State RF1 - RF2 HMC939 v00.0910 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz 1 ATTENUATORS - DIGITAL - CHIP Pad Descriptions Pad Number Function GND Description Die bottom must be connected to RF ground. This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. Interface Schematic 1, 9 RF1, RF2 2 Vss Negative Bias -5V 3-7 P0 - P4 See truth table and control voltage table. 8 Vdd Positive Bias +5V Assembly Diagram 1-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC939 v00.0910 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 1 ATTENUATORS - DIGITAL - CHIP 1-6 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible