HMC943LP5E

HMC943LP5E v00.0910 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Features Saturated Output Power: +34 dBm @ 24% PAE High Output IP3: +41 dBm High Gain: 21 dB DC Supply: +5.5V @ 1200 mA No External Matching Required 32 Lead 5x5 mm SMT Package: 25 mm² Typical Applications The HMC943LP5E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT • Military & Space AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9 Functional Diagram General Description The HMC943LP5E is a four stage GaAs pHEMT MMIC 1.5 Watt Power Amplifier which operates between 24 and 31.5 GHz. The HMC943LP5E provides 22 dB of gain, and +34 dBm of saturated output power and 24% PAE from a +5.5V supply. The high output IP3 of +41 dBm makes the HMC943LP5E ideal for microwave radio applications. The HMC943LP5E amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5x5 mm surface mount package and requires no external matching components. Electrical Specifications, TA = +25° C, Vd1 = Vd8 = +5.5 V, Idd = 1200 mA [1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Total Supply Current (Idd) [1] Adjust Vg1 and Vg2 between -2 to 0V to achieve Idd = 1200 mA typical. [2] Measurement taken at +5.5V @ 1200 mA, Pout / Tone = +22 dBm 29 18 Min. Typ. 24 - 26.5 21 0.03 9 12 32 33 41 1200 27 16 Max. Min. Typ. 26.5 - 31.5 19 0.028 9.5 12 31 33 39 1200 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 3 9-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC943LP5E v00.0910 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Gain vs. Temperature 30 Broadband Gain & Return Loss vs. Frequency 30 20 26 RESPONSE (dB) 10 0 -10 18 -20 -30 20 22 24 26 28 30 32 FREQUENCY (GHz) 34 36 38 14 23 24 25 26 27 28 29 30 31 GAIN (dB) S21 S11 S22 +25C +85C -40C 22 32 33 34 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 +25C +85C -40C -4 RETURN LOSS (dB) -4 RETURN LOSS (dB) -8 -8 -12 -12 -16 -16 -20 23 24 25 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) -20 23 24 25 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) P1dB vs. Temperature 37 +25C +85C -40C P1dB vs. Supply Voltage 37 +5.0V +5.5V +6.0V 35 P1dB (dBm) 35 P1dB (dBm) 33 33 31 31 29 29 27 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) 27 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 9-2 AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9 HMC943LP5E v00.0910 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Psat vs. Supply Voltage 39 Psat vs. Temperature 39 +25C +85C -40C AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9 37 Psat (dBm) 37 Psat (dBm) +5.0V +5.5V +6.0V 35 35 33 33 31 31 29 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) 29 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 37 1000mA 1200mA 1300mA Psat vs. Supply Current (Idd) 39 1000mA 1200mA 1300mA 35 P1dB (dBm) 37 Psat (dBm) 33 35 31 33 29 31 27 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) 29 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +22 dBm 50 45 Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 50 45 IP3 (dBm) 35 +25C +85C -40C IP3 (dBm) 40 40 35 1000mA 1200mA 1300mA 30 30 25 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) 25 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) 3 9-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC943LP5E v00.0910 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Output IM3 @ Vdd = +5V 60 50 40 Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm 50 +5.0V +5.5V +6.0V 45 IP3 (dBm) IM3 (dBc) 40 30 20 35 30 10 0 27 28 29 30 31 32 33 34 15 16 17 18 19 24 GHz 26 GHz 28 GHz 30 GHz 32 GHz 25 FREQUENCY (GHz) 20 21 22 23 24 25 Pout/TONE (dBm) Output IM3 @ Vdd = +5.5V 60 50 40 IM3 (dBc) 30 20 10 0 15 16 17 18 19 20 21 22 23 24 25 Pout/TONE (dBm) Output IM3 @ Vdd = +6V 60 50 40 IM3 (dBc) 30 20 10 0 15 16 17 18 19 20 21 22 23 24 25 Pout/TONE (dBm) 24 GHz 26 GHz 28 GHz 30 GHz 32 GHz 24 GHz 26 GHz 28 GHz 30 GHz 32 GHz Power Compression @ 24 GHz 36 Pout (dBm), GAIN (dB), PAE (%) 32 28 24 20 16 12 8 4 0 0 3 6 9 12 15 18 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 29 GHz 36 Pout (dBm), GAIN (dB), PAE (%) 32 28 24 20 16 12 8 4 0 0 3 6 9 12 15 18 INPUT POWER (dBm) Pout Gain PAE For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 9-4 AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9 HMC943LP5E v00.0910 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Reverse Isolation 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 +25C +85C -40C Power Compression @ 32 GHz 36 Pout (dBm), GAIN (dB), PAE (%) 32 28 24 20 16 12 8 4 0 0 3 6 9 12 15 18 21 INPUT POWER (dBm) Pout Gain PAE AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9 27 28 29 30 31 32 33 34 FREQUENCY (GHz) Gain & Power vs. Supply Current @ 26 GHz 40 Gain & Power vs. Supply Voltage @ 26 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) 35 Gain (dB), P1dB (dBm), Psat (dBm) 35 30 Gain P1dB Psat 30 Gain P1dB Psat 25 25 20 20 15 1000 1100 1200 1300 15 5 5.5 6 Idd (mA) Vdd (V) Power Dissipation @ 6V, 1200 mA 10 9 POWER DISSIPATION (W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 INPUT POWER (dBm) Max Pdis @ 85C 25GHz 26GHz 27GHz 28GHz 29GHz 30GHz 31GHz 32GHz 3 9-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC943LP5E v00.0910 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Supply Current vs. Vdd Vdd (V) +5.0 +5.5 +6.0 Idd (mA) 1200 1200 1200 Absolute Maximum Ratings Drain Bias Voltage (Vd) RF Input Power (RFIN) Channel Temperature Continuous Pdiss (T= 85 °C) (derate 135 mW/°C above 85 °C) Thermal Resistance (channel to package bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +7V +20 dBm 150 °C 8.8 W 7.4 °C/W -65 to +150 °C -55 to +85 °C Class 0, 150V Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1200mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. Package Information Part Number HMC943LP5E Package Body Material Lead Finish 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H943 XXXX RoHS-compliant Low Stress Injection Molded Plastic [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 9-6 AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9 HMC943LP5E v00.0910 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Pin Descriptions Pin Number 1, 3, 5, 8, 9, 16, 17, 20, 22, 24, 25, 32 2, 6, 7, 14, 18, 19, 23, 27 4 Function GND Description These pins and package bottom must be connected to RF/DC ground. These pins are not connected internally;however, all data shown herein was measured with these pins connected to RF/DC ground externally. RF signal input. This pad is AC coupled and matched to 50 Ohms over the operating frequency range. Interface Schematic AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9 N/C RFIN 10, 31 VG1, VG2 Gate control for amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on each. 11 - 13, 15, 26, 28 - 30 VD2, VD4, VD6, VD8, VD7, VD5, VD3, VD1 Drain bias for the amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on each. 21 RFOUT RF signal output. This pad is AC coupled and matched to 50 ohms over the operating frequency range. Application Circuit 3 9-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC943LP5E v00.0910 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Evaluation PCB List of Materials for Evaluation PCB 130027 [1] Item J1, J2 J3, J4 C1 - C10 C11 - C20 C21 - C30 U1 PCB [2] Description SRI, K Connectors DC Pins 100 pF Capacitors, 0402 Pkg. 10000 pF Capacitors, 0402 Pkg. 4.7 µF Capacitors, Case A Pkg. HMC943LP5E Power Amplifier 130025 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 9-8 AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9