HMC949

HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Features saturated output power: +35.5 dBm @ 26% pAe high output ip3: +42 dBm high Gain: 31 dB DC supply: +7V @ 1200 mA no external matching required Die size: 2.71 x 1.73 x 0.1 mm Typical Applications The hmC949 is ideal for: • point-to-point radios 3 Amplifiers - lineAr & power - Chip • point-to-multi-point radios • VsAT & sATCom • military & space Functional Diagram General Description The hmC949 is a 4 stage GaAs phemT mmiC 2 watt power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12 and 16 Ghz. The hmC949 provides 31 dB of gain, +35.5 dBm of saturated output power, and 26% pAe from a +7V supply. The hmC949 exhibits excellent linearity and is optimized for high capacity digital microwave radio. it is also ideal for 13.75 to 14.5 Ghz Ku Band VsAT transmitters as well as sATCom applications. All data is taken with the chip in a 50 ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Electrical Specifications parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept Total supply Current (idd) (ip3)[2] TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1] min. Typ. 12 - 16 28 31 0.05 10 17 32.5 34.5 35.5 42 1200 max. Units Ghz dB dB/ °C dB dB dBm dBm dBm mA [1] Adjust Vgg between -2 to 0V to achieve idd = 1200mA typical. [2] measurement taken at +7V @ 1200mA, pout / Tone = +22 dBm 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Broadband Gain & Return Loss vs. Frequency 40 30 RESPONSE (dB) 20 GAIN (dB) 10 0 -10 -20 -30 10 11 12 13 14 15 FREQUENCY (GHz) 16 17 18 22 S21 S11 S22 Gain vs. Temperature 38 34 30 3 +25C +85C -55C 26 18 11 12 13 14 15 16 17 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -55C -4 RETURN LOSS (dB) -8 -12 -16 -20 11 12 13 14 15 16 17 FREQUENCY (GHz) 11 12 13 14 15 16 17 FREQUENCY (GHz) P1dB vs. Temperature 38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16 +25C +85C -55C P1dB vs. Supply Voltage 38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16 5V 6V 7V P1dB (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com P1dB (dBm) 3-2 Amplifiers - lineAr & power - Chip HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Psat vs. Temperature 38 Psat vs. Supply Voltage 38 P1dB (dBm) 34 +25C +85C -55C P1dB (dBm) 3 Amplifiers - lineAr & power - Chip 36 36 34 32 32 5V 6V 7V 30 30 28 12 13 14 FREQUENCY (GHz) 15 16 28 12 13 14 FREQUENCY (GHz) 15 16 P1dB vs. Supply Current (Idd) 38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16 Psat vs. Supply Current (Idd) 38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16 800 mA 900 mA 1000 mA 1100 mA 1200 mA P1dB (dBm) 800 mA 900 mA 1000 mA 1100 mA 1200 mA Output IP3 vs. Temperature, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 +25C +85C -55C Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 800 mA 900 mA 1000 mA 1100 mA 1200 mA 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com P1dB (dBm) HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 5V 6V 7V Output IM3 @ Vdd = +5V 80 70 60 IM3 (dBc) 50 40 30 20 10 0 10 12 14 16 18 20 22 24 26 28 Pout/TONE (dBm) 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 3 Amplifiers - lineAr & power - Chip 3-4 Output IM3 @ Vdd = +6V 80 70 60 IM3 (dBc) Output IM3 @ Vdd = +7V 80 70 60 IM3 (dBc) 50 40 30 20 10 0 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 50 40 30 20 10 0 10 12 14 16 18 20 22 24 26 28 Pout/TONE (dBm) 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 10 12 14 16 18 20 22 24 26 28 Pout/TONE (dBm) Power Compression @ 14 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -10 Pout Gain PAE Detector Voltage Over Temperature 10 Vref-Vdet (V) 1 12.5GHz +25C 12.5GHz +85C 12.5GHz -55C 15.5GHz +25C 15.5GHz +85C 15.5GHz -55C 0.1 0.01 -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) -5 3 11 19 27 35 OUTPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Reverse isolation vs. Temperature 0 -10 +25C +85C -55C Gain & Power vs. Supply Current @ 14 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) ISOLATION (dB) 3 Amplifiers - lineAr & power - Chip -20 -30 -40 -50 -60 -70 -80 11 12 13 14 35 30 Gain P1dB Psat 25 20 15 15 16 17 800 900 1000 1100 1200 FREQUENCY (GHz) Idd (mA) Gain & Power vs. Supply Voltage @ 14 GHz 50 Gain (dB), P1dB (dBm), Psat (dBm) 45 40 35 30 25 20 5 5.5 6 Vdd (V) 6.5 7 Power Dissipation 10 9 POWER DISSIPATION (W) Gain P1dB Psat 8 7 6 5 4 3 2 1 0 -10 -8 -6 -4 -2 0 2 4 6 8 Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 133 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +8V +24 dBm 150 °C 8.6 w 7.5 °C/w -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.0 +6.0 +7.0 idd (mA) 1200 1200 1200 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1200 mA eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip 3-6 Die Packaging Information standard Gp-1 [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004” 3. TYpiCAl BonD pAD is .004” sQUAre 4. BACKsiDe meTAlliZATion: GolD 5. BonD pAD meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD. 7. ConneCTion noT reQUireD for UnlABeleD BonD pADs. 8. oVerAll Die siZe ± .002 Pad Descriptions pad number 1 function rfin Description This pad is DC coupled and matched to 50 ohms over the operating frequency range. interface schematic 2-5 Vdd1, Vdd2, Vdd3, Vdd4 Vdd4, Vdd5 9 - 10 Drain bias voltage for the amplifier. external bypass capacitors of 100 pf are required for each pad, followed by common 0.1 µf capacitors. 6 rfoUT This pad is DC coupled and matched to 50 ohms. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Pad Descriptions (continued) pad number 7 function Vdet Description DC voltage representing rf output power rectified by diode which is biased through an external resistor. DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. interface schematic 3 Amplifiers - lineAr & power - Chip 8 Vref 11 - 14 Vgg1 Gate control for amplifier. external bypass capacitors of 100 pf and 0.1 µf are required. These pads are connected on chip Die Bottom GnD Die bottom must be connected to rf/DC ground. Application Circuit 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-8 HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: follow esD precautions to protect against > ± 250V esD strikes. Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible