HMC950_11

HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Features saturated output power: +37 dBm @ 23% pAe high output ip3: +44.5 dBm high Gain: 28 dB DC supply: +7V @ 2400 mA no external matching required Die size: 3.23 x 3.45 x 0.1 mm Typical Applications The hmC950 is ideal for: • Point-to-Point Radios 3 Amplifiers - lineAr & power - Chip • Point-to-Multi-Point Radios • VSAT & SATCOM • Military & Space Functional Diagram General Description The hmC950 is a four stage GaAs phemT mmiC 4 watt power Amplifier which operates between 12 and 16 Ghz. The hmC950 provides 28 dB of gain, +37 dBm of saturated output power, and 23% pAe from a +7V power supply. The hmC950 exhibits excellent linearity and is optimized for high capacity point to point and point to multi-point radio systems. it is also ideal for 13.75 to 14.5 Ghz Ku Band VsAT transmitters as well as sATCom applications. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +7V, Idd = 2400 mA [1] parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3)[2] Total supply Current (idd) [1] Adjust Vgg between -2 to 0V to achieve idd = 2400 mA typical. [2] measurement taken at +7V @ 2400 mA, pout / Tone = +24 dBm 34.5 26 min. Typ. 12 - 13 28 0.056 17 17 36.5 37 43 2400 34.5 26 max. min. Typ. 13 - 16 28 0.056 16 17 36.5 37 44.5 2400 max. Units Ghz dB dB/ °C dB dB dBm dBm dBm mA Electrical Specifications, TA = +25° C 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Gain vs. Temperature 36 Broadband Gain & Return Loss vs. Frequency 40 30 RESPONSE (dB) 20 32 S21 S11 S22 GAIN (dB) 10 0 -10 -20 -30 10 11 12 28 3 +25C +85C -55C 24 20 16 13 14 15 FREQUENCY (GHz) 16 17 18 11 12 13 14 15 16 17 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 -4 RETURN LOSS (dB) -8 -12 -16 -20 -24 +25C +85C -55C -4 RETURN LOSS (dB) -8 -12 -16 -20 11 12 13 14 15 16 17 FREQUENCY (GHz) 11 12 13 14 15 16 17 FREQUENCY (GHz) P1dB vs. Temperature 40 +25C +85C -55C P1dB vs. Supply Voltage 40 5V 6V 7V 38 P1dB (dBm) 38 P1dB (dBm) 36 36 34 34 32 32 30 12 13 14 FREQUENCY (GHz) 15 16 30 12 13 14 FREQUENCY (GHz) 15 16 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Psat vs. Supply Voltage 40 Psat vs. Temperature 40 Psat (dBm) 36 +25C +85C -55C Psat (dBm) 3 Amplifiers - lineAr & power - Chip 38 38 36 34 34 5V 6V 7V 32 32 30 12 13 14 FREQUENCY (GHz) 15 16 30 12 13 14 FREQUENCY (GHz) 15 16 P1dB vs. Supply Current (Idd) 40 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA Psat vs. Supply Current (Idd) 40 38 P1dB (dBm) 38 Psat (dBm) 36 36 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA 34 34 32 32 30 12 13 14 FREQUENCY (GHz) 15 16 30 12 13 14 FREQUENCY (GHz) 15 16 Output IP3 vs. Temperature, Pout/Tone = +24 dBm 50 Output IP3 vs. Supply Current, Pout/Tone = +24 dBm 50 45 IP3 (dBm) IP3 (dBm) 45 40 +25C +85C -55C 40 1600 mA 1800 mA 2000 mA 2200 mA 2400 mA 35 35 30 12 13 14 FREQUENCY (GHz) 15 16 30 12 13 14 FREQUENCY (GHz) 15 16 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Output IM3 @ Vdd = +5V 80 70 Output IP3 vs. Supply Voltage, Pout/Tone = +24 dBm 50 45 IP3 (dBm) IM3 (dBc) 60 50 40 30 20 10 12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz 40 5V 6V 7V 3 10 12 14 16 18 20 22 24 26 28 35 30 12 13 14 FREQUENCY (GHz) 15 16 0 Pout/TONE (dBm) Output IM3 @ Vdd = +6V 80 70 60 IM3 (dBc) Output IM3 @ Vdd = +7V 80 70 60 IM3 (dBc) 50 40 30 20 10 0 12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz 50 40 30 20 10 0 10 12 14 16 18 20 22 24 26 28 Pout/TONE (dBm) 12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz 10 12 14 16 18 20 22 24 26 28 Pout/TONE (dBm) Power Compression @ 14 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -12 Pout Gain PAE Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 +25C +85C -55C -9 -6 -3 0 3 6 9 12 15 16 18 20 FREQUENCY (GHz) 22 24 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-4 Amplifiers - lineAr & power - Chip HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Gain & Power vs. Supply Voltage @ 14 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) Gain & Power vs. Supply Current @ 14 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) 3 Amplifiers - lineAr & power - Chip 35 35 30 30 25 Gain P1dB Psat 25 Gain P1dB Psat 20 1600 20 1800 2000 Idd (mA) 2200 2400 5 5.5 6 Vdd (V) 6.5 7 Power Dissipation 20 POWER DISSIPATION (W) 18 16 14 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 12 10 -12 -9 -6 -3 0 3 6 9 12 15 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 306 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +8V +27 dBm 150 °C 19.9 w 3.27 °C/w -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.0 +6.0 +7.0 idd (mA) 2400 2400 2400 Note: Amplifier will operate over full voltage ranges shown above, Vgg adjusted to achieve Idd = 2400 mA at +7V eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip Die Packaging Information standard Gp-1 (Gel pack) [1] noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004” 3. TYpiCAl BonD pAD is .004” sQUAre 4. BACKsiDe meTAlliZATion: GolD 5. BonD pAD meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD. 7. ConneCTion noT reQUireD for UnlABeleD BonD pADs. 8. oVerAll Die siZe ± .002 Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-6 HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Pad Descriptions pad number 1 function rfin Description This pad is DC coupled and matched to 50 ohms over the operating frequency range. interface schematic 3 Amplifiers - lineAr & power - Chip 2, 12 Vgg1 Gate control for amplifier. external bypass capacitors of 100 pf, 0.01 µf and 4.7 µf are required. The pads are connected on chip. Vgg may be applied to either pad 2 or pad 12 3-6 Vdd1, Vdd2, Vdd3, Vdd4 Vdd8, Vdd7, Vdd6, Vdd5 rfoUT 8 - 11 Drain bias voltage for the amplifier. external bypass capacitors of 100 pf are required for each pad, followed by common 0.1 µf capacitors. 7 This pad is DC coupled and matched to 50 ohms. Die Bottom GnD Die bottom must be connected to rf/DC ground. Application Circuit 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-8 HMC950 v03.0611 GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: follow esD precautions to protect against > ± 250V esD strikes. Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible