HMC963LC4
v01.1210
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 26.5 GHz
Features
low Noise figure: 2.5 dB High Gain: 22 dB p1dB output power: 10 dBm single supply Voltage: +3.5V @ 45mA output ip3: +18 dBm 50 ohm matched input/output 24 lead 4x4 mm smT package: 16mm²
7
Amplifiers - low Noise - smT
Typical Applications
This HmC963lC4 is ideal for: • point-to-point radios • point-to-multi-point radios • military & space • Test instrumentation
Functional Diagram
General Description
The HmC963lC4 is a self-biased GaAs mmiC low Noise Amplifier housed in a leadless 4x4 mm ceramic surface mount package. The amplifier operates between 6 and 26.5 GHz, providing 20 dB of small signal gain, 2.5 dB noise figure, and output ip3 of +18 dBm, while requiring only 45 mA from a +3.5 V supply. The p1dB output power of +10 dBm enables the lNA to function as a lo driver for balanced, i/Q or image reject mixers. The HmC963lC4 also features i/os that are DC blocked and internally matched to 50 ohms, making it ideal for high capacity microwave radios and VsAT applications.
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 45 mA
parameter frequency range Gain Gain Variation over Temperature Noise figure [1] input return loss output return loss output power for 1 dB Compression saturated output power (psat) output Third order intercept (ip3) supply Current (idd) (Vdd = 3.5V, Vgg1 = Vgg2 = open) [1] Board loss subtracted out. 7 16.5 min. Typ. 6 - 26.5 22 0.03 2.5 10 10 10 12 18 45 65 3.5 max. Units GHz dB dB / °C dB dB dB dBm dBm dBm mA
7-1
F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC963LC4
v01.1210
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 26.5 GHz
Gain vs. Temperature
30
Broadband Gain & Return Loss
30 20 RESPONSE (dB) 10 0 -10 -20 -30 4 6 8 10 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz)
7
Amplifiers - low Noise - smT
7-2
26
S21 S11 S22
GAIN (dB)
22
18
+25C +85C -40C
14
10 6 8 10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 -2 -4 RETURN LOSS (dB) -6 -8 -10 -12 -14 -16 -18 -20 6 8 10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
Output Return Loss vs. Temperature
0 -2 RETURN LOSS (dB)
+25C +85C -40C
-4 -6 -8 -10 -12 -14 -16 -18 -20 6 8 10 12 14
+25C +85C -40C
16
18
20
22
24
26
28
FREQUENCY (GHz)
Noise Figure vs. Temperature [1]
6 5 NOISE FIGURE (dB) 4 3 2 1 0 6 8 10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
+25C +85C -40C
Output IP3 vs. Temperature
30
25
IP3 (dBm)
20
15
+25C +85C -40C
10
5 6 8 10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
[1] Board loss subtracted out.
F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC963LC4
v01.1210
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 26.5 GHz
Psat vs. Temperature
17
7
Amplifiers - low Noise - smT
P1dB vs. Temperature
15
+25C +85C -40C
13 P1dB (dBm)
15 P1dB (dBm)
+25C +85C -40C
11
13
9
11
7
9
5 6 8 10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
7 6 8 10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 6 8 10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
+25C +85C -40C
Power Compression @ 8 GHz
24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -4 -18
Pout Gain PAE
-15
-12
-9
-6
-3
0
INPUT POWER (dBm)
Power Compression @ 16 GHz
24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -4 -18
Pout Gain PAE
Power Compression @ 24 GHz
24 Pout (dBm), GAIN (dB), PAE (%) 20 16 12 8 4 0 -4 -18
Pout Gain PAE
-15
-12
-9
-6
-3
0
-15
-12
-9
-6
-3
0
INPUT POWER (dBm)
INPUT POWER (dBm)
7-3
F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC963LC4
v01.1210
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 26.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage rf input power Channel Temperature +4V 0 dBm 150 °C 0.52 w 125 °C/w -65 to +150 °C -40 to +85 °C Class 0
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