HMC965LP5E_11

HMC965LP5E GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Typical Applications The hmC965lp5e is ideal for: • Point-to-Point Radios v02.0711 Features saturated output power: +34 dBm @ 20% pAe high output ip3: +40 dBm high Gain: 27 dB DC supply: +6V @ 1200 mA no external matching required Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9 • Point-to-Multi-Point Radios • VSAT & SATCOM • Military & Space Functional Diagram General Description The hmC965lp5e is a 4 stage GaAs phemT mmiC 2 watt power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12.5 and 15.5 Ghz. The hmC965lp5e provides 27 dB of gain, +34 dBm of saturated output power, and 20% pAe from a +6V supply. The hmC965lp5e exhibits excellent linearity and is optimized for high capacity digital microwave radio. it is also ideal for 13.75 to 14.5 Ghz Ku Band VsAT transmitters as well as sATCom applications. The hmC965lp5e amplifier i/os are internally matched to 50 ohms and is packaged in a leadless Qfn 5x5 mm surface mount package and requires no external matching components. Electrical Specifications parameter frequency range Gain [3] Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3)[2] Total supply Current (idd) TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +6V, Idd = 1200 mA [1] min. Typ. 12.5 - 15.5 24 27 0.05 12 12 30 32 34 40 1200 max. Units Ghz dB dB/ °C dB dB dBm dBm dBm mA [1] Adjust Vgg between -2 to 0V to achieve idd = 1200mA typical. [2] measurement taken at +6V @ 1200 mA, pout / Tone = +22 dBm [3] Board loss subtracted out 3 9-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Broadband Gain & Return Loss vs. Frequency [1] 30 20 RESPONSE (dB) 10 0 -10 -20 -30 10 11 12 13 14 15 FREQUENCY (GHz) 16 17 18 22 Gain vs. Temperature [1] 38 +25C +85C -40C 34 S21 S11 S22 30 26 18 12 13 14 FREQUENCY (GHz) 15 16 Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -40C -4 RETURN LOSS (dB) -8 -12 -16 -20 12 13 14 FREQUENCY (GHz) 15 16 12 13 14 FREQUENCY (GHz) 15 16 P1dB vs. Temperature 38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16 P1dB vs. Supply Voltage 38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16 5V 6V P1dB (dBm) +25C +85C -40C [1] Board loss subtracted out For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com P1dB (dBm) 3 9-2 Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9 GAIN (dB) HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Psat vs. Temperature 38 Psat vs. Supply Voltage 38 Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9 36 Psat (dBm) Psat (dBm) +25C +85C -40C 36 34 34 32 32 30 30 5V 6V 28 12 13 14 FREQUENCY (GHz) 15 16 28 12 13 14 FREQUENCY (GHz) 15 16 P1dB vs. Supply Current (Idd) 38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16 1100 mA 1200 mA 1300 mA Psat vs. Supply Current (Idd) 38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16 1100 mA 1200 mA 1300 mA P1dB (dBm) Output IP3 vs. Temperature, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 +25C +85C -40C Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 1100 mA 1200 mA 1300 mA 3 9-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Psat (dBm) HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 5V 6V Output IM3 @ Vdd = +5V 80 70 60 IM3 (dBc) 50 40 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm) 13 GHz 14 GHz 15 GHz Output IM3 @ Vdd = +6V 80 70 60 IM3 (dBc) 50 40 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm) 13 GHz 14 GHz 15 GHz Power Compression @ 14 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -10 Pout Gain PAE -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) Detector Voltage Over Temperature 10 Reverse isolation vs. Temperature 0 -10 +25C +85C -40C ISOLATION (dB) Vref-Vdet (V) 1 12.5 GHz +25C 12.5 GHz +85C 12.5 GHz -55C 15.5 GHz +25C 15.5 GHz +85C 15.5 GHz -55C -20 -30 -40 -50 -60 -70 -80 0.1 0.01 -5 3 11 19 27 35 -90 11 12 13 14 15 16 17 FREQUENCY (GHz) OUTPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 9-4 Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9 HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Gain & Power vs. Supply Current @ 14 GHz 40 Gain & Power vs. Supply Voltage @ 14 GHz 50 Gain (dB), P1dB (dBm), Psat (dBm) 45 40 35 30 25 20 Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9 35 Gain P1dB Psat 30 25 GAIN P1dB Psat 20 15 1100 1150 1200 1250 1300 Idd (mA) 5 5.5 Vdd (V) 6 Power Dissipation 10 9 POWER DISSIPATION (W) 8 7 6 5 4 3 2 1 0 -10 -8 -6 -4 -2 0 2 4 6 8 Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 137 mw/°C above 85 °C) Thermal resistance (channel to ground paddle) storage Temperature operating Temperature esD sensitivity (hBm) +8V +24 dBm 150 °C 8.9 w 7.3 °C/w -65 to +150 °C -55 to +85 °C Class 1A Typical Supply Current vs. Vdd Vdd (V) +5.0 +6.0 idd (mA) 1200 1200 Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 1200 mA. eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 3 9-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Outline Drawing noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions Are in inChes [millimeTers] 3. leAD spACinG TolerAnCe is non-CUmUlATiVe. 4. pAD BUrr lenGTh shAll Be 0.15mm mAXimUm. pAD BUrr heiGhT shAll Be 0.05mm mAXimUm. 5. pACKAGe wArp shAll noT eXCeeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. refer To hiTTiTe AppliCATion noTe for sUGGesTeD lAnD pATTern. Package Information part number hmC965lp5e package Body material lead finish 100% matte sn msl rating msl1 [2] package marking [1] h965 XXXX rohs-compliant low stress injection molded plastic [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °C Pin Descriptions pin number 1 - 3, 6, 7, 10 - 12, 16, 22 - 24, 27, 32 4 5, 8, 14, 17, 20, 25, 31 function n/C Description These pins are not connected internally, however all data shown herein was measured with these pins connected to rf/DC ground externally. This pad is DC coupled and matched to 50 ohms. These pins and package bottom must be connected to rf/DC ground. interface schematic rfin GnD 9 Vgg1 Gate control for amplifier. external bypass capacitors of 100 pf, 10 nf and 4.7 uf are required. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 9-6 Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9 HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Pin Descriptions (continued) pin number function Vdd5, Vdd4, Vdd4, Vdd3, Vdd2, Vdd1 Description Drain bias voltage for the amplifier. external bypass capacitors of 100pf, 10nf and 4.7µf capacitors are required. pins 15 and 26 are connected internally Vdd4 may be applied to either pin 15 or pin 26 DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. DC voltage representing rf output power rectified by diode which is biased through an external resistor. interface schematic Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9 13, 15, 26, 28 - 30 18 Vref 19 Vdet 21 rfoUT This pin is DC coupled and matched to 50 ohms. Application Circuit 3 9-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Evaluation PCB List of Materials for Evaluation PCB EVAL01-HMC965LP5E item J1, J2, J5, J6 J3, J4 C1, C5 - C11 C12, C16 - C27 C23, C27 - C33 U1 pCB [2] Description K Connector, sri DC pin 100 pf Capacitor, 0402 pkg. 10 nf Capacitor, 0402 pkg. 4.7 µf Capacitor, Case A. hmC965lp5e power Amplifier 600-00048-00 evaluation pCB [1] [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon fr4 The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3 9-8 Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9