HMC968

HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Features saturated output power: +32 dBm @ 15% pAe high output ip3: +38 dBm high Gain: 21 dB DC supply: +6V @ 900 mA no external matching required Die size: 2.76 x 2.33 x 0.1 mm Typical Applications The hmC968 is ideal for: • point-to-point radios 3 Amplifiers - lineAr & power - Chip • point-to-multi-point radios • VsAT & sATCom • military & space Functional Diagram General Description The hmC968 is a 4 stage GaAs phemT mmiC 1 watt power Amplifier which operates between 40 and 43.5 Ghz. The hmC968 provides 21 dB of gain, +32 dBm of saturated output power, and 15% pAe from a +6V supply. with a very good ip3 performance of +38 dBm, the hmC968 is ideal for linear applications including point-to-point and point-to-multi-point radios. All data is taken with the chip in a 50 ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Electrical Specifications parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept Total supply Current (idd) (ip3)[2] TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +6V, Idd = 900 mA [1] min. Typ. 37 - 40 19 22 0.03 17 14 30.5 32 38 900 max. Units Ghz dB dB/ °C dB dB dBm dBm dBm mA [1] Adjust Vgg between -2 to 0V to achieve idd = 900 mA typical. [2] measurement taken at +6V @ 900 mA, pout / Tone = +20 dBm 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Broadband Gain & Return Loss vs. Frequency 30 20 RESPONSE (dB) 10 0 -10 -20 -30 35 36 37 38 39 40 FREQUENCY (GHz) 41 42 14 +25C +85C -55C Gain vs. Temperature 30 26 S21 S11 S22 GAIN (dB) 22 3 36 37 38 39 40 41 18 10 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 36 37 38 39 40 41 FREQUENCY (GHz) +25C +85C -55C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 36 37 38 39 40 41 FREQUENCY (GHz) +25C +85C -55C P1dB vs. Temperature 36 34 32 30 28 26 24 37 38 39 40 FREQUENCY (GHz) +25C +85C -55C P1dB vs. Supply Voltage 36 34 32 30 28 26 24 37 38 39 40 FREQUENCY (GHz) 5.0V 5.5V 6.0V P1dB (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com P1dB (dBm) 3-2 Amplifiers - lineAr & power - Chip HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Psat vs. Temperature 36 34 Psat vs. Supply Voltage 36 34 32 30 28 26 24 5.0V 5.5V 6.0V Psat (dBm) 30 28 26 24 37 38 39 40 FREQUENCY (GHz) +25C +85C -55C Amplifiers - lineAr & power - Chip Psat (dBm) 3 32 37 38 39 40 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 36 34 32 30 28 26 24 37 38 39 40 FREQUENCY (GHz) Psat vs. Supply Current (Idd) 36 34 32 30 28 26 24 37 38 39 40 FREQUENCY (GHz) 800mA 900mA 1000mA P1dB (dBm) 800mA 900mA 1000mA Output IP3 vs. Temperature, Pout/Tone = +20 dBm 45 Output IP3 vs. Supply Current, Pout/Tone = +20 dBm 45 40 IP3 (dBm) IP3 (dBm) Psat (dBm) 40 35 35 30 +25C +85C -55C 30 800mA 900mA 1000mA 25 37 38 39 40 FREQUENCY (GHz) 25 37 38 39 40 FREQUENCY (GHz) 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +20 dBm 45 Output IM3 @ Vdd = +5V 60 50 40 40 IP3 (dBm) 35 IM3 (dBc) 30 20 10 0 37 38 39 40 10 12 14 16 18 20 22 24 FREQUENCY (GHz) Pout/TONE (dBm) 37 GHz 38 GHz 39 GHz 40 GHz 3 Amplifiers - lineAr & power - Chip 3-4 30 5.0V 5.5V 6.0V 25 Output IM3 @ Vdd = +5.5V 60 50 40 IM3 (dBc) 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm) 37 GHz 38 GHz 39 GHz 40 GHz Output IM3 @ Vdd = +6V 60 50 40 IM3 (dBc) 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm) 37 GHz 38 GHz 39 GHz 40 GHz Power Compression @ 38 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 0 3 6 9 12 15 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 39 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 0 3 6 9 12 15 INPUT POWER (dBm) Pout Gain PAE For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Reverse isolation vs. Temperature 0 Gain (dB), P1dB (dBm), Psat (dBm) -10 ISOLATION (dB) Gain & Power vs. Supply Current @ 38 GHz 40 Gain P1dB Psat 3 Amplifiers - lineAr & power - Chip -20 -30 -40 -50 -60 36 37 38 +25C +85C -55C 35 30 25 20 15 39 40 41 800 900 1000 FREQUENCY (GHz) Idd (mA) Gain & Power vs. Supply Voltage @ 38 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) Gain P1dB Psat Power Dissipation 10 9 POWER DISSIPATION (W) 8 7 6 5 4 3 2 1 37GHz 38GHz 39GHz 40GHz 35 30 25 20 15 5 5.5 Vdd (V) 6 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 15.5 mw/°C above 85 °C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +7V +20 dBm 150 °C 6.45w 10.1 °C/w -65 to +150 °C -55 to +85 °C Typical Supply Current vs. Vdd Vdd (V) +5.0 +5.5 +6.0 idd (mA) 900 900 900 Note: Amplifier will operate over full voltage ranges shown above with Vgg adjusted to achieve Idd = 900 mA eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip 3-6 Die Packaging Information standard Gp-1 (Gel pack) [1] noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004” 3. TYpiCAl BonD pAD is 0.0026” [0.066] sQUAre 4. BACKsiDe meTAlliZATion: GolD 5. BonD pAD meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD. 7. ConneCTion noT reQUireD for UnlABeleD BonD pADs. 8. oVerAll Die siZe ± .002 Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Pad Descriptions pad number 1 function rfin Description This pad is AC coupled and matched to 50 ohms. interface schematic 3 Amplifiers - lineAr & power - Chip 2, 6 Vgg1 Gate control for amplifier. external bypass capacitors of 100 pf, 0.01 µf, and 4.7 µf are required on the pad that is used. 3, 5 Vdd1, Vdd2 Drain bias voltage for amplifier. external bypass capacitors of 100 pf, 0.01 µf and 4.7 µf are required on each pad. 4 Die Bottom rfoUT GnD This pad is AC coupled and matched to 50 ohms. Die bottom must be connected to rf/DC ground. Application Circuit 1 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Application Circuit 2 3 Amplifiers - lineAr & power - Chip For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-8 HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC968 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 3 - 10 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: follow esD precautions to protect against > ± 250V esD strikes. Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible