HMC970

HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Features high isolation: 40 dB Low insertion Loss: 1.2 dB All-Shunt Reflective topology high Linearity: +50 dBm input ip3 compact Die Size: 2.21 x 1.45 x 0.1 mm Typical Applications the hMc970 is ideal for: • telecom infrastructure • Microwave Radio & VSAt • Military Radios, Radar & ecM • Space Systems • test instrumentation Functional Diagram General Description the hMc970 is a broadband high isolation all-shunt high ip3 design, reflective piN SpDt MMic chip. covering 8 to 21 Ghz, the switch features 40 dB isolation and low 1.2 dB isolation loss. the hMc970 is capable of switching 2w of power from 8 to 21 Ghz. the hMc970 operates from a positive (30mA) supply current and a negative (-10V) supply voltage and includes on chip bias network, thus requiring no RF chokes to apply Dc bias. Bias control signals for the switch consists of a reverse bias voltage of -10V typical for ON state and a forward bias current of 30 mA for the OFF state. 7 SwitcheS - chip Electrical Specifications, TA = +25° C, With 30mA / -10V Control, 50 Ohm System parameter insertion Loss RFc to RF1 Frequency 8 - 12 Ghz 12 - 21 Ghz 8 - 14 Ghz 14 - 18 Ghz 18 - 21 Ghz 35 “On State” Min. typ. 1.1 1.3 0.9 1.2 1.4 40 10 34 50 Max. 1.4 1.7 1.2 1.6 1.7 Units dB dB dB dB dB dB dB dB dBm dBm insertion Loss RFc to RF2 isolation Return Loss input power for 1 dB compression input third Order intercept (two-tone input power= +16 dBm each tone, 1 Mhz tone Separation) 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Insertion Loss, RFC to RF1 0 -0.2 INSERTION LOSS (dB) INSERTION LOSS (dB) -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) +25C +85C -55C Isolation Loss, RFC to RF2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 6 8 10 12 14 16 18 20 22 24 +25C +85C -55C FREQUENCY (GHz) Isolation 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 6 8 10 12 14 16 18 20 22 24 FREQUENCY (GHz) RFC RF1 RF2 7 SwitcheS - chip 7-2 RFC/RF1 (RF2 ON) RFC/RF2 (RF1 ON) RF1/RF2 (RF1 ON) RF1/RF2 (RF2 ON) Insertion Loss vs. Pin, RFC to RF1 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 20 22 24 26 28 30 32 34 36 INPUT POWER (dBm) 12GHz 14GHz 16GHz Insertion Loss vs. Pin, RFC to RF2 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 20 22 24 26 28 30 32 34 36 INPUT POWER (dBm) 12GHz 14GHz 16GHz *isolation data taken with probe on the die For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz IP3 RFC to RF1 and RFC to RF2 70 RFC/RF1 RFC/RF2 Absolute Maximum Ratings RF input power Negative control Voltage Forward Bias current Storage temperature +34 dBm -14V 100 mA -65 to +150 °c -55 to +85 °c 60 IP3 (dBm) 50 Operating temperature 40 eLectROStAtic SeNSitiVe DeVice OBSeRVe hANDLiNG pRecAUtiONS 8 10 12 14 16 18 20 30 FREQUENCY (GHz) 7 SwitcheS - chip Control Voltages State 1 2 RFc - RF1 iL isol RFc - RF2 isol iL cNtL1 -10V +30mA / 1.29V cNtL2 +30mA / 1.29V -10V Equivalent Schematic 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Outline Drawing 7 SwitcheS - chip 7-4 Die Packaging Information Standard Gp-1 (Gel pack) [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOteS: 1. ALL DiMeNSiONS ARe iN iNcheS [MM] 2. Die thicKNeSS iS .004” 3. BAcKSiDe MetALiZAtiON: GOLD 4. BAcKSiDe MetAL iS GROUND 5. BOND pAD MetALiZAtiON: GOLD 6. NO cONNectiON ReQUiReD FOR UNLABeLeD BOND pADS. 7. OVeRALL Die SiZe ±.002” For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Pad Descriptions pad Number Function Description interface Schematic 1 RFc RF common port. this port is Dc shorted to ground through an on-chip inductor. 2 RF1 RF Output port (path1) contains Dc control voltage and also may be connected to the external Dc bias through an RF choke. RF Output port (path2) contains Dc control voltage and also may be connected to the external Dc bias through an RF choke. 3 RF2 4 cNtL1 Dc control input for port 1. 7 SwitcheS - chip 5 ctRL2 Dc control input for port 2. Assembly Diagram 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hMc general handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based eSD protective containers, and then sealed in an eSD protective bag for shipment. Once the sealed eSD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. DO NOt attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow eSD precautions to protect against eSD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond 7 SwitcheS - chip 7-6 RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting the chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (Dc bias, iF1 and iF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. thermosonic wirebonding with a nominal stage temperature of 150 °c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible