HMC971

HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Features high isolation: 40 dB Low insertion Loss: 1.6 dB high Linearity: +43 dBm input ip3 high power handling: +34 dBm input p1dB Die Size: 2.21 x 1.26 x 0.1 mm Typical Applications the hMc971 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military Radios, Radar & ECM • Space Systems • Test Instrumentation Functional Diagram General Description the hMc971 is a broadband high isolation piN SpDt MMic chip. covering 18 to 40 Ghz, the switch features >55 dB isolation at lower frequencies and >45 dB at higher frequencies. the switch operates using complementary negative control voltage logic lines of 0/-10V. All data is measured with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). 7 SwitcheS - chip Electrical Specifications, TA = +25 °C, With 0/-10V Control, 50 Ohm System parameter Insertion Loss RFC to RF1 Frequency 18 - 28 Ghz 28 - 32 Ghz 32 - 40 Ghz 18 - 28 Ghz 28 - 32 Ghz 32 - 40 Ghz 34 “On State” 18 - 30 Ghz 30 - 40 Ghz Min. typ. 1.0 1.3 1.5 1.0 1.3 1.5 40 17 12 34 43 Max. 1.3 1.7 1.9 1.3 1.7 1.9 Units dB dB dB dB dB dB dB dB dB dBm dBm Insertion Loss RFC to RF2 isolation Return Loss input power for 1 dB compression input third Order intercept (two-tone input power= +7 dBm each tone, 1 Mhz tone Separation) 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Insertion Loss, RFC to RF1 0 +25C +85C -55C Isolation Loss, RFC to RF2 0 +25C +85C -55C INSERTION LOSS (dB) INSERTION LOSS (dB) -0.6 -0.6 -1.2 -1.2 -1.8 -1.8 -2.4 -2.4 -3 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 FREQUENCY (GHz) -3 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 FREQUENCY (GHz) Isolation 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 FREQUENCY (GHz) RFC/RF1 RFC/RF2 RF1/RF2 RF1 on RF1/RF2 RF2 on Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 FREQUENCY (GHz) RFC RF1 RF2 7 SwitcheS - chip 7-2 Insertion Loss vs. Pin, RFC to RF1, F = 25 GHz 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 20 22 24 26 28 30 32 34 INPUT POWER (dBm) Insertion Loss vs. Pin, RFC to RF2, F = 25 GHz 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 20 22 24 26 28 30 32 34 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz IP3 RFC to RF1 and RFC to RF2 70 RFC/RF1 RFC/RF2 Absolute Maximum Ratings RF Input Power Negative control Voltage positive Bias current Storage temperature 35 dBm -15 V 80 mA -65 to +150 °c -55 to +85 °c 60 IP3 (dBm) 50 Operating temperature 40 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 20 22 24 26 28 30 32 34 36 38 40 30 FREQUENCY (GHz) 7 SwitcheS - chip Control Voltages State 1 2 RFC - RF1 iL isol RFC - RF2 isol iL cNtL1 -10V +30mA / 1.29V cNtL2 +30mA / 1.29V -10V [Note 1] Diodes are reversed biased for the insertion path. [Note 2] Diodes are forward biased for the isolation path. the forward voltage across the diodes is 1.29V. Equivalent Schematic 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Outline Drawing 7 SwitcheS - chip 7-4 Die Packaging Information [1] Standard Gp-2 (Gel pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOteS: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. Die thicKNeSS iS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BAcKSiDe MetALiZAtiON: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND pAD MetALiZAtiON: GOLD 7. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS. 8. OVERALL DIE SIZE ±.002” For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Pad Descriptions pad Number Function Description RF signal contains DC control voltage.. External DC blocking capacitor is required. interface Schematic 1 RF1 2 RFC RF common port, this port is AC coupled. 3 RF2 RF signal contains DC control voltage. External DC blocking capacitor is required. 4 cNtL1 Switch control input, see “control Voltages” table. 7 SwitcheS - chip 5 cNtL2 Switch control input, see “control Voltage” table. Assembly Diagram 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hMc general handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based eSD protective containers, and then sealed in an eSD protective bag for shipment. Once the sealed eSD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. DO NOt attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow eSD precautions to protect against eSD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond 7 SwitcheS - chip 7-6 RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting the chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. thermosonic wirebonding with a nominal stage temperature of 150 °c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible