HMC975

HMC975 v00.0111 PIN MMIC HIGH ISOLATION SPDT SWITCH, 2 - 50 GHz Features high isolation: 45 dB @ 26 Ghz Low insertion Loss: 0.9 dB @ 26 Ghz Series-Shunt Reflective Topology Die Size: 1.75 x 1.1 x 0.1 mm Typical Applications the hMc975 is ideal for: • telecom infrastructure • Microwave Radio & VSAt • Military Radios, Radar & ecM • Space Systems • test instrumentation Functional Diagram General Description the hMc975 is a broadband high isolation series shunt reflective piN SpDt MMic chip. covering 2 to 50 Ghz, the switch features 45 dB isolation and 0.9 dB insertion loss at 26 Ghz. the hMc975 is capable of switching 1/2w of power from 12 to 50 Ghz. the hMc975 operates from a positive (30mA) supply current and a negative (-10V) supply voltage. Bias control signals for the switch consists of a reverse bias voltage of -10V typical for ON state and a forward bias current of 30 mA for the OFF state. 7 SwitcheS - chip Electrical Specifications, TA = +25° C, With 30mA / -10V Control, 50 Ohm System parameter Frequency 2 - 15 Ghz 15 - 30 Ghz 30 - 40 Ghz 40 - 50 Ghz 2 - 15 Ghz 15 - 30 Ghz 30 - 40 Ghz 40 - 50 Ghz 2 - 15 Ghz 15 - 50 Ghz “On State” 2 - 15 Ghz 15 - 50 Ghz 2 - 6 G hz 6 - 12 Ghz 12 - 50 Ghz 35 35 Min. typ. 0.6 0.9 1.6 1.7 0.5 0.8 1.5 1.7 50 45 20 12 20 26 28 Max. 1.0 1.3 2.0 2.1 0.9 1.2 1.9 2.1 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm insertion Loss RFc to RF1 insertion Loss RFc to RF2 isolation Return Loss input power for 1 dB compression 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC975 v00.0111 PIN MMIC HIGH ISOLATION SPDT SWITCH, 2 - 50 GHz Insertion Loss, RFC to RF1 0 Insertion Loss, RFC to RF2 0 INSERTION LOSS (dB) INSERTION LOSS (dB) -1 -1 -2 +25C +85C -55C -2 +25C +85C -55C -3 -3 -4 -4 -5 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) -5 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Isolation 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) RFC/RF1 RFC/RF2 RF1/RF2 RF1 on RF1/RF2 RF2 on Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) RFC RF1 RF2 7 SwitcheS - chip 7-2 Insertion Loss vs. Pin 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 15 17 19 21 23 25 27 INPUT POWER (dBm) 2 GHz 4 GHz 6 GHz 12 GHz 16 GHz *isolation data taken with probe on the die For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC975 v00.0111 PIN MMIC HIGH ISOLATION SPDT SWITCH, 2 - 50 GHz Absolute Maximum Ratings RF input power Negative control Voltage Forward Bias current Storage temperature Operating temperature 23 dBm (2 - 6 Ghz) 30 dBm (6 - 50 Ghz) -15V 80 mA -65 to +150 °c -55 to +85 °c eLectROStAtic SeNSitiVe DeVice OBSeRVe hANDLiNG pRecAUtiONS 7 SwitcheS - chip Control Voltages State 1 2 RFc - RF1 iL isol RFc - RF2 isol iL cNtL1 -10V +30mA / 1.29V cNtL 2 +30mA / 1.29V -10V Equivalent Schematic 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC975 v00.0111 PIN MMIC HIGH ISOLATION SPDT SWITCH, 2 - 50 GHz Outline Drawing 7 SwitcheS - chip 7-4 Die Packaging Information Standard Gp-2 (Gel pack) [1] Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOteS: 1. ALL DiMeNSiONS ARe iN iNcheS [MM] 2. Die thicKNeSS iS .004” 3. t YpicAL BOND pAD iS .004” SQUARe 4. BAcKSiDe MetALiZ AtiON: GOLD 5. BAcKSiDe MetAL iS GROUND 6. BOND pAD MetALiZ AtiON: GOLD 7. NO cONNectiON ReQUiReD FOR UNLABLeD BOND pADS. 8. OVeR ALL Die SiZe ±.002” Pad Descriptions pad Number 1 Function RF1 Description RF output signal (path1). ex ternal Dc bias through RF choke is required. RF input signal. ex ternal dropping resistor to ground through the RF choke is required. RF output signal (path2). ex ternal Dc bias through RF choke is required. interface Schematic 2 RFc 3 RF2 Die Bottom GND Die bottom must be connected to RF/Dc ground. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC975 v00.0111 PIN MMIC HIGH ISOLATION SPDT SWITCH, 2 - 50 GHz Assembly Diagram 7 SwitcheS - chip 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC975 v00.0111 PIN MMIC HIGH ISOLATION SPDT SWITCH, 2 - 50 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hMc general handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based eSD protective containers, and then sealed in an eSD protective bag for shipment. Once the sealed eSD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. DO NOt attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow eSD precautions to protect against eSD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond 7 SwitcheS - chip 7-6 RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting the chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (Dc bias, iF1 and iF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. thermosonic wirebonding with a nominal stage temperature of 150 °c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible