HMC985

HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz 0 attenuators - analog - Chip typical applications the hMC985 is ideal for: • point-to-point radio • Vsat radio • test instrumentation • Microwave sensors • Military, eCM & radar Features Wide Bandwidth: 20 - 50 ghz excellent linearity: +32 dB input ip3 Wide attenuation range: 35 dB Die size: 2.78 x 1.37 x 0.1 mm General Description the hMC985 is an absorptive Voltage Variable attenuator (VVa) which operates from 20 - 50 ghz and is ideal in designs where an analog DC control signal must be used to control rF signal levels over a 35 dB dynamic range. it features two shunt-type attenuators which are controlled by two analog voltages, Vctrl1 and Vctrl2. optimum linearity performance of the attenuator is achieved by first varying Vctrl1 of the first attenuation stage from -3V to 0V with Vctrl2 fixed at -3V. the control voltage of the second attenuation stage, Vctrl2, should then be varied from -3V to 0V with Vctrl1 fixed at 0V. however, if the Vctrl1 and Vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input ip3 performance. applications include agC circuits and temperature compensation of multiple gain stages in microwave point to point and Vsat radios. Functional Diagram electrical Specifications, ta = +25 °c, See test conditions parameter Condition 20 - 27 insertion loss 27 - 35 35 - 50 20 - 27 at tenuation range 27 - 35 35 - 50 input return loss output return loss input third order intercept (two-tone input power = 10 dBm each tone) [1] [1] VCtr2 = -3, VCtr1 = -2.0 worst case 25 30 35 Min. typ. 3 3 3.5 30 35 40 13 13 33 Max. 3.5 4 4.5 units dB dB dB dB dB dB dB dB dBm 0-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz attenuation vs. Frequency over vcntl = variable, vcntrl2 = -3v 0 -5 ATTENUATION (dB) ATTENUATION (dB) attenuation vs. Frequency over vcntl1 = 0v, vctrl2 = variable 0 -10 -20 -30 -40 -50 -60 -70 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V 0 attenuators - analog - Chip 0-2 -10 -15 -20 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V -25 20 25 30 35 40 45 50 FREQUENCY (GHz) 20 25 30 35 40 45 50 FREQUENCY (GHz) attenuation vs. vcnrl1 over temperature @ 30 GHz, vctrl2 = -3v 0 attenuation vs. vcntrl2 over temperature @ 30 GHz, vctrl1 = 0v 0 -5 -3 ATTENUATION (dB) ATTENUATION (dB) +25C +85C -55C -10 -15 -20 -25 -30 -35 -40 +25C +85C -55C -6 -9 -12 -15 -2.4 -2 -1.6 -1.2 Vctrl1 (V) -0.8 -0.4 0 -45 -2.4 -2 -1.6 -1.2 Vctrl1 (V) -0.8 -0.4 0 attenuation vs. Pin @ 30 GHz vctrl1 = variable, vctrl2 = -3v 0 -4 ATTENUATION (dB) -8 -12 -16 -20 -24 0 3 6 9 12 15 18 21 24 INPUT POWER (dBm) -2.4 V -2.0 V -1.6V -1.2V -0.8 V -0.4V 0.0 V attenuation vs. Pin @ 30 GHz vctrl2 = variable, vctrl1 = 0v 0 -2.4 V -2.0 V -1.6V -1.2V -0.8 V -0.4V 0.0 V -10 ATTENUATION (dB) -20 -30 -40 -50 0 3 6 9 12 15 18 21 24 INPUT POWER (dBm) F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz 0 attenuators - analog - Chip input return loss vctrl1 = variable, vctrl2 = -3v 0 input return loss vctrl1 = 0v, vctrl2 = variable 0 RETURN LOSS (dB) -20 RETURN LOSS (dB) -10 -10 -20 -30 -2.4V -1.2V 0.0V -30 -2.4V -1.2V 0.0V -40 20 25 30 35 40 45 50 FREQUENCY (GHz) -40 20 25 30 35 40 45 50 FREQUENCY (GHz) output return loss vctrl1 = variable, vctrl2 = -3v 0 output return loss vctrl1 = 0v, vctrl2 = variable 0 RETURN LOSS (dB) -20 RETURN LOSS (dB) -10 -10 -20 -30 -2.4V -1.2V 0.0V -30 -2.4V -1.2V 0.0V -40 20 25 30 35 40 45 50 FREQUENCY (GHz) -40 20 25 30 35 40 45 50 FREQUENCY (GHz) input iP3 vs. input Power @ 30 GHz vctrl1 = variable, vctrl2 = -3v 60 input iP3 vs. input Power @ 30 GHz vctrl1 = -2v, vctrl2 = -3v [1] 40 50 38 IP3 (dBm) 30 IP3 (dBm) 40 36 20 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V 34 32 20 GHz 30 GHz 40 GHz 10 0 4 8 12 16 20 SINGLE TONE INPUT POWER (dBm) 30 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) [1] Worst Case ip3 0-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz input iP3 vs. input Power over temperature @ 30 GHz, vctrl1 = -2v, vctrl2 = -3v [1] 40 input iP3 vs. input Power @ 30 GHz vctrl2 = variable, vctrl1 = 0v 60 0 attenuators - analog - Chip 0-4 38 50 IP3 (dBm) 34 IP3 (dBm) 36 40 +25 C +85 C -55 C 30 32 20 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V 30 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) 10 0 4 8 12 16 20 SINGLE TONE INPUT POWER (dBm) input iP3 vs. input Power over Frequency vctrl2 = -2v, vctrl1 = 0v [1] 45 20 GHz 30 GHz 40 GHz input iP3 vs input Power over temperature @ 30 GHz, vctrl2 = -2v, vctrl1 = 0v [1] 45 43 43 IP3 (dBm) 39 IP3 (dBm) 41 41 39 +25 C +85 C -55 C 37 37 35 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) 35 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) [1] Worst Case ip3 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz 0 attenuators - analog - Chip attenuation vs Frequency over vctrl vctrl1 = vctrl2 0 -10 ATTENUATION (dB) attenuation vs. vctrl over temperature @ 35 GHz, vctrl1 = vctrl2 0 -5 -10 ATTENUATION (dB) +25C +85C -55C -20 -30 -40 -50 -60 -70 20 25 30 35 40 45 50 FREQUENCY (GHz) -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V -15 -20 -25 -30 -35 -40 -45 -2.4 -2 -1.6 -1.2 Vctrl1 (V) -0.8 -0.4 0 attenuation vs. Pin @ 30 GHz over vctrl vctrl1 = vctrl2 0 -10 ATTENUATION (dB) -20 -30 -40 -50 -60 0 3 6 9 12 15 18 21 24 INPUT POWER (dBm) -2.4 V -2.0 V -1.6V -1.2V -0.8 V -0.4V 0.0 V input return loss, vctrl1 = vctrl2 0 RETURN LOSS (dB) -10 -20 -30 -2.4V -1.2V 0.0V -40 20 25 30 35 40 45 50 FREQUENCY (GHz) output return loss, vctrl1 = vctrl2 0 input iP3 vs. input Power over vctrl @ 30 GHz, vctrl1 = vctrl2 60 RETURN LOSS (dB) -10 IP3 (dBm) 50 40 -20 30 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V -30 -2.4V -1.2V 0.0V 20 -40 20 25 30 35 40 45 50 FREQUENCY (GHz) 10 0 4 8 12 16 20 SINGLE TONE INPUT POWER (dBm) 0-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz input iP3 vs. input Power over Frequency vctrl1 = vctrl2 35 20 GHz 30 GHz 40 GHz input iP3 vs. input Power over temperature @ 30 GHz vctrl1 = vctrl2 35 0 attenuators - analog - Chip 0-6 33 33 IP3 (dBm) IP3 (dBm) 31 31 29 29 +25 C +85 C -55 C 27 27 25 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) 25 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz 0 attenuators - analog - Chip absolute maximum ratings Control Voltage input rF power Maximum Junction temperature thermal resistance (rth) (junction to ground paddle) operating temperature storage temperature +1 to -5V 30 dBm 165 °C 62 °C/W -40°C to +85°C -65°C to 125°C eleCtrostatiC sensitiVe DeViCe oBserVe hanDling preCautions outline Drawing Die Packaging information [1] standard gp-1 (gel pack) alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. notes: 1. all DiMensions are in inChes [MM] 2. Die thiCKness is .004” 3. t YpiCal BonD paD is 0.0026” [0.066] sQuare 4. BaCKsiDe MetalliZ ation: golD 5. BonD paD MetalliZ ation: golD 6. BaCKsiDe Metal is grounD. 7. ConneCtion not reQuireD For unlaBeleD BonD paDs. 8. oVerall Die siZe ± .002 0-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz Pad Descriptions pad number Function Description pin schematic 0 r Fi n this pad is DC coupled and matched to 50 ohms 1 2 rFout this pad is DC coupled and matched to 50 ohms 3 Vctrl1 Control Voltage 1 4 Vctrl2 Control Voltage 2 Die Bottom gnD Die bottom must be connected to rF/DC ground assembly Diagram F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-8 attenuators - analog - Chip HMC985 v00.0211 Gaas mmic voltaGe - variable attenuator, 20 - 50 GHz 0 attenuators - analog - Chip mounting & bonding techniques for millimeterwave Gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hMC general handling, Mounting, Bonding note). 50 ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recommended for bringing rF to and from the chip (Figure 1). if 0.254 mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150 mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076 mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: all bare die are placed in either Waffle or gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do not attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow esD precautions to protect against > ± 250V esD strikes. Transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and flat. eutectic Die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do not expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible