HMC994_1110

HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Features high p1dB output power: 28 dBm high psat output power: 30 dBm high Gain: 14 dB high output ip3: 36 dBm supply Voltage: +10 V @ 250 mA 50 ohm matched input/output Die size: 2.82 x 1.5 x 0.1 mm Typical Applications The hmC994 is ideal for: • Test instrumentation • microwave radio & VsAT • military & space • Telecom infrastructure 3 Amplifiers - lineAr & power - Chip • fiber optics Functional Diagram General Description The hmC994 is a GaAs mmiC phemT Distributed power Amplifier which operates between DC and 30 Ghz. The amplifier provides 14 dB of gain, 36 dBm output ip3 and +28 dBm of output power at 1 dB gain compression while requiring 250 mA from a +10 V supply. The hmC994 exhibits a slightly positive gain slope from 5 to 25 Ghz, making it ideal for ew, eCm, radar and test equipment applications. The hmC994 amplifier i/os are internally matched to 50 ohms facilitating integration into mutli-Chip-modules (mCms). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 250 mA* parameter frequency range Gain Gain flatness Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure supply Current (idd) (Vdd= 10V, Vgg1= -0.6V Typ.) 26 11.5 min. Typ. DC - 18 13.5 ±0.25 0.011 18 20 28 29 38 3.5 250 25 12 max. min. Typ. 18 - 26 14 ±0.15 0.017 18 16 27 29 34 4 250 24 11.5 max. min. Typ. 26 - 30 14 ±0.4 0.02 16 14 26.5 28 33 4.5 250 max. Units Ghz dB dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2 to 0 V to achieve Idd = 250 mA typical. 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Gain vs. Temperature 18 16 Gain & Return Loss 20 10 RESPONSE (dB) 0 -10 -20 -30 -40 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) S21 S11 S22 14 GAIN (dB) 12 10 8 6 0 5 10 15 20 25 30 FREQUENCY (GHz) 3 +25C +85C -55C Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) -20 RETURN LOSS (dB) -10 -10 +25C +85C -55C -20 -30 +25C +85C -55C -30 -40 0 5 10 15 20 25 30 FREQUENCY (GHz) -40 0 5 10 15 20 25 30 FREQUENCY (GHz) Noise Figure vs. Temperature 10 +25C +85C -55C P1dB vs. Temperature 32 30 28 26 24 +25C +85C -55C 8 NOISE FIGURE (dB) 6 4 2 P1dB (dBm) 22 20 0 5 10 15 20 25 30 0 5 10 15 20 25 30 FREQUENCY (GHz) FREQUENCY (GHz) 0 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-2 Amplifiers - lineAr & power - Chip HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Psat vs. Temperature 32 30 28 26 24 22 20 +25C +85C -55C P1dB vs. Supply Voltage 32 30 P1dB (dBm) 26 24 22 20 0 5 10 15 20 25 30 FREQUENCY (GHz) Amplifiers - lineAr & power - Chip +8V +10V +11V Psat (dBm) 3 28 0 5 10 15 20 25 30 FREQUENCY (GHz) Psat vs. Supply Voltage 32 30 28 26 24 22 20 0 5 10 15 20 25 30 FREQUENCY (GHz) Output IP3 vs. Temperature @ Pout = 16 dBm / Tone 44 42 40 +25C +85C -55C Psat (dBm) IP3 (dBm) +8V +10V +11V 38 36 34 32 30 28 0 5 10 15 20 25 30 FREQUENCY (GHz) Output IP3 vs. Supply Voltage @ Pout = 16 dBm / Tone 44 42 40 +8V +10V +11V Output IM3 @ Vdd = +8V 90 80 70 60 IM3 (dBc) 50 40 30 20 10 0 2 GHz 6 GHz 10 GHz 14 GHz 18 GHz 22 GHz 26 GHz 30 GHz IP3 (dBm) 38 36 34 32 30 28 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) Pout/TONE (dBm) 3-3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Output IM3 @ Vdd = +11V 90 80 70 60 IM3 (dBc) 50 40 Output IM3 @ Vdd = +10V 90 80 70 60 IM3 (dBc) 50 40 30 20 10 0 2 4 6 8 10 12 14 16 18 20 Pout/TONE (dBm) 2 GHz 6 GHz 10 GHz 14 GHz 18 GHz 22 GHz 26 GHz 30 GHz 3 2 GHz 6 GHz 10 GHz 14 GHz 18 GHz 22 GHz 26 GHz 30 GHz 20 10 0 2 4 6 8 10 12 14 16 18 20 Pout/TONE (dBm) Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 4 8 12 16 20 24 28 32 36 40 44 FREQUENCY (GHz) +25C +85C -55C Power Compression @ 16 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 3 6 9 12 15 18 INPUT POWER (dBm) Pout Gain PAE Gain & Power vs. Supply Voltage @ 16 GHz 35 Power Dissipation 3 Gain (dB), P1dB (dBm), Psat (dBm) 30 POWER DISSIPATION (W) 2 25 Gain P1dB Psat 20 1 15 4 GHz 8 GHz 12 GHz 16 GHz 20 GHz 24 GHz 28 GHz 10 8 9 10 11 0 0 3 6 9 12 15 18 Vdd (V) INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 3-4 Amplifiers - lineAr & power - Chip 30 HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Second Harmonics vs. Vdd @ Pout = 14 dBm 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 +8V +10V +11V Second Harmonics vs. Temperature @ Pout = 14 dBm 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +25C +85C -55C 3 Amplifiers - lineAr & power - Chip 0 4 8 12 16 20 24 FREQUENCY(GHz) Second Harmonics vs. Pout 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +4 dBm +6 dBm +8 dBm +10 dBm +12 dBm +14 dBm +16 dBm Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) 12V -3 to 0 Vdc for Vdd = 12V, Vgg2 = 5.5V idd < 200mA Gate Bias Voltage (Vgg2) for Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) up to 4.5V for Vdd < 8.5V, Vgg2 must remain > 2V rf input power (rfin) Channel Temperature 25 dBm 150 °C output power into Vswr >7:1 storage Temperature operating Temperature 28 dBm -65 to 150 °C -55 to 85 °C eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions Typical Supply Current vs. Vdd Vdd (V) +8 +10 +11 idd (mA) 250 250 250 Continuous pdiss (T= 85 °C) 3.02 w (derate 46.6 mw/°C above 85 °C) Thermal resistance (channel to die bottom) 21.4 °C/w 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Outline Drawing 3 Amplifiers - lineAr & power - Chip 3-6 Die Packaging Information standard Gp-1 (Gel pack) [1] noTes: 1. All Dimensions in inChes [millimeTers] 2. Die ThiCKness is 0.004 (0.100) 3. TYpiCAl BonD pAD is 0.004 (0.100) sQUAre 4. BonD pAD meTAliZATion: GolD 5. BACKsiDe meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD 7. no ConneCTion reQUireD for UnlABeleD BonD pADs 8. oVerAll Die siZe is ±.002 Alternate [2] [1] Refer to the “Packaging Information” section on our website for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Pad Descriptions pad number function Description This pad is DC coupled and matched to 50 ohms. Blocking capacitor is required. interface schematic 3 Amplifiers - lineAr & power - Chip 1 rfin 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. for nominal operation +3.5V should be applied to Vgg2. low frequency termination. Attach bypass capacitor per application circuit herein. low frequency termination. Attach bypass capacitor per application circuit herein. rf output for amplifier. Connect DC bias (Vdd) network to provide drain current (idd). see application circuit herein. 4, 7 ACG2, ACG4 3 ACG1 5 rfoUT & VDD 6 ACG3 low frequency termination. Attach bypass capacitors per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. please follow “mmiC Amplifier Biasing procedure” application note. Die Bottom GnD Die bottom must be connected to rf/DC ground. 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Application Circuit 3 Amplifiers - lineAr & power - Chip 3-8 NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500 mA. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Assembly Diagram 3 Amplifiers - lineAr & power - Chip 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC994 v02.1011 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) 3 Amplifiers - lineAr & power - Chip 3 - 10 RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding rf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com