HMC995LP5GE

HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Typical Applications The HmC995lp5Ge is ideal for: Features intergrated power Detector saturated output power: 35.5 dBm @ 24% pAe High output ip3: 41 dBm High Gain: 27 dB DC supply: +5V to +7V @ 1200 mA no external matching required Amplifiers - lineAr & power - smT • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT & SATCOM • Military & Space Functional Diagram General Description The HmC995lp5Ge is a 4 stage GaAs pHemT mmiC 2 watt power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12 and 16 GHz. The HmC995lp5Ge provides 27 dB of gain, 35.5 dBm of saturated output power, and 24% pAe from a +7V supply. The HmC995lp5Ge exhibits excellent linearity and is optimized for high capacity digital microwave radio. it is also ideal for 13.75 to 14.5 GHz Ku Band VsAT transmitters as well as sATCom applications. The HmC995lp5Ge amplifier i/os are internally matched to 50 ohms and is packaged in a leadless Qfn 5x5 mm surface mount package and requires no external matching components. Electrical Specifications parameter frequency range Gain [3] Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3)[2] Total supply Current (idd) TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200 mA [1] min. Typ. 12 - 16 24 27 0.03 9 15 32 34.5 35.5 41 1200 max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA [1] Adjust (Vgg1=Vgg2=Vgg3) between -2 to 0V to achieve idd = 1200mA typical. [2] measurement taken at +7V @ 1200mA, pout / Tone = +22 dBm [3] Board loss subtracted out 0-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Broadband Gain & Return Loss vs. Frequency 35 25 RESPONSE (dB) 15 5 -5 -15 -25 10 11 12 13 14 15 FREQUENCY (GHz) 16 17 18 22 Gain vs. Temperature [1] 38 +25C +85C -40C 34 S21 S11 S22 30 26 18 12 13 14 FREQUENCY (GHz) 15 16 Input Return Loss vs. Temperature 0 +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 +25C +85C -40C -5 RETURN LOSS (dB) -10 -15 -20 -25 12 13 14 FREQUENCY (GHz) 15 16 12 13 14 FREQUENCY (GHz) 15 16 P1dB vs. Temperature 40 38 36 34 32 30 28 12 13 14 FREQUENCY (GHz) 15 16 +25C +85C -40C P1dB vs. Supply Voltage 40 38 36 34 32 30 28 12 13 14 FREQUENCY (GHz) 15 16 5V 6V 7V P1dB (dBm) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com P1dB (dBm) 0-2 Amplifiers - lineAr & power - smT GAIN (dB) HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Psat vs. Temperature 40 Psat vs. Supply Voltage 40 38 36 34 32 +25C +85C -40C 5V 6V 7V Amplifiers - lineAr & power - smT 38 36 34 32 30 28 12 13 14 FREQUENCY (GHz) 15 16 Psat (dBm) Psat (dBm) 30 28 12 13 14 FREQUENCY (GHz) 15 16 P1dB vs. Supply Current (Idd) 40 38 36 34 32 30 28 12 13 14 FREQUENCY (GHz) 15 16 1000 mA 1100 mA 1200 mA Psat vs. Supply Current (Idd) 40 38 36 Psat(dBm) 34 32 30 28 12 13 14 FREQUENCY (GHz) 15 16 1000 mA 1100 mA 1200 mA Output IP3 vs. Temperature, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 +25C +85C -40C P1dB (dBm) Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 1000 mA 1100 mA 1200 mA 0-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm 48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16 5V 6V 7V Output IM3 @ Vdd = +5V 80 60 IM3 (dBc) 50 40 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm) Output IM3 @ Vdd = +6V 80 70 60 IM3 (dBc) Output IM3 @ Vdd = +7V 80 70 60 IM3 (dBc) 50 40 30 20 10 0 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 50 40 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm) 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 10 12 14 16 18 20 22 24 Pout/TONE (dBm) Power Compression @ 13 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -10 Pout Gain PAE Power Compression @ 15 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -10 Pout Gain PAE -8 -6 -4 -2 0 2 4 6 8 10 12 14 -8 -6 -4 -2 0 2 4 6 8 10 12 14 INPUT POWER (dBm) INPUT POWER (dBm) F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-4 Amplifiers - lineAr & power - smT 70 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Detector Voltage vs. Frequency & Temperature 10 Reverse isolation vs. Temperature 0 -10 +25C +85C -40C Amplifiers - lineAr & power - smT Vref-Vdet (V) 1 ISOLATION (dB) 19 27 35 12.5 GHz +25C 12.5 GHz +85C 12.5 GHz -40C 15.5 GHz +25C 15.5 GHz +85C 15.5 GHz -40C -20 -30 -40 -50 -60 -70 -80 0.1 0.01 -5 3 11 -90 11 12 13 14 15 16 17 FREQUENCY (GHz) OUTPUT POWER (dBm) Gain & Power vs. Supply Current @ 14 GHz 40 Gain & Power vs. Supply Voltage @ 14 GHz 50 Gain (dB), P1dB (dBm), Psat (dBm) 45 40 35 30 25 20 Gain (dB), P1dB (dBm), Psat (dBm) 35 GAIN P1dB Psat 30 25 GAIN P1dB Psat 20 15 1000 1050 1100 1150 1200 Idd (mA) 5 5.5 6 Vdd (V) 6.5 7 Power Dissipation 12 10 8 6 4 2 0 -10 13 GHz 14 GHz 15 GHz POWER DISSIPATION (W) -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) 0-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1-5) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 137 mw/°C above 85 °C) Thermal resistance (channel to gnd paddle) storage Temperature operating Temperature esD sensitivity (HBm) +8V +24 dBm 150 °C 8.9 w 7.3 °C/w -65 to +150 °C -40 to +85 °C Class 1A Typical Supply Current vs. Vdd Vdd (V) 5 6 7 idd (mA) 1200 1200 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1200 mA eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-6 Amplifiers - lineAr & power - smT 1200 HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Outline Drawing Amplifiers - lineAr & power - smT noTes: 1. pACKAGe BoDY mATeriAl: AlUminA 2. leAD AnD GroUnD pADDle plATinG: 30-80 miCroinCHes GolD oVer 50 miCroinCHes minimUm niCKel. 3. Dimensions Are in inCHes [millimeTers]. 4. leAD spACinG TolerAnCe is non-CUmUlATiVe 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm DATUm -C6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. Package Information part number HmC995lp5Ge package Body material roHs-compliant low stress injection molded plastic lead finish 100% matte sn msl rating msl3 [2] package marking [1] H995 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °C 0-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Pin Descriptions pin number 1-3, 9, 14 17-19, 23, 24 function n/C Description These pins are not connected internally, however all data shown herein was measured with these pins connected to rf/DC ground externally. interface schematic 4 rfin This pad is DC coupled and matched to 50 ohms. 5, 15 GnD These pins and package bottom must be connected to rf/DC ground. 6-8 Vgg1, Vgg2 Vgg3 Gate control for amplifier. external bypass capacitors of 100pf, 10nf and 4.7uf are required. please follow “mmiC Amplifier Biasing proceedure” App note. 10, 11 20-22 Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 Drain bias voltage for the amplifier. external bypass capacitors of 100pf, 10nf and 4.7µf capacitors are required. 12 Vref DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. see Application Circuit. DC voltage representing rf output power rectified by diode which is biased through an external resistor. see Appilation Circuit. 13 Vdet 16 rfoUT This pin is DC coupled and matched to 50 ohms. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-8 Amplifiers - lineAr & power - smT HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Application Circuit Amplifiers - lineAr & power - smT 0-9 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Evaluation PCB List of Materials for Evaluation PCB EVAL01-HMC995LP5GE item J1, J2, J5, J6 J3, J4 C2, C3, C9, C12, C14, C16, C17, C19 C1, C4, C10, C11, C13, C15, C18, C20 C21, C22, C25 - C30 U1 pCB Description K Connector sri DC pin 100 pf Capacitor, 0402 pkg. [1] 10 nf Capacitor, 0402 pkg. 4.7uf Capacitor, Case A. HmC995lp5Ge power Amplifier 600-00163-00 evaluation pCB The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon fr4 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0 - 10 Amplifiers - lineAr & power - smT