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HMC996LP4E

HMC996LP4E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    HMC996LP4E - Variable Gain Amplifier 5 to 12 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
HMC996LP4E 数据手册
HMC996LP4E v00.0511 Variable Gain amplifier 5 to 12 GHz 0 Variable Gain amplifier - SmT Typical applications The HmC996lp4e is ideal for: • Point-to-Point Radio • Point-to-Multi-Point Radio • EW & ECM Subsystems • X-Band Radar • Test Equipment & Sensors features Wide Gain Control range: 22 db Single Control Voltage: -1 to -4.5V Output ip3 @ max Gain: +34 dbm Output p1db: +22 dbm low noise figure 2db @ max gain no external matching 24 lead 4x4 mm SmT package: 16 mm2 functional Diagram General Description The HmC996lp4e is a Gaas pHemT mmiC analog variable gain amplifier and / or driver amplifier which operates between 5 and 12 GHz. ideal for microwave radio applications, the amplifier provides up to 18.5 db of gain, output p1db of up to +23 dbm, and up to +34 dbm of output ip3 at maximum gain, while requiring only 170 ma from a +5V supply. Gain control voltage pin (Vctrl) is provided to allow variable gain control up to 22 db. Gain flatness is excellent making the HmC996lp4e ideal for eW, eCm and radar applications. The HmC996lp4e is housed in a roHS compliant 4 x 4 mm Qfn leadless package and is compatible with high volume surface mount manufacturing. electrical Specifications, Ta = +25°C, Vdd1, 2= 5V, Vctrl= -4.5V, idd= 120 ma* parameter frequency range Gain Gain flatness Gain Variation Over Temperature Gain Control range noise figure input return loss Output return loss Output power for 1 db Compression (p1db) Saturated Output power (psat) Output Third Order intercept (ip3) Total Supply Current (idd) 19 15 16 min. Typ. 5 - 8.5 18.5 ±0.5 0.006 22 2.5 17 23 22 23 34 120 20 15 13 max. min. Typ. 8.5 - 12 16 ±1 0.006 20 2 9 7 23 24 34 120 max. Units GHz db db db/ °C db db db db dbm dbm dbm ma *Set Vctrl = -4.5V and then adjust Vgg1, 2 between -2V to 0V to achieve idd = 120 ma typical. 0-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC996LP4E v00.0511 Variable Gain amplifier 5 to 12 GHz Gain vs. Control Voltage range 25 Vctrl = -4.5V Gain vs. Control Voltage 25 20 15 GAIN (dB) 10 5 0 5 GHz 6 GHz 8 GHz 10 GHz 11 GHz 12 GHz 0 Variable Gain amplifier - SmT 0-2 20 15 GAIN (dB) 10 5 0 -5 -10 5 6 7 8 9 Vctrl = -1.6V Vctrl = -1.0V Vctrl = -2.2V Vctrl = -2,5V Vctrl = -3.1V Vctlr = -3.4V Vctrl = -2.8V Vctrl = -1.9V -5 -10 10 11 12 -4 -3.7 -3.4 -3.1 -2.8 -2.5 -2.2 -1.9 -1.6 -1.3 -1 FREQUENCY (GHz) CONTROL VOLTAGE (V) broadband Gain & return loss 30 20 RESPONSE (dB) 10 Gain vs. Temperature 25 +25C +85C -40C 22 GAIN (dB) 0 -10 -20 -30 4 5 6 7 S21 S11 S22 19 16 13 10 8 9 10 11 12 13 5 6 7 8 9 10 11 12 FREQUENCY (GHz) FREQUENCY (GHz) input return loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 5 6 7 8 9 10 11 12 FREQUENCY (GHz) +25C +85C -40C Output return loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 5 6 7 8 9 10 11 12 FREQUENCY (GHz) +25C +85C -40C F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC996LP4E v00.0511 Variable Gain amplifier 5 to 12 GHz 0 Variable Gain amplifier - SmT input return loss @ Control Voltage extreme 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 5 6 7 8 9 10 11 12 FREQUENCY (GHz) -4.5 Volts -1.0 Volts Output return loss @ Control Voltage extreme 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 5 6 7 8 9 10 11 12 FREQUENCY (GHz) -4.5 Volts -1.0 Volts noise figure vs. Temperature 7 6 NOISE FIGURE (dB) 5 4 3 2 1 0 5 6 7 8 9 10 11 12 FREQUENCY (GHz) +25C +85C -40C noise figure vs. Control Voltage 18 16 NOISE FIGURE (dB) 14 12 10 8 6 4 2 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 CONTROL VOLTAGE (V) 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 11 GHz p1db vs. Temperature 30 25 20 15 10 5 0 5 6 7 8 9 10 11 12 FREQUENCY (GHz) Vctrl = -1V Vctrl = -4.5V psat vs. Temperature 30 Vctrl = -4.5V 25 20 15 10 +25C +85C -40C Vctrl = -1V P1dB (dBm) Psat (dBm) 5 0 5 6 7 8 9 10 +25C +85C -40C 11 12 FREQUENCY (GHz) 0-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC996LP4E v00.0511 Variable Gain amplifier 5 to 12 GHz reverse isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 5 6 7 8 9 10 11 12 FREQUENCY (GHz) 15 Vctrl=-1V, Pout=-14 dBm/tone 10 5 6 7 8 9 10 11 12 +25C +85C -40C Output ip3 vs. Temperature 40 Vctrl=-4.5V, Pout=7 dBm/tone 35 0 Variable Gain amplifier - SmT 0-4 30 IP3 (dBm) 25 +25C +85C -40C 20 FREQUENCY (GHz) ip3 and Gain @ 6 GHz, pin = -10 dbm 40 35 IP3 (dBm), GAIN (dB) 30 25 20 15 10 5 0 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 OIP3 GAIN IIP3 ip3 and Gain @ 8 GHz, pin = -10 dbm 40 35 IP3 (dBm), GAIN (dB) 30 25 20 15 10 5 0 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 OIP3 GAIN IIP3 CONTROL VOLTAGE (V) CONTROL VOLTAGE (V) ip3 and Gain @ 10 GHz, pin = -10 dbm 40 35 IP3 (dBm), GAIN (dB) 30 25 20 15 10 5 0 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 OIP3 GAIN IIP3 CONTROL VOLTAGE (V) F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC996LP4E v00.0511 Variable Gain amplifier 5 to 12 GHz 0 Variable Gain amplifier - SmT absolute maximum ratings Drain bias Voltage (Vdd1, 2) Gate bias Voltage (Vgg1, 2) Gain Control Voltage (Vctrl) rf power input Channel Temperature Continuous pdiss (T = 85 °C) (derate 11.5 mW/°C above 85 °C) [1] Thermal resistance (Channel to ground paddle) Storage Temperature Operating Temperature eSD Sensitivity (Hbm) +5.5V -3 to 0V -5 to 0V +20 dbm 175 °C 1.03 W 86.7 °C/W -65 to +150 °C -40 to +85 °C Class 0 passed 150V bias Voltage Vdd1,2(V) +5V Vgg1,2 (V) 0V to -2V idd Total (ma) 120 ma igg Total (ma)
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