HMC998_1108

HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz 0 Amplifiers - lineAr & power - Chip Typical Applications The hmC998 is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Military & Space • Telecom Infrastructure • Fiber Optics Features high p1dB output power: +31 dBm high psat output power: +33 dBm high Gain: 12 dB high output ip3: +41 dBm supply Voltage: Vdd = +10V to +15V @ 500 mA 50 ohm matched input/output Die size: 2.99 x 1.84 x 0.1 mm Functional Diagram General Description The hmC998 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 22 Ghz. The amplifier provides 12 dB of gain, +41 dBm output ip3 and +31 dBm of output power at 1 dB gain compression while requiring 500 mA from a +15V supply. This versatile PA exhibits a positive gain slope from 1 to 18 Ghz making it ideal for ew, eCm, radar and test equipment applications. The hmC998 amplifier i/os are internally matched to 50 ohms facilitating integration into mutli-chipmodules (mCms). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +15V, Vgg2 = +9.5V, Idd = 500 mA* parameter frequency range Gain Gain flatness Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) noise figure supply Current (idd) (Vdd= 15V, Vgg1= -0.7V Typ.) 29 9.5 min. Typ. 0.1 - 2 11.5 ±0.1 0.006 -20 -7 31 33 41 10 500 29 10.5 max. min. Typ. 2 - 18 12.5 ±0.7 0.11 -20 -20 31.5 33.5 41 4 500 27 10.5 max. min. Typ. 18 - 22 12.5 ±0.6 0.016 -15 -20 30 33 40 5 500 max. Units Ghz dB dB dB/ °C dB dB dBm dBm dBm dB mA * Adjust Vgg1 between -2 to 0V to achieve Idd = 500mA typical. 0-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Gain & Return Loss 20 Gain vs. Temperature 18 16 S21 S11 S22 0 Amplifiers - lineAr & power - Chip 0-2 10 RESPONSE (dB) 14 GAIN (dB) 12 10 0 -10 -20 8 6 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 +25C +85C -55C -30 FREQUENCY (GHz) 16 18 20 22 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 +25C +85C -55C RETURN LOSS (dB) -10 -10 RESPONSE (dB) -20 -20 -30 -30 -40 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) -40 0 4 8 12 16 20 24 FREQUENCY (GHz) Low Frequency Gain & Return Loss 20 10 0 -10 -20 -30 -40 -50 0.0001 Noise Figure vs. Frequency 10 9 8 NOISE FIGURE (dB) +25C +85C -55C RESPONSE (dB) S21 S11 S22 7 6 5 4 3 2 1 0.001 0.01 0.1 1 10 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz 0 Amplifiers - lineAr & power - Chip P1dB vs. Temperature 36 34 32 30 28 26 24 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C Psat vs. Temperature 36 34 32 30 28 26 24 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +25C +85C -55C P1dB (dBm) P1dB vs. Vdd 36 34 32 30 28 26 24 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 10V 12V 14V 15V Psat vs. Vdd 36 34 32 30 28 26 24 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 10V 12V 14V 15V P1dB (dBm) Output IP3 vs. Temperature @ Pout = 18 dBm Tone 50 Output IP3 vs. Vdd @ Pout = 18 dBm Tone 50 45 Psat (dBm) IP3 (dBm) +25C +85C -55C Psat (dBm) 45 IP3 (dBm) 40 40 35 35 10V 12V 14V 15V 30 30 25 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 25 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) 0-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Output IP3 vs. Output Power @ 11 GHz 50 Pout (dBm), GAIN (dB), PAE (%) 400 mA 450 mA 500 mA Power Compression @ 4 GHz 35 30 25 20 15 10 5 0 Pout Gain PAE 0 Amplifiers - lineAr & power - Chip 0-4 45 IP3 (dBm) 40 35 30 25 10 12 14 16 18 20 22 OUTPUT POWER (dBm) 0 5 10 15 20 25 INPUT POWER (dBm) Power Compression @ 10 GHz 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 0 5 10 15 20 25 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 20 GHz 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 0 5 10 15 20 25 INPUT POWER (dBm) Pout Gain PAE Power Dissipation 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 INPUT POWER (dBm) Second Harmonics vs. Temperature @ Pout = 18 dBm 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +25C +85C -55C POWER DISSIPATION (W) Max Pdis @ 85C 2 GHz 10 GHz 20 GHz F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz 0 Amplifiers - lineAr & power - Chip Second Harmonics vs. Vdd @ Pout = 18 dBm 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +12V +14V +15V Second Harmonics vs. Pout 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) +12 dBm +14 dBm +16 dBm +18 dBm +20 dBm +22 dBm Reverse Isolation vs Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 0 4 8 12 16 20 24 FREQUENCY (GHz) +25C +85C -55C Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 °C) (derate 129 mW/°C above 85 °C) Thermal resistance (channel to die bottom) output power into Vswr >7:1 storage Temperature operating Temperature +17 Vdc -3 to 0 Vdc Vgg2 = (Vdd - 6.5V) to (Vdd-4.5V) +27 dBm 150 °C 8.4 w Typical Supply Current vs. Vdd Vdd (V) +12 +14 +15 idd (mA) 500 500 500 Vgg1 adjust to achieve idd = 500 mA 7.73 °C/w +32 dBm -65 to 150°C -55 to 85 °C eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions 0-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Outline Drawing 0 Amplifiers - lineAr & power - Chip 0-6 Die Packaging Information standard Gp-1 (Gel pack) [1] Alternate [2] noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is 0.004” 3. TYpiCAl BonD pAD is 0.004” sQUAre 4. BonD pAD meTAliZATion: GolD 5. BACKsiDe meTAliZATion: GolD 6. BACKsiDe meTAl is GroUnD 7. no ConneCTion reQUireD for UnlABeleD BonD pADs 8. oVerAll Die siZe ±0.002” [1] For more information refer to the “Packaging Information” Document in the Product Support Section of our website . [2] For alternate packaging information contact Hittite Microwave Corporation. F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz 0 Amplifiers - lineAr & power - Chip Pad Descriptions Pad Number function Description interface schematic 1 rfin This pad is DC coupled and matched to 50 ohms. Blocking capacitor is required. 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. for nominal operation +9.5V should be applied to Vgg2. 4, 7 3 5 ACG2, ACG4 ACG1 rfoUT & VDD Low frequency termination. Attach bypass capacitor per application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (idd). see application circuit herein. 6 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. please follow “mmiC Amplifier Biasing procedure” application note. Die Bottom GnD Die bottom must be connected to RF/DC ground. 0-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz Assembly Diagram 0 Amplifiers - lineAr & power - Chip 0-8 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 800mA F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC998 v01.0811 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 22 GHz 0 Amplifiers - lineAr & power - Chip Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: follow esD precautions to protect against > ± 250V esD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible