HMC999

HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications The hmC999 is ideal for: Features high p1dB output power: 38 dBm high psat output power: 40 dBm high output ip3: 47 dBm high Gain: 11 dB supply Voltage: +28V, +40V or +48V @ 1100 mA 50 ohm matched input/output Die size: 3.66 x 1.91 x 0.1 mm Amplifiers - lineAr & power - Chip • Test Instrumentation • Military Communications • Jammers and Decoys • Radar, EW & ECM Subsystems • Space Functional Diagram General Description The hmC999 is a Gan hemT mmiC Distributed power Amplifier which operates between 0.01 and 10 Ghz. The amplifier provides 11 dB of gain, 47 dBm output ip3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply. The hmC999 amplifier provides 10 watts of saturated power in a chip area only 7 mm2, equating to a power density of 1.5 w/mm2 over 3 decades of bandwidth. All data is taken with the chip connected via two 25 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25°C [2], Vdd = +48 V, Vgg2 = +22 V, Idd = 1100 mA* [1] parameter frequency range Gain Gain flatness Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3) supply Current (idd) (Vdd = 48V, Vgg = 22V Typ.) 36.5 10.5 min. Typ. 0.01 - 2 12.5 ±0.8 0.017 20 13 38.5 40.5 48 1100 36 9 max. min. Typ. 2-6 11 ±0.4 0.02 18 15 38 40 47 1100 34.5 8.5 max. min. Typ. 6 - 10 10.5 ±0.7 0.025 15 14 36.5 39.5 45.5 1100 max. Units Ghz dB dB dB/ °C dB dB dBm dBm dBm mA * Adjust Vgg1 between -5 to 0 V to achieve Idd = 1100 mA typical. [1] S parameter and OIP3 data taken at Idd=1000mA [2] Probe station chuck temperature adjusted to bring backside of die to +25°C 0-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Gain & Return Loss @ Vdd = 48V, Idd = 1000 mA 20 10 RESPONSE (dB) S21 S11 S22 Gain vs. Temperature @ Vdd = 48V, Idd = 1000 mA 16 14 0 12 -10 10 -20 8 -30 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 6 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Input Return Loss vs. Temperature @ Vdd =48V, Idd = 1000 mA 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C Output Return Loss vs. Temperature @ Vdd = 48V, Idd = 1000 mA 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) +25C +85C Low Frequency Gain & Return Loss @ Vdd = 48V, Idd = 1000 mA 20 10 RESPONSE (dB) Gain & Return Loss @ Vdd = 40V, Idd = 1000 mA 20 10 RESPONSE (dB) 0 S21 S11 S22 0 S21 S11 S22 -10 -10 -20 -20 -30 0.001 -30 0.01 0.1 FREQUENCY (GHz) 1 10 0 2 4 6 8 10 12 14 FREQUENCY (GHz) F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-2 Amplifiers - lineAr & power - Chip +25C +85C GAIN (dB) HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Gain & Return Loss @ Vdd = 28V, Idd = 1000 mA 20 Gain vs. Supply Current @ Vdd = 48V 16 14 Amplifiers - lineAr & power - Chip 10 RESPONSE (dB) S21 S11 S22 0 GAIN (dB) 12 -10 10 -20 8 500 mA 600 mA 700 mA 800 mA 900 mA 1000 mA -30 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 6 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Gain vs. Supply Voltage @ Idd = 1000 mA 16 +48V +40V +28V P1dB vs. Temperature 50 +25C +85C 14 45 P1dB (dBm) GAIN (dB) 12 40 10 35 8 30 6 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) P1dB vs. Supply Voltage 50 +28V +40V +48V Psat vs. Temperature 50 +25C +85C 45 P1dB (dBm) 45 Psat (dBm) 40 40 35 35 30 30 25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 0-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Psat vs. Supply Voltage 50 P1dB vs. Supply Current 50 45 P1dB (dBm) Psat (dBm) 45 40 40 35 +28V +40V +48V 35 30 30 25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Psat vs. Supply Current 50 Output IP3 @ Pout = 26 dBm / Tone 60 55 45 Psat (dBm) 25C 50 40 45 35 30 600 mA 700 mA 800 mA 900 mA 1000 mA 1100 mA 40 35 25 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) 30 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) Output IM3 @ Vdd = +48V 80 70 60 IM3 (dBc) 50 40 30 20 10 10 12 14 16 18 20 22 24 26 28 30 32 34 Pout/Tone (dBm) 2 GHz 4 GHz 6 GHz 8 GHz F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-4 Amplifiers - lineAr & power - Chip 600 mA 700 mA 800 mA 900 mA 1000 mA 1100 mA IP3 (dBm) HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Reverse Isolation vs. Temperature 0 Power Compression @ 4 GHz 45 Pout(dBm), GAIN(dB), PAE(%) 1800 Pout Gain PAE Amplifiers - lineAr & power - Chip REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 0 1 2 3 4 5 6 +25C +85C 40 35 30 25 20 15 10 5 0 1600 1400 1200 1000 800 Idd Idd (mA) 600 400 200 0 7 8 9 10 0 4 8 12 16 20 24 28 32 FREQUENCY (GHz) INPUT POWER (dBm) Power Dissipation 60 4 GHz 8 GHz POWER DISSIPATION (W) 56 52 48 44 40 0 4 8 12 16 20 24 28 32 INPUT POWER (dBm) 0-5 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Second Harmonics vs. Idd @ Pout = +26 dBm, Vdd = 48V 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 FREQUENCY(GHz) 800mA 900mA 1000mA 1100mA Second Harmonics vs. Vdd @ Pout = +26 dBm, Idd = 1100 mA 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 FREQUENCY(GHz) SECOND HARMONIC (dBc) +48V +40V +28V Second Harmonics vs. Pout Vdd = 48V & Vgg = 22V & Idd = 1100 mA 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 2 4 6 8 10 12 FREQUENCY(GHz) +14 dBm +18 dBm +22 dBm +26 dBm +30 dBm Second Harmonics vs. Temperature Vdd = 48V & Vgg = 22V & Idd = 1100 mA Pout = 26 dBm 70 SECOND HARMONIC (dBc) 60 50 40 30 20 10 0 0 2 4 6 8 10 12 FREQUENCY(GHz) +25C +85C Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) 56V -5 to 0V 6V to (Vdd - 8V) eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions rf input power @ fin < 0.2Ghz (rfin) 28 dBm rf input power @ fin > 0.2Ghz (rfin) 36 dBm Channel Temperature Continuous pdiss (T= 85 °C) (derate 729 mw/°C above 85 °C) Thermal resistance [1] 225 °C 102 w 1.37 °C/w 40 dBm -65 to 150 °C -55 to 85 °C Typical Supply Current vs. Vdd Vdd (V) 28 40 48 idd (mA) 1100 1100 1100 output power into Vswr > 7:1 storage Temperature operating Temperature [1] Includes 0.5 mil thick thermally conductive epoxy layer. Epoxy thermal conductivity = 60 W/mC F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-6 Amplifiers - lineAr & power - Chip SECOND HARMONIC (dBc) HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Outline Drawing Amplifiers - lineAr & power - Chip Die Packaging Information standard Gp-1 (Gel pack) [1] noTes: 1. All Dimensions in inChes [millimeTers] 2. Die ThiCKness is 0.004 (0.100) 3. TYpiCAl BonD pAD is 0.004 (0.100) sQUAre 4. BonD pAD meTAliZATion: GolD 5. BACKsiDe meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD 7. no ConneCTion reQUireD for UnlABeleD BonD pADs 8. oVerAll Die siZe is ±.002 Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 0-7 F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Pad Descriptions pad number function Description interface schematic 1 rfin This pad is DC coupled and matched to 50 ohms. external blocking capacitor is required 2, 6 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. for nomiinal operation +22V should be applied to either pad 2 or pad 6. 3, 4 AGC1, AGC2 rfoUT & VDD low frequency termination. Attach bypass capacitor per application circuit herein. rf output for amplifier. Connect DC bias (Vdd) network to provide drain current idd). see application circuit herein. Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. please follow “mmiC Amplifier Biasing procedure” application note. This voltage may be applied to either pad. Die bottom must be connected to rf/DC ground 6 7, 8 Die Bottom VGG1 GnD F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-8 Amplifiers - lineAr & power - Chip HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Assembly Diagram Amplifiers - lineAr & power - Chip 0-9 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing ~1800 mA F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC999 v00.0611 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Mounting & Bonding Techniques for Millimeterwave GaN MMICs 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick copper tungsten heat spreader which is then attached to the thermally conductive ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Wire Bond 0.076mm (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. follow esD precautions to protect against esD 0.150mm (0.005”) Thick Copper Tungsten 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004”) Thick GaN MMIC 0.076mm (0.003”) Wire Bond RF Ground Plane Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding rf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). F or price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0 - 10 Amplifiers - lineAr & power - Chip The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 0.102mm (0.004”) Thick GaN MMIC