HOA2498
Reflective Sensor
FEATURES
• Choice of phototransistor or photodarlington
output
• Focused for maximum response
• Wide operating temperature range
(- 55¡C to +100¡C)
INFRA-64.TIF
DESCRIPTION
The HOA2498 series consists of an infrared emitting
diode and an NPN silicon phototransistor
(HOA2498- 001, - 002) or photodarlington
(HOA2498- 003), encased side- by- side on converging
optical axes in a black thermoplastic housing. The
detector responds to radiation from the IRED only when
a reflective object passes within its field of view. The
HOA2498 series employs metal can packaged
components. For additional component information see
SE1450, SD1440, and SD1410.
Housing material is polyester. Housings are soluble in
chlorinated hydrocarbons and ketones. Recommended
cleaning agents are methanol and isopropanol.
OUTLINE DIMENSIONS in inches (mm)
Tolerance
3 plc decimals
±0.010(0.25)
2 plc decimals
±0.020(0.51)
.250(6.35)
.070(1.78)
.625(15.88)
.450(11.43)
.75(19.05)
.50(12.7)
TEST
SURFACE
(E) EMITTER
(C) COLLECTOR
(A) ANODE
(K) CATHODE
.250(6.35
.150(3.81)
.062(1.60)R
2 PLCS
.040(1.02)
.187(4.75)
DIM_039.ds4
260
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
HOA2498
Reflective Sensor
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
IR EMITTER
DETECTOR
COUPLED CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted)
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
IR EMITTER
Power Dissipation
Reverse Voltage
Continuous Forward Current
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Collector DC Current
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
-55¡C to 100¡C
-55¡C to 125¡C
260¡C
75 mW [À]
3V
50 mA
TRANS.
30 V
5V
75 mW [À]
30 mA
DARLINGTON
15 V
5V
75 mW [À]
30 mA
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261
HOA2498
Reflective Sensor
Fig. 1
IRED Forward Bias Characteristics
Fig. 2
gra_073.ds4
Pulsed
condition
TA = 80°C
TA = 25°C
TA = -40°C
100
Photodarlington
10
Phototransistor
1
0.8
1.0
1.2
1.4
1.6
1.8
10
2.0
100
1000
10000
Load resistance - Ohms
Forward voltage - V
Fig. 4
Dark Current vs
Temperature
gra_303.cdr
Normalized collector current
Fig. 3
gra_079.ds4
1000
Response time - µs
Forward current - mA
100
90
80
70
60
50
40
30
20
10
0
Non-Saturated Switching Time vs
Load Resistance
Collector Current vs
Ambient Temperature
gra_076.ds4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
Free-air temperature - °C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Normalized collector current
Fig. 6
Collector Current vs
Distance to Reflective Surface
gra_084.ds4
Normalized collector current
Fig. 5
IF = 30 mA
VCE = 5.0 V
0.0
0.00
0.10
0.20
0.30
0.40
0.50
0.60
Collector Current vs
IRED Forward Current
gra_085.ds4
1.80
1.60
1.40
1.20
1.00
0.80
VCE = 5 V
d = 0.5 in.
0.60
0.40
0.20
0.00
0
Distance to reflective surface - inches
10
20
30
40
50
IRED forward current - mA•
All Performance Curves Show Typical Values
262
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
HOA2498
Reflective Sensor
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
263
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