HTNFET-T

HTMOSTM High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET HTNFET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics • Typical Input Voltage up to 60V • Turbine Engine Control • Silicon-On-Insulator (SOI) • Industrial Process Control • 4-Pin Power-Tab Package, • Nuclear Reactor 8-Pin Ceramic Dip with Integral Heat Sink or • Electric Power Conversion Die Dimensions 4.699 x 2.286 mm • Heavy Duty Internal Combustion Engines GENERAL DESCRIPTION The HTNFET is a high reliability N-Channel Power FET designed specifically for extremely wide temperature range applications such as down-hole instrumentation, aerospace, turbine engine and industrial process control. This power FET is fabricated using a Silicon-On-Insulator (SOI) process that dramatically reduces leakage currents at high temperatures. High DC current capability combined with low Rds-ON make this component suitable both for DC and switching applications. Typically, parts will operate at +300°C up to a year, with derated performance. All parts are burned in to eliminate infant mortality. Additionally, each part is tested over 55 to +225°C to provide guaranteed performance over the entire temperature band. FUNCTIONAL DIAGRAM PACKAGE DIAGRAMS Drain 8-Pin Ceramic DIP With Heat Sink 4-Pin Power-Tab Package Gate Source Drain 1 8 Source Drain 2 7 Gate Gate 3 6 Source Drain 4 5 Source DIE DIAGRAM Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com HTNFET ELECTRICAL CHARACTERISTICS Symbol -55 to +225°C, unless otherwise specified Parameters Test Conditions Typ (1) Worst Case (2) Min V(BR)DSS Drain-source breakdown voltage 55 VGS = 0, ID = 100 μADC RDS (on) Static drain-to-source on-state resistance @ Ta=25° C VGS = +5VDC, ID = 0.1A 0.4 VGS (th) Gate threshold voltage @ Ta=25° C VGS = VDS, ID = 100 μA 1.6 IGSS Units Max V Ω 2.4 V Gate-to-source forward leakage VGS = +5 VDC 100 nA Gate-to-source reverse leakage VGS = -5 VDC -100 nA Guaranteed by design Qg Total gate charge (CGS + CGD) td (on) Turn-on delay time tr Rise time td (off) Turn-off delay time tf Fall time Ciss Input capacitance VDD = +50 V; VGS = +5 V (VGS, sweep = 0 to +10 V); d = 10%; τ = 1 ms 4.3 nC VDD=+50 V; 10 ns VGS, sweep = 0 to +10 V; 20 ns d= 0.1%; τ= 1 ms; 64 ns RD= 15 Ω, RG= 30 Ω 20 ns 290 pF 87 pF 14 pF VGS=0, VDS = +28 V f = 1.0 MHz (0.1 V oscillation) Coss Output capacitance Crss Reverse transfer capacitance (1) Typical operating conditions: VDS = 10 V, TA=25°C. (2) Worst case operating conditions: VDS = 50 V, TA = -55 to 225°C. IDSS vs TEMPERATURE ABSOLUTE MAXIMUM RATINGS (1, 2) 0 50 100 150 200 250 1.00E-04 Conditions Value Units ID Continuous Drain Current @Tj = 25° C TBD A ID Continuous Drain Current @Tj = 200° C TBD A VGS Gate-To-Source Voltage 10 V dv/dt Peak Diode Recovery TBD V/ns TJ Operating Junction -55 to +300 °C Tstg Storage Temperature Range -55 to +300 °C Pd Operating Power 50 W (3) @Tj = 250° C 1.00E-05 1.00E-06 IDSS (A) Symbol Parameters 1.00E-07 1.00E-08 1.00E-09 1.00E-10 1.00E-11 (1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability. (2) ESD sensitivity is determined by the gate capacitance; additional ESD protection would decrease performance. (3) Derate power at 1W/C to Tj = 300°C. Temperature (C) VDS = 90 V VDS = 50 V VDS = 10 V Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. 900214 Rev. D 6-04