SD1440
Silicon Phototransistor
FEATURES
• Compact, metal can coaxial package
• 24¡ (nominal) acceptance angle
• Wide sensitivity ranges
• Wide operating temperature range
(- 55¡C to +125¡C)
• Mechanically and spectrally matched to SE1450
and SE1470 infrared emitting diodes
INFRA-63.TIF
DESCRIPTION
The SD1440 is an NPN silicon phototransistor mounted
in a glass lensed metal can coaxial package. The
package may have a tab or second lead welded to the
can as an optional feature (SD1440-XXXL). Both leads
are flexible and may be formed to fit various mounting
configurations.
OUTLINE DIMENSIONS in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
SD1440-XXX
.091(2.26)
EMITTER
COLLECTOR
.020(0.51)
.079(2.01)
.076(1.93)
DIA
~
~
.062(1.57) DIA
DIA
.010(0.25)
.095(2.41) DIA
.122(3.10)
.106(2.69)
1.000(25.40)
MIN
DIM_12a.ds4
SD1440-XXXL
.091(2.26)
.020
(0.51) DIA
EMITTER
~
~
.079(2.01)
.076(1.93)
DIA
COLLECTOR
.020
(0.51) DIA
~
~
.062(1.57) DIA
.010(0.25)
~
~
.095(2.41) DIA
.122(3.10)
.106(2.69)
1.000(25.40)
TYPICAL MIN
DIM_12b.ds4
100
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SD1440
Silicon Phototransistor
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
UNITS
TEST CONDITIONS
SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
30 V
5V
75 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.71 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
101
SD1440
Silicon Phototransistor
SWITCHING TIME TEST CIRCUIT
SWITCHING WAVEFORM
cir_015.cdr
Fig. 1
Responsivity vs
Angular Displacement
Fig. 2
gra_051.ds4
Collector Current vs
Ambient Temperature
Normalized collector
current
-40
-30
-20
-10
0
1.6
1.2
0.8
0.4
0.0
+10 +20 +30 +40
0
Angular displacement - degrees
Fig. 3
gra_039.ds4
2.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Relative response
cir_004.cdr
Dark Current vs
Temperature
10
20
30
40
50
60
70
80
Ambient temperature - °C
Fig. 4
gra_303.cdr
Non-Saturated Switching Time vs
Load Resistance
gra_041.ds4
Response time - µs
100
10
1
10
100
1000
10000
Load resistance - Ohms
102
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SD1440
Silicon Phototransistor
Fig. 5
Spectral Responsivity
Fig. 6
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Coupling Characteristics
with SE1450
gra_006.ds4
1.0
Normalized light
current
Relative response
gra_036.ds4
0.8
0.6
0.4
0.2
0.0
400
600
800 1000 1200
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Lens-to-lens separation - inches
Wavelength - nm
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
103
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