SDP8405

17 September 1997 SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ (nominal) acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF DESCRIPTION The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) .200(5.08) .180(4.57) .03 (.76) .05(1.27) COLLECTOR EMITTER .125 (3.18) .115 (2.92) DIA. .500 MIN. (12.7) .155 DIA. (3.94) .020 SQ.LEAD TYP. LEAD (.51) .050 (1.27) .250 (6.35) MAX. DIM_100.ds4 © Honeywell Inc. h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 17 September 1997 SDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) 30 V 5V 70 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C SCHEMATIC Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc. 17 September 1997 SDP8405 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT cir_015.cdr SWITCHING WAVEFORM cir_004.cdr Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 Fig. 2 gra_047.ds4 Collector Current vs Ambient Temperature 2.0 gra_039.ds4 Normalized collec tor current +10 +20 +30 +40 Relative res ponse 1.6 1.2 0.8 0.4 0.0 0 10 20 30 40 50 60 70 80 Angular displacement - degrees Fig. 3 Dark Current vs Temperature Fig. 4 gra_301.cdr Ambient temperature - °C Non-Saturated Switching Time vs Load Resistance 100 gra_041.ds4 Respons e time - µs 10 1 10 100 1000 10000 Load resistance - Ohms © Honeywell Inc. h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 17 September 1997 SDP8405 Silicon Phototransistor Fig. 5 Spectral Responsivity gra_036.ds4 Fig. 6 Coupling Characteristics with SEP8505 10 7 gra_029.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 400 600 800 1000 1200 Relative res pons e Light current - mA 4 2 1 0.7 0.4 0.2 0.1 0.01 0.02 0.04 VCE = 5 V IF = 25 mA TA = 25 °C 0.1 0.2 0.4 0.7 1 Wavelength - nm All Performance Curves Show Typical Values Lens-to-lens separation - inches Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc.