SE1450-004L

SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ (nominal) beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1450-XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE1450-XXX .091(2.26) CATHODE (CASE) ANODE .020(0.51) DIA .062(1.57) DIA .079(2.01) .076(1.93) DIA .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1450-XXXL .091(2.26) .020 (0.51) DIA CATHODE ~ ~ .079(2.01) .076(1.93) DIA ANODE .020 (0.51) DIA ~ ~ .062(1.57) DIA .010(0.25) ~ ~ .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) TYPICAL MIN DIM_001b.ds4 8 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) 50 mA 75 mW [À] -55¡C to 125¡C -65¡C to 150¡C 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 9 SE1450 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement Fig. 2 gra_001.ds4 Normalized radiant intensity Relative intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 Radiant Intensity vs Forward Current 0.0 +10 +20 +30 +40 10.0 gra_003.ds4 1.40 1.35 1.35 1.30 1.25 1.20 1.15 1.10 gra_200.ds4 1.30 1.25 1.20 1.15 IF = 20 mA 1.10 20 40 60 -50 Fig. 6 Spectral Bandwidth gra_005.ds4 0 25 50 75 100 125 Coupling Characteristics with SD1440 gra_006.ds4 1.0 Normalized light current 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 -25 Temperature - °C Forward current - mA Relative intensity 50.0 1.00 0 0.8 0.6 0.4 0.2 0.0 890 910 930 950 970 990 1010 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Wavelength - nm 10 40.0 1.05 1.05 Fig. 5 30.0 Forward Voltage vs Temperature 1.40 Forward voltage - V Forward voltage - V Fig. 4 Forward Voltage vs Forward Current 20.0 Forward current - mA Angular displacement - degrees Fig. 3 gra_002.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Lens-to-lens separation - inches h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE1450 GaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 Relative power output 10 5.0 IF = 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100 TA - Free-air temperature - (°C) All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 11