SE3455/5455
GaAs Infrared Emitting Diode
FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° (nominal) beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications • Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491 phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger
INFRA-83.TIF
DESCRIPTION The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.
OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE3455
.188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN.
45° .046(1.17) .036(.91) .100(2.54)DIA NOM
1 2
.048(1.22) .160 (4.06) DIA. .137 (3.48) .015 (0.36) .153 (3.89) .140 (3.56) .028(.71) .018 DIA. (.460)
INFRA--5.DIM
LEADS: 1. CATHODE (TAB) 2. ANODE (CASE)
SE5455
.188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN. 45° .046(1.17) .036(.91) .100(2.54)DIA NOM
1 2
.160 (4.06) DIA. .137 (3.48) .247 (6.27) .224 (5.89)
.015 (0.36) .200 5.08
.048(1.22) .028(.71) .018 DIA. (.460)
LEADS: 1. CATHODE (TAB) 2. ANODE (CASE)
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© Honeywell Europe S.A.
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
SE3455/5455
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) PARAMETER Total Power Output SE3455-001, SE5455-001 SE3455-002, SE5455-002 SE3455-003, SE5455-003 SE3455-004, SE5455-004 Forward Voltage Reverse Breakdown Voltage Peak Output Wavelength Spectral Bandwidth Spectral Shift With Temperature Beam Angle(1) SE3455 SE5455 Radiation Rise And Fall Time SYMBOL PO MIN 2.0 3.5 4.8 5.4 VF VBR λp ∆λ ∆λp/∆T Ø 1.7 3.0 935 50 0.3 90 20 0.7 V V nm nm nm/°C degr. IF=100 mA IR=10 µA TYP MAX UNITS mW TEST CONDITIONS IF=100 mA
IF=Constant
tr, tf
µs
Notes 1. Beam angle is defined as the total included angle between the half intensity points.
ABSOLUTE MAXIMUM RATINGS (25°C Free-Air Temperature unless otherwise noted) Continuous Forward Current Peak Forward Current (1µs pulse width, 300 pps) Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) 100 mA 3A 150 mW(1) -55°C to 125°C -65°C to 150°C 260°C
SCHEMATIC
Anode
Notes 1. Derate linearly from 25°C free-air temperature at the rate of 1.43 mW/°C.
INFRA--1.SCH
Cathode
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
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SE3455/5455
GaAs Infrared Emitting Diode
Fig. 1 Radiant Intensity vs Angular Displacement (SE3455)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 2
Radiant Intensity vs Angular Displacement (SE5455)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40
Relative intensity
INFRA-17.GRA
INFRA-23.GRA
Relative intensity
Angular displacement - degrees
Angular displacement - degrees
Fig. 3
Radiant Intensity vs Forward Current
250
Fig. 4
Forward Voltage vs Forward Current
Normalized radiant intensity - %
200 150 100 50 0.0
INFRA-18.GRA
INFRA-19.GRA
Forward voltage - V
Pulsed
1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 20 40 60 80 100
0
100
200
300
400
500
Forward current - mA
Forward current - mA
Fig. 5
Forward Voltage vs Temperature
1.35
Fig. 6
Spectral Bandwidth
Forward voltage - V
1.33 1.31 1.29 1.27 1.25 1.23
INFRA-20.GRA
IF = 100 mA
-30
-10
10
30
50
70
90
INFRA--5.GRA
1.21
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 890 910 930 950 970 990 1010
Relative intensity
Temperature - °C
All Performance Curves Show Typical Values
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Wavelength - nm
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
SE3455/5455
GaAs Infrared Emitting Diode
Fig. 7 Coupling Characteristics SE3455 with SD3443
1.0
Fig. 8
Coupling Characteristics SE5455 with SD5443
1.0
Normalized light current
INFRA-21.GRA
Normalized light current
0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0
0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 89
Window-to-window distance - inches
INFRA-24.GRA
Lens-to-lens distance - inches
Fig. 9
Radiant Intensity vs Case Temperature
Normalized radiant intensity
5.0 4.0 3.0 2.0 1.0 0.5 0.4 0.3 0.2 -75 -50 -25 0
Normalized to IF = 100 mA TA = 25 °C
25
50
75 100 125
Case temperature - °C
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
INFRA-22.GRA
0.1
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