SEP8506

SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ (nominal) beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger INFRA-20.TIF DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) DIM_071.ds4 40 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8506 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Storage Temperature Range Operating Temperature Range Soldering Temperature (5 sec) 50 mA 100 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C SCHEMATIC Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 41 SEP8506 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 Fig. 2 gra_030.ds4 Radiant Intensity vs Forward Current 10.0 5.0 2.0 1.0 0.5 0.2 0.1 10 20 30 40 50 gra_028.ds4 Normalized radiant intensity Relative intensity TA = 25 °C 100 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 0 20 40 60 Forward current - mA Fig. 4 Forward Voltage vs Temperature 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 -40 -15 10 35 60 85 IF = 20 mA gra_003.ds4 gra_207.ds4 Forward current - mA Fig. 5 Spectral Bandwidth gra_005.ds4 Forward voltage - V Forward voltage - V Temperature - °C Fig. 6 Coupling Characteristics with SDP8406 10 6 4 2 1.0 0.6 0.4 0.2 0.1 0.01 gra_031.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 Light current - mA Relative intensity IF = 20 mA VCE = 5V TA = 25 °C 0.02 0.05 0.1 0.2 0.5 1.0 890 910 930 950 970 990 1010 Wavelength - nm Lens-to-lens separation - inches 42 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8506 GaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature 10 5.0 2.0 1.0 0.5 gra_130.ds4 Relative power output IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA 0.2 0.1 -50 -25 0 +25 +50 +75 +100 TA - Free-air temperature - (°C) All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 43