SEP8507-001

SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ (nominal) beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor INFRA-18.TIF DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting diode molded in an end-emitting red plastic package. The chip is positioned to emit radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.008(0.20) 2 plc decimals ±0.020(0.51) DIM_009.cdr 44 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8507 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) 60 mA 100 mW [À] -40¡C to 85¡C -40¡C to 85¡C 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.66 mW/¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 45 SEP8507 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement Normalized radiant intensity Relative intensity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -160 -120 -80 Fig. 2 gra_032.ds4 -40 0 Radiant Intensity vs Forward Current 5.0 TA = 25 °C 2.0 1.0 0.5 0.2 0.1 +40 +80 +120 +160 10 20 Angular displacement - degrees Fig. 3 gra_003.ds4 1.40 Forward voltage - V Forward voltage - V 1.30 1.25 1.20 1.15 1.10 100 Forward Voltage vs Temperature gra_207.ds4 1.35 1.30 1.25 1.20 1.15 IF = 20 mA 1.10 1.05 1.05 1.00 0 20 40 60 -40 -15 Forward current - mA Fig. 6 Spectral Bandwidth 35 60 85 Relative Power Output vs Free Air Temperature gra_130.ds4 10 Relative power output 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 10 Temperature - °C gra_005.ds4 Relative intensity 40 50 1.40 1.35 Fig. 5 30 Forward current - mA Fig. 4 Forward Voltage vs Forward Current gra_028.ds4 10.0 5.0 IF = 40 mA IF = 30 mA IF = 20 mA 2.0 1.0 0.5 IF = 10 mA 0.2 0.1 890 910 930 950 970 990 1010 -50 Wavelength - nm -25 0 +25 +50 +75 +100 TA - Free-air temperature - (°C) All Performance Curves Show Typical Values 46 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8507 GaAs Infrared Emitting Diode Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 47