1N5767

PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. 0.41 (.016) 0.36 (.014) 25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068) 4.32 (.170) 3.81 (.150) CATHODE 25.4 (1.00) MIN. DIMENSIONS IN MILLIMETERS AND (INCHES). Outline 15 Maximum Ratings Junction Operating and Storage Temperature Range ................................................ -65°C to +150°C Power Dissipation 25°C ..................................................................... 250 mW (Derate linearly to zero at 150°C) Peak Inverse Voltage (PIV) ........................................................ same as VBR Maximum Soldering Temperature ....................................... 260°C for 5 sec 2 Mechanical Specifications The Agilent Outline 15 package has a glass hermetic seal with dumet leads. The lead finish is 955 tin-lead (SnPb) for all PIN diodes. The leads on the Outline 15 package should be restricted so that the bend starts at least 1/ 16 inch (1.6 mm) from the glass body. Typical package inductance and capacitance are 2.5 nH and 0.13 pF, respectively. Marking is by digital coding with a cathode band. General Purpose Diodes Electrical Specifications at TA = 25°C Part Number 5082Maximum Total Capacitance CT (pF) Minimum Breakdown Voltage VBR (V) Maximum Residual Series Resistance RS (Ω) 1.0 1.25 1.25 1.5 0.6** IF =100 mA *IF = 20 mA **IF = 10 mA f = 100 MHz Effective Carrier Reverse Recovery Lifetime Time τ (ns) trr (ns) 100 (min.) 100 (min.) 100 (min.) 100 (min.) 70 (typ.)* IF = 50 mA IR = 250 mA *IF = 10 mA *IR = 6 mA 100 (typ.) 100 (typ.) 100 (typ.) 100 (typ) 12 (typ.) IF = 20 mA VR = 10 V 90% Recovery General Purpose Switching and Attenuating 3001 0.25 200 3039 0.25 150 1N5719 0.3** 150 3077 0.3 200 Band Switching 3188 1.0* 35 Test VR = 50 V VR = VBR Conditions *VR = 20 V Measure **VR = 100 V IR ≤ 10 µA f = 1 MHz Notes: Typical CW power switching capability for a shunt switch in a 50 Ω system is 2.5 W. RF Current Controlled Resistor Diodes Electrical Specifications at TA = 25°C Max. Effective Min. Residual Max. Carrier Breakdown Series Total Lifetime Voltage Resistance Capacitance t (ns) VBR (V) RS (Ω) CT (pF) 1300 (typ.) 100 2.5 0.4 1300 (typ.) 100 2.5 0.4 1300 (typ.) 50 0.4 2500 (typ.) 100 3.5 0.4 High Resistance Limit, RH (W) Min. 1000 1000 1500 Max. Low Resistance Limit, RL (W) Min. Max. 8** 8** 8** 8** Max. Difference in Resistance vs. Bias Slope, Dc Part Number 5082-3080 1N5767* 5082-3379 5082-3081 Test IF = 50 mA VR = VBR, IF = 100 mA Conditions IR = 250 mA Measure f = 100 MHz IR ≤ 10 µA VR = 50 V f = 1 MHz IF = 0.01 mA f = 100 MHz IF = 1.0 mA Batch IF = 20 mA** Matched at f = 100 MHz IF = 0.01 mA and 1.0 mA f = 100 MHz *The 1N5767 has the additional specifications: τ = 1.0 msec minimum IR = 1 µA maximum at VR = 50 V VF = 1 V maximum at IF = 100 mA. 3 Typical Parameters at TA = 25°C (unless otherwise noted) 100 IF – FORWARD CURRENT (mA) 5082-3001, 3039, 3077, 3080 IN5719 10,000 100,000 RF RESISTANCE (OHMS) 10 100 5082-3001 5082-3039 5082-3077 IN5719 RF RESISTANCE (OHMS) 1000 10,000 1000 5082-3081 1 125°C 25°C –60°C 10 100 5082-3080 5082-3379 0.1 1 10 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.001 0.01 0.1 1 10 100 1 0.001 0.01 0.1 1 10 100 VF – FORWARD VOLTAGE (V) IF – FORWARD BIAS CURRENT (mA) IF – FORWARD BIAS CURRENT (mA) Figure 1. Forward Current vs. Forward Voltage. Figure 2. Typical RF Resistance vs. Forward Bias Current. Figure 3. Typical RF Resistance vs. Forward Bias Current. 1.0 2.5 REVERSE RECOVERY TIME (ns) 1000 5082-3001 3039 3077 IN5719 2.0 CAPACITANCE (pF) CAPACITANCE (pF) 1.5 .5 5082-3039 IN5719 5082-3001 100 VR = 5 V VR = 10V VR = 20V 1.0 5082-3188 .5 5082-3080 5082-3081 5082-3379 0 0 10 20 30 40 50 60 70 REVERSE VOLTAGE (V) 0 0 10 20 30 40 10 0 10 20 30 FORWARD CURRENT (mA) 50 60 70 REVERSE VOLTAGE (V) Figure 4. Typical Capacitance vs. Reverse Voltage. Figure 5. Typical Capacitance vs. Reverse Voltage. Figure 6. Typical Reverse Recovery Time vs. Forward Current for Various Reverse Driving Voltages. 0 BELOW FIRST ORDER (dB) 20 BELOW FIRST ORDER (dB) 10 dB Bridged Tee Attenuator 40 dB mV Output Levels One Input Frequency Fixed 100 MHz 10 20 30 40 50 60 70 PIN Diode Cross Modulation 10 dB Bridged Tee Attenuator Unmodulated Frequency 100 MHz 100% Modulation 15 kHz 40 dB mV Output Levels 40 5082-3080 5082-3379 60 5082-3080 5082-3379 80 5082-3081 5082-3081 100 0 10 20 30 40 50 60 70 80 FREQUENCY (MHz) 80 0 10 20 30 40 50 60 70 80 MODULATED FREQUENCY (MHz) Figure 7. Typical Second Order Intermodulation Distortion. Figure 8. Typical Cross Intermodulation Distortion. Diode Package Marking 1N5xxx 5082-xxxx would be marked: 1Nx xx xxx xx YWW YWW where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part number. Y is the last digit of the calendar year. WW is the work week of manufacture. Examples of diodes manufactured during workweek 45 of 1999: 1N5712 5082-3080 would be marked: 1N5 30 712 80 945 945 www.semiconductor.agilent.com Data subject to change. Copyright © 2000 Agilent Technologies Obsoletes 5967-5812E 5968-7182E (1/00)