ABA-53563

Agilent ABA-53563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Features • Operating frequency: DC ~ 3.5 GHz • 21.5 dB gain • VSWR < 2.0 throughout operating frequency • 12.7 dBm output P1dB Description Agilent’s ABA-53563 is an economical, easy-to-use, internally 50-ohm matched silicon monolithic amplifier that offers excellent gain and flat broadband response from DC to 3.5 GHz. Packaged in an ultraminiature industry-standard SOT-363 package, it requires half the board space of a SOT-143 package. At 2 GHz, the ABA-53563 offers a small-signal gain of 21.5 dB, output P1dB of 12.7 dBm and 22.9 dBm output third order intercept point. It is suitable for use as buffer amplifiers for wideband applications. They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communications systems. ABA-53563 is fabricated using Agilent’s HP25 silicon bipolar process, which employs a doublediffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. Surface Mount Package SOT-363/SC70 • 3.5 dB noise figure • Unconditionally stable • Single 5V supply (Id = 46 mA) Applications • Amplifier for cellular, cordless, special mobile radio, PCS, ISM, wireless LAN, DBS, TVRO, and TV tuner applications Pin Connections and Package Marking GND 1 GND 2 Input Output & Vcc Note: Top View. Package marking provides orientation and identification. “x” is character to identify date code. Simplified Schematic Vcc RF Output & Vcc 3Hx GND 3 Vcc RF Input Ground 2 Ground 3 Ground 1 ABA-53563 Absolute Maximum Ratings [1] Symbol Vcc Pin Pdiss Tj TSTG Parameter Device Voltage, RF output to ground (T = 25°C) CW RF Input Power (Vcc = 5V) Total Power Dissipation [3] Junction Temperature Storage Temperature Units V dBm W °C °C Absolute Max. +7 +20 0.47 150 -65 to 150 Thermal Resistance[2] (Vcc = 5V) θjc = 117°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150°C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tb, is 25°C. Derate 8.5 mW/°C for Tb > 94.8°C. Electrical Specifications Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise. Symbol Gp[1] ∆Gp NF[1] P1dB[1] OIP3[1] VSWRin[1] VSWRout Icc[1] td[1] [1] Parameter and Test Condition Power Gain (|S21| ) Power Gain Flatness, Noise Figure Output Power at 1dB Gain Compression Output Third Order Intercept Point Input VSWR Output VSWR Device Current Group Delay f = 0.1 ~ 2.5 GHz f = 0.1 ~ 3.5 GHz 2 Units dB dB dB dBm dBm Min. 20 Typ. 21.5 0.6 2.7 3.5 12.7 22.9 1.1 1.2 Max. Std Dev. 0.2 4 0.11 0.14 0.14 mA ps 46 160 57 0.6 Notes: 1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. Cblock RF Output 3Hx RFC Vcc RF Input Cblock Cbypass Figure 1. ABA-53563 Production Test Circuit. 2 ABA-53563 Typical Performance Tc = +25°C, Zo = 50 Ω, Vcc = 5V unless stated otherwise. 24 24 4.5 22 22 4 GAIN (dB) GAIN (dB) 18 4.5V 5V 5.5V 18 -40°C +25°C +85°C NF (dB) 20 20 3.5 3 4.5V 5V 5.5V 16 16 2.5 14 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 14 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 2 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 2. Gain vs. Frequency and Voltage. Figure 3. Gain vs. Frequency and Temperature. Figure 4. Noise Figure vs. Frequency and Voltage. 20 5 18 4 14 16 P1dB (dBm) P1dB (dBm) 4.5V 5V 5.5V NF (dB) 12 3 10 8 -40°C +25°C +85°C 2 -40°C +25°C +85°C 6 4 1 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 2 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 0 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 5. Noise Figure vs. Frequency and Temperature. Figure 6. Output Power for 1 dB Gain Compression vs. Frequency and Voltage. Figure 7. Output Power for 1 dB Gain Compression vs. Frequency and Temperature. 3 ABA-53563 Typical Performance, continued Tc = +25°C, Zo = 50 Ω, Vcc = 5V unless stated otherwise. 35 30 25 OIP3 (dBm) 35 30 25 OIP3 (dBm) 4.5V 5V 5.5V 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) -40°C +25°C +85°C Figure 8. Output IP3 vs. Frequency and Voltage. Figure 9. Output IP3 vs. Frequency and Temperature. 2.0 1.8 1.6 VSWR IN VSWR OUT 80 70 60 -40°C +25°C -85°C Icc (mA) 0 1 2 3 4 5 6 50 40 30 VSWR 1.4 1.2 20 1.0 0.8 10 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) VOLTAGE (V) Figure 10. Input and Output VSWR vs. Frequency. Figure 11. Supply Current vs. Voltage and Temperature. 4 ABA-53563 Typical Scattering Parameters TC = +25°C, VCC = 5V, ZO = 50 Ω, unless stated otherwise Freq (GHz) 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.50 4.00 4.50 5.00 5.50 6.00 S11 Mag. 0.09 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.07 0.07 0.05 0.04 0.03 0.02 0.01 0.01 0.01 0.02 0.03 0.03 0.04 0.06 0.06 0.11 0.14 0.17 0.23 0.28 S11 Ang. 169.3 165.6 164.9 164.3 162.9 163.8 162.4 159.6 158.1 158.6 158.3 149.9 147.4 139.0 127.0 94.0 -22.9 -49.8 -83.6 -95.4 -112.0 -128.4 -146.0 -152.9 170.6 137.6 122.9 110.6 99.6 S21 dB 21.6 21.5 21.5 21.5 21.5 21.5 21.5 21.5 21.5 21.5 21.5 21.6 21.6 21.6 21.6 21.5 21.4 21.2 21.0 20.7 20.2 19.7 19.2 18.9 17.4 16.0 14.3 13.0 11.8 S21 Mag. 11.98 11.87 11.85 11.85 11.86 11.90 11.89 11.90 11.92 11.92 11.95 12.00 12.04 12.06 12.01 11.89 11.77 11.53 11.21 10.79 10.25 9.68 9.08 8.78 7.41 6.30 5.21 4.47 3.88 S21 Ang. -3.4 -5.9 -10.5 -15.4 -20.4 -25.5 -30.5 -35.6 -40.6 -45.7 -50.9 -61.3 -71.9 -83.0 -94.4 -105.8 -117.4 -129.2 -141.1 -153.1 -164.9 -176.1 173.1 167.7 143.3 120.2 99.1 80.1 63.4 S12 dB -29.4 -29.4 -29.6 -29.6 -29.9 -29.9 -29.9 -29.9 -29.9 -29.9 -29.9 -29.9 -29.6 -29.6 -29.4 -28.9 -29.6 -28.4 -28.0 -27.7 -27.5 -26.9 -26.6 -26.4 -25.8 -24.7 -23.9 -22.9 -22.0 S12 Mag. 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.06 0.06 0.07 0.08 S12 Ang. -0.6 -0.7 -0.8 -0.4 0.1 0.8 1.7 2.5 3.4 4.5 5.5 7.7 9.5 11.5 13.0 14.5 15.4 15.8 15.8 16.4 16.9 16.8 16.2 16.0 14.1 12.9 10.0 5.1 -0.2 S22 Mag. 0.12 0.12 0.12 0.11 0.11 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.09 0.09 0.09 0.09 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.09 0.08 0.05 0.04 0.04 S22 Ang. -2.3 -5.8 -11.7 -16.5 -20.5 -23.8 -27.2 -30.9 -34.6 -36.7 -39.1 -41.7 -42.7 -43.3 -42.3 -38.8 -36.3 -34.4 -33.9 -33.7 -32.1 -28.9 -30.1 -30.9 -38.3 -41.5 -57.3 -82.0 -142.5 K Factor 1.414 1.424 1.458 1.458 1.491 1.489 1.490 1.490 1.488 1.489 1.487 1.483 1.448 1.446 1.420 1.374 1.356 1.348 1.327 1.338 1.362 1.348 1.364 1.373 1.477 1.505 1.612 1.624 1.656 5 Device Models Refer to Agilent’s web site www.agilent.com/view/rf Ordering Information Part Number ABA-53563-TR1 ABA-53563-TR2 ABA-53563-BLK Devices per Container 3000 10000 100 Container 7" reel 13" reel antistatic bag Package Dimensions Outline 63 (SOT-363/SC-70) 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.425 (0.017) TYP. 0.30 REF. 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 10° 0.30 (0.012) 0.10 (0.004) 0.20 (0.008) 0.10 (0.004) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6 Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm 3H 3H 3H 3H (Package marking example orientation shown.) Tape Dimensions and Product Orientation for Outline 63 P P0 D P2 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 8° MAX. K0 5° MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 8.00 ± 0.30 0.255 ± 0.013 5.4 ± 0.10 0.062 ± 0.001 3.50 ± 0.05 2.00 ± 0.05 SIZE (INCHES) 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 0.315 ± 0.012 0.010 ± 0.0005 0.205 ± 0.004 0.0025 ± 0.00004 0.138 ± 0.002 0.079 ± 0.002 PERFORATION CARRIER TAPE COVER TAPE DISTANCE 7 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2003 Agilent Technologies, Inc. Obsoletes 5988-8957EN April 29, 2003 5988-9179EN