AT-31625

4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz, Typ. • -31 dBc IMD3 @ Pout of 21 dBm per Tone, 900 MHz, Typ. • 50% Smaller than SOT-223 Package MSOP-3 Surface Mount Plastic Package Outline 25 Description Hewlett Packard’s AT-31625 is a low cost, NPN medium power silicon bipolar junction transistor housed in a miniature, MSOP-3 surface mount plastic package. The AT-31625 can be used as a driver device or an output device, depending on the specific application. The AT-31625 features +28 dBm CW output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT-31625 ideal for use in battery powered systems. The AT-31625 is fabricated with Hewlett Packard’s 10 GHz Ft SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. Pin Configuration COLLECTOR 4 Applications • Medium Power Driver Device for Cellular/PCS, ISM 900, WLAN • Output Power Device for ISM 900, Cordless, WLAN EMITTER 1 2 3 EMITTER BASE 4-43 5965-5911E AT-31625 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Units V V V mA W °C °C Absolute Maximum[1] 1.4 16.0 9.5 320 1.0 150 -65 to 150 Thermal Resistance[3]: θjc = 65°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 15.4 mW/°C for Tc > 85°C. Tc is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. Using the liquid crystal technique, VCE = 4.8 V, Ic =50 mA, Tj =150°C, 1-2 µm “hot-spot” resolution. Electrical Specifications, TC = 25°C Symbol Parameters and Test Conditions Freq. = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A, unless otherwise specified Units Min. Typ. Max. Pout ηC IMD3 Output Power [1] Collector Efficiency [1] 3rd Order Intermodulation Distortion, 2 Tone Test, Pout each Tone = +21 dBm [1] Mismatch Tolerance, No Damage [1] Pin = +19 dBm Pin = +19 dBm F1 = 899 MHz F2 = 901 MHz dBm % dBc +27.0 55 +28.0 70 -31 7:1 Pout = +28 dBm any phase, 2 sec duration IE = 0.2 mA, open collector IC = 1.0 mA, open emitter IC = 5.0 mA, open base V V V 1.4 16.0 9.5 BVEBO BVCBO BVCEO Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage hFE ICEO Forward Current Transfer Ratio Collector Leakage Current VCE = 3 V, IC = 180 mA VCEO = 5 V — µA 80 150 330 15 Note: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A. 4-44 AT-31625 Typical Performance, TC = 25°C Frequency = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A, unless otherwise specified. 31 29 OUTPUT POWER (dBm) COLLECTOR EFFICIENCY (%) COLLECTOR EFFICIENCY (%) Γ source = 0.73 ∠ -156 Γ load = 0.42 ∠ -179 100 90 80 70 60 32 30 OUTPUT POWER (dBm) Γ source = 0.73 ∠ -156 Γ load = 0.42 ∠ -179 100 90 80 70 60 50 40 30 12 Γ source = 0.73 ∠ -156 Γ load = 0.42 ∠ -179 27 25 23 21 19 17 15 13 11 2 4 6 Pout 28 26 24 22 20 18 16 14 12 6 8 10 12 14 16 18 20 22 INPUT POWER (dBm) 3.0 V 3.6 V 4.8 V 50 40 ηc 30 20 10 0 8 10 12 14 16 18 20 22 INPUT POWER (dBm) 3.0 V 3.6 V 4.8 V 14 16 18 20 22 INPUT POWER (dBm) Figure 1. Output Power and Collector Efficiency vs. Input Power. Figure 2. Output Power vs. Input Power Over Bias Voltage. Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage. Pin = +19 dBm 32 30 OUTPUT POWER (dBm) 28 26 IMD (dBc) OUTPUT POWER (dBm) -10 -15 -20 -25 -30 -35 TC = +85°C TC = +25°C TC = –40°C 6 8 10 12 14 16 18 20 22 -40 -45 -50 8 IMD5 10 12 14 16 18 20 22 24 IMD3 30.0 29.5 29.0 28.5 28.0 27.5 27.0 26.5 26.0 800 80 70 60 24 22 20 18 16 14 Pout 50 40 30 20 10 0 1000 840 880 920 960 INPUT POWER (dBm) OUTPUT POWER/TONE (dBm) FREQUENCY (MHz) Figure 4. Output Power vs. Input Power Over Temperature. Figure 5. IMD3, IMD5 vs. Output Power Per Tone. Figure 6. Output Power and Collector Efficiency vs. Frequency. Note: Tuned at 900 MHz, then Swept over Frequency. 0 -2 RETURN LOSS (dB) Γ source = 0.73 ∠ -156 Γ load = 0.42 ∠ -179 -4 -6 -8 -10 -12 Input R.L. -14 -16 -18 800 850 900 950 1000 Output R.L. FREQUENCY (MHz) Figure 7. Input and Output Return Loss vs. Frequency. 4-45 COLLECTOR EFFICIENCY (%) Γ source = 0.73 ∠ -156 Γ load = 0.42 ∠ -179 0 -5 31.0 Γ source = 0.73 ∠ -156 Γ load = 0.42 ∠ -179 30.5 Γ source = 0.73 ∠ -156 Γ load = 0.42 ∠ -179 ηc 100 90 AT-31625 Typical Large Signal Impedances VCE = 4.8 V, ICQ = 5 mA, Pout = +28.0 dBm Γ source Freq. MHz Mag. Ang. 800 0.661 -149.0 825 0.679 -150.6 850 0.697 -152.4 875 0.712 -154.2 900 0.727 -155.8 925 0.740 -157.5 950 0.754 -159.0 975 0.767 -160.4 1000 0.777 -162.1 Γ Mag. 0.382 0.394 0.403 0.412 0.422 0.426 0.432 0.437 0.438 load 5.5 5.0 4.5 Ang. -171.3 -172.8 -174.6 -176.5 -179.0 179.3 177.2 174.9 172.5 Ccb (pF) 4.0 3.5 3.0 2.5 2.0 0 2 4 6 8 10 Vcb (V) Figure 8. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). SPICE Model Parameters Die Model CPad C CPad B CPad Lb1 B 0.2 Ω Lb2 Rb2 B E1 C E2 Cce Lc1 C Packaged Model Cbc Die Die Area = 1.2 CPad = 0.43 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR Value 150 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 0.9886 Cbe E1 Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB IRB RBM RE RC Value 1E-9 1.11 3.598E-15 3 1.4E-12 0.4776 0.2508 0.001 0.999 5.06E-12 1.148 0.5965 0.752 0 0.01 2.488 1.288 E2 0.2 Ω Label Cbc Cbe Cce Lb1 Lb2 Rb2 Le1 Lc1 Value 0.009 pF 1.20 pF 0.48 pF 1.53 nH 0.045 nH 0.1 Ω 0.38 nH 0.47 nH Le1 E 4-46 AT-31625 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω VCE = 3.0 V, Ic = 200 mA, Tc = 25°C Freq. S11 GHz Mag. Ang. dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.72 0.77 0.79 0.79 0.79 0.79 0.79 0.79 0.79 0.79 0.79 0.79 0.79 -150 -166 179 169 161 156 153 146 140 133 126 120 114 S21 Mag. 34.19 18.43 7.54 3.81 2.58 2.17 1.97 1.61 1.37 1.21 1.09 1.00 0.93 Ang. 113 99 86 74 65 59 56 48 40 32 26 19 13 dB -34.0 -34.0 -28.0 -23.1 -20.9 -19.2 -18.4 -16.5 -14.9 -13.6 -12.8 -11.7 -11.1 S12 Mag. 0.02 0.02 0.04 0.07 0.09 0.11 0.12 0.15 0.18 0.21 0.23 0.26 0.28 S22 Ang. 40 42 57 64 63 62 61 58 54 49 45 41 36 Mag. 0.56 0.52 0.51 0.51 0.52 0.52 0.52 0.53 0.54 0.54 0.55 0.55 0.56 Ang. -120 -148 -169 -178 177 175 174 170 167 164 160 156 152 30.7 25.3 17.5 11.6 8.2 6.7 5.9 4.1 2.7 1.7 0.7 0.0 -0.6 VCE = 3.6 V, Ic = 200 mA, Tc = 25°C 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.71 0.76 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 -148 -165 180 169 161 156 153 146 140 133 127 121 115 31.2 25.9 18.1 12.2 8.8 7.3 6.4 4.7 3.3 2.1 1.3 0.4 -0.2 36.39 19.69 8.06 4.07 2.75 2.31 2.10 1.71 1.46 1.28 1.16 1.05 0.98 114 100 86 75 65 60 56 48 40 33 26 19 13 -34.0 -34.0 -28.0 -24.4 -20.9 -19.2 -18.4 -16.5 -14.9 -14.0 -12.8 -11.7 -11.1 0.02 0.02 0.04 0.06 0.09 0.11 0.12 0.15 0.18 0.20 0.23 0.26 0.28 41 43 57 64 64 62 61 58 54 50 46 41 37 0.56 0.51 0.50 0.50 0.51 0.51 0.51 0.52 0.53 0.54 0.54 0.55 0.55 -117 -146 -168 -177 178 176 174 171 168 164 161 157 153 VCE = 4.8 V, Ic = 200 mA, Tc = 25°C 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.70 0.75 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.77 -145 -164 -180 169 161 157 154 147 140 134 127 121 115 31.7 26.4 18.7 12.7 9.3 7.8 7.0 5.2 3.8 2.6 1.7 0.9 0.3 38.47 20.90 8.57 4.33 2.92 2.45 2.23 1.81 1.54 1.35 1.22 1.11 1.03 115 100 87 75 66 60 57 48 41 33 27 20 13 -34.0 -34.0 -28.0 -24.4 -20.9 -19.2 -18.4 -16.5 -14.9 -14.0 -12.8 -12.0 -11.1 0.02 0.02 0.04 0.06 0.09 0.11 0.12 0.15 0.18 0.20 0.23 0.25 0.28 41 43 57 64 64 62 61 58 54 50 46 41 37 0.56 0.50 0.49 0.49 0.49 0.50 0.50 0.51 0.51 0.52 0.53 0.54 0.54 -114 -144 -167 -176 179 176 175 172 168 165 162 158 154 Typical Performance 35 30 25 GAIN (dB) GAIN (dB) 35 MSG 30 25 MAG 20 15 10 5 0 0.25 0.75 1.00 1.50 2.00 2.50 -5 0.05 0.25 0.75 1.00 1.50 2.00 2.50 |S21|2 MSG MSG 35 MSG 30 MAG GAIN (dB) 25 20 15 10 5 0 0.05 MAG 20 15 10 |S21|2 5 0 -5 0.05 MSG |S21|2 MSG 0.25 0.75 1.00 1.50 2.00 2.50 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 3.0V, Ic = 200 mA. Figure 10. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 3.6V, Ic = 200 mA. 4-47 Figure 11. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 4.8V, Ic = 200 mA. AT-31625 Typical Performance, TC = 25°C Frequency = 1800 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit B, unless otherwise specified. 35 30 OUTPUT POWER (dBm) 25 20 15 10 5 0 0 4 8 12 16 20 INPUT POWER (dBm) Pout 30 70 60 50 40 COLLECTOR EFFICIENCY (%) 0 Γ source = 0.75 ∠ -135 Γ load = 0.39 ∠ -179 -5 RETURN LOSS (dB) Γ source = 0.75 ∠ -135 Γ load = 0.39 ∠ -179 -10 Output R.L. -15 Input R.L. -20 ηc 20 10 0 24 -25 1700 1750 1800 1850 1900 FREQUENCY (MHz) Figure 12. Output Power and Collector Efficiency vs. Input Power. Figure 13. Input and Output Return Loss vs. Frequency. AT-31625 Typical Large Signal Impedances VCE = 4.8 V, ICQ = 15 mA, Pout = +25.0 dBm Γ source Freq. MHz Mag. Ang. 1700 0.717 -131.8 1725 0.724 -132.6 1750 0.732 -133.4 1775 0.743 -134.3 1800 0.752 -135.4 1825 0.763 -136.3 1850 0.773 -137.0 1875 0.780 -137.8 1900 0.788 -138.7 Γ Mag. 0.373 0.378 0.381 0.386 0.390 0.394 0.397 0.401 0.403 load Ang. -174.3 -175.6 -176.7 -177.9 -179.1 179.5 178.4 177.1 175.7 4-48 Test Circuit A: Test Circuit Board Layout @ 900 MHz VBB VBB R2 R1 T1 R3 C2 C3 L1 R4 L2 R5 C6 C5 C8 C9 9/96 VCC VCC C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 6.8 pF 100.0 nF 100.0 pF 2.7 pF 1.5 µF 10.0 µF 100.0 pF 2.2 Ω 750.0 Ω 2.2 Ω 10.0 Ω 10.0 Ω MBT 2222A 18.0 µH 18.0 µH 38.1 (1.5) C1 C4 C7 C10 INPUT PA3 DEMO 76.2 (3.0) B–MFG0141 OUTPUT CW Test VCE = 4.8 V ICQ = 5.0 mA Freq. = 900 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz VBB CW Test VCE = 4.8 V ICQ = 5.0 mA Freq. = 900 MHz VCC 2.2 Ω B DC C E Transistor 750 Ω 2.2 Ω 10 Ω 100 nF 10 Ω 100 pF 80 Ω λ/4 @ 900 MHz 100 pF 80 Ω λ/4 @ 900 MHz 50 Ω 100 pF RF OUT = 19.91 (.784) 2.7 pF 100 nF 1.5 µF 10 µF 18 µH 18 µH 100 pF RF IN 6.8 pF 50 Ω = 5.38 (.212) 4-49 Test Circuit B: Test Circuit Board Layout @ 1800 MHz VBB VBB R2 R1 T1 VCC C5 L1 R4 L2 R5 C8 C9 9/96 C3 VCC R3 38.1 (1.5) C2 C7 C1 C4 C6 C10 INPUT PA3 DEMO 76.2 (3.0) B–MFG0141 OUTPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 3.0 pF 100.0 nF 1.4 pF 100.0 pF 1.5 µF 10.0 µF 100.0 pF 2.2 Ω 350.0 Ω 2.2 Ω 10.0 Ω 10.0 Ω MBT 2222A 18.0 µH 18.0 µH CW Test VCE = 4.8 V ICQ = 15.0 mA Freq. = 1800 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit B: Test Circuit Schematic Diagram @ 1800 MHz VBB CW Test VCE = 4.8 V ICQ = 15.0 mA Freq. = 1800 MHz VCC 2.2 Ω B DC C E Transistor 350 Ω 2.2 Ω 10 Ω 100 nF 10 Ω 100 pF 80 Ω λ/4 @ 1800 MHz 100 pF 80 Ω 100 nF 1.5 µF 10 µF 18 µH 18 µH λ/4 @ 1800 MHz 50 Ω 100 pF RF OUT = 10.49 (.413) 1.4 pF 100 pF RF IN 3.0 pF 50 Ω = 0.89 (.035) 4-50 Part Number Ordering Information Part Number AT-31625-TR1 AT-31625-BLK No. of Devices 1000 25 Container 7" Reel Carrier Tape Package Dimensions MSOP-3 Surface Mount Plastic Package 3.12/3.23 (.123/.127) R 0.25 (.010) MAX 0.18/0.25 (.007/.010) SEE DETAIL A 4.62/5.03 (.182/.198) 0.76 REF (.030) 2.64/2.82 (.104/.111) 0.51 (.020) DIA X 0.15 (.006) DEEP REF PIN 1 0.76 REF (.030) 1.91 (.075) BASIC 4.80/5.00 (.189/.197) TOP VIEW 1.09/1.42 (.043/.056) 1.22/1.60 (.048/.063) SEATING PLANE 0.58/0.69 (.023/.027) SIDE VIEW LEAD TIP COPLANARITY 0.10 (.004) 0.10/0.25 (.004/.010) R 0.20 (.008) MIN R 0.20/0.33 (.008/.013) 0.25 (.010) GAUGE PLANE SEATING PLANE 0° MIN/8° MAX 0.41/0.86 (.016/.034) DETAIL A NOTE: DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 4-51 Tape Dimensions and Product Orientation for Package MSOP-3 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE 2.00 ± 0.05 (.079 ± .002) 1.75 (.069) 1.5 (.059) 4.0 (.157) 0.30 ± 0.05 (.012 ± .002) 5.50 ± 0.05 (.217 ± .002) 12.0 ± 0.3 5.2 (.472 ± .012) (.205) R 0.3 (.012) R 0.5 (.020) TYP 8.0 (.315) 1.5 (.059) 5.2 (.205) 1.75 (.069) NOTES: 1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2. TOLERANCES: .X ± 0.1 (.XXX ± .004) 4-52