AT-32011

Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA AT-32033: 1 dB NF, 12.5 dB GA • Characterized for End-OfLife Battery Use (2.7 V) • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available[1] Description Hewlett Packard’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3 lead SOT-23, while the AT-320 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2.7 V, 2 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett Packard’s 10 GHz f t, 30 GHz f MAX SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. Outline Drawing EMITTER COLLECTOR 320 BASE EMITTER SOT-143 (AT-32011) COLLECTOR 320 BASE EMITTER SOT-23 (AT-32033) Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.” 4-53 5965-8920E AT-32011, AT-32033 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2, 3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 11 5.5 32 200 150 -65 to 150 Thermal Resistance[2]: θjc = 550 °C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TMounting Surface = 25°C. 3. Derate at 1.82 mW/ °C for TC > 40°C. Electrical Specifications, TA = 25°C AT-32011 Symbol NF GA hFE ICBO IEBO Parameters and Test Conditions Noise Figure VCE = 2.7 V, IC = 2 mA Associated Gain VCE = 2.7 V, IC = 2 mA f = 0.9 GHz f = 0.9 GHz Units dB dB – µA µA 12.5[1] 70 Min. Typ. 1.0[1] 14[1] 300 0.2 1.5 Max. 1.3[1] 11[2] 70 Min. AT-32033 Typ. 1.0[2] 12.5[2] 300 0.2 1.5 Max. 1.3[2] Forward Current Transfer Ratio VCE = 2.7 V, IC = 2 mA Collector Cutoff Current VCB = 3 V Emitter Cutoff Current VEB = 1 V Notes: 1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB. 2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB. 1000 pF VBB W = 10 L = 1870 W = 30 L = 60 W = 30 L = 60 VCC W = 10 L = 1870 1000 pF CKT A: 25 Ω CKT B: 5 Ω RF OUT RF IN W = 10 CKT A: L = 380 CKT B: L = 380 TEST CIRCUIT BOARD MATL = 0.062" FR-4 (ε = 4.8) CKT A: W = 30 L = 50 x 2 CKT B: W = 30 L = 60 W = 10 CKT A: L = 105 CKT B: L = 850 NOT TO SCALE DIMENSIONS IN MILS Figure 1. Test Circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. 4-54 Characterization Information, TA = 25°C AT-32011 Symbol P1dB G1dB IP3 |S21|E2 Parameters and Test Conditions Power at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz Gain at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz Output Third Order Intercept Point (opt tuning) VCE = 2.7 V, IC = 20 mA f = 0.9 GHz Gain in 50 Ω System VCE = 2.7 V, IC = 2 mA f = 0.9 GHz Units dBm dB dBm dB Typ. 13 16.5 24 13 AT-32033 Typ. 13 15 24 11.5 2 25 20 20 NOISE FIGURE (dB) 1.5 Ga (dB) Ga (dB) 15 15 1 1 mA 2 mA 5 mA 10 mA 20 mA 10 1 mA 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 10 1 mA 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 0.5 5 5 0 0 0.5 1 1.5 2 2.5 0 0 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 2. AT-32011 and AT-32033 Minimum Noise Figure vs. Frequency and Current at VCE = 2.7 V. Figure 3. AT-32011 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. Figure 4. AT-32033 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. 20 20 20 15 15 15 G 1dB (dB) 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 P 1dB (dBm) 10 G 1dB (dB) 10 10 5 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 5 5 0 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 -5 0 0 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 2.7 V. Figure 6. AT-32011 1 dB Compressed Gain vs. Frequency and Current at VCE = 2.7 V. Figure 7. AT-32033 1 dB Compressed Gain vs. Frequency and Current at VCE = 2.7 V. 4-55 AT-32011, AT-32033 Typical Performance 20 20 20 15 15 15 G 1dB (dB) 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 P 1dB (dBm) 10 G 1dB (dB) 10 10 5 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 0 5 5 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 -5 0 0 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 8. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 5 V. Figure 9. AT-32011 1 dB Compressed Gain vs. Frequency and Current at VCE = 5 V. Figure 10. AT-32033 1 dB Compressed Gain vs. Frequency and Current at VCE = 5 V. 10 7.5 5 2.5 0 -2.5 -5 G 1dB (dB) 2 mA 5 mA 20 20 15 P 1dB (dBm) G 1dB (dB) 15 10 10 5 2 mA 5 mA 5 2 mA 5 mA 0 0.5 1.0 1.5 2.0 2.5 0 0 0.5 1.0 1.5 2.0 2.5 0 0 0.5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 11. AT-32011 and AT-32033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 1 V. Figure 12. AT-32011 1 dB Compressed Gain vs. Frequency and Current at VCE = 1 V. Figure 13. AT-32033 1 dB Compressed Gain vs. Frequency and Current at VCE = 1 V. 25 2.5 25 2.5 25 20 Ga 2.0 20 2.0 20 NOISE FIGURE (dB) Ga 10 NF 5 0.5 1.0 10 NF 5 IP3 (dBm) Ga (dBm) Ga (dBm) 15 1.5 15 1.5 NOISE FIGURE (dB) 15 1.0 10 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 0.5 5 0 -50 0 50 0 100 0 -50 0 50 0 100 0 TEMPERATURE (°C) TEMPERATURE (°C) FREQUENCY (MHz) Figure 14. AT-32011 Noise Figure and Associated Gain at VCE = 2 .7 V, IC = 2 mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded). Figure 15. AT-32033 Noise Figure and Associated Gain at VCE = 2 .7 V, IC = 2 mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded). Figure 16. AT-32011 and AT-32033 Third Order Intercept vs. Frequency and Bias at VCE = 2 .7 V, with Optimal Tuning. 4-56 AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.97 0.88 0.78 0.75 0.67 0.63 0.61 0.59 0.59 0.63 0.69 S11 Ang -11 -52 -86 -94 -127 -144 -155 -175 157 120 94 dB 11.09 10.13 8.67 8.35 6.35 5.25 4.75 3.48 1.77 -0.39 -2.39 S21 Mag 3.59 3.21 2.71 2.62 2.08 1.83 1.73 1.49 1.23 0.96 0.76 Ang 172 141 117 112 89 77 70 57 40 18 0 dB -33.55 -20.85 -17.62 -17.27 -16.30 -16.28 -16.42 -16.86 -17.89 -18.40 -15.60 S12 Mag 0.021 0.091 0.132 0.137 0.153 0.154 0.151 0.144 0.128 0.120 0.166 25 VCE = 1 V, IC = 1 mA S22 Ang 83 59 41 37 23 16 13 9 8 23 35 Mag 0.99 0.92 0.82 0.79 0.71 0.67 0.65 0.62 0.61 0.59 0.59 Ang -5 -21 -32 -35 -45 -50 -53 -59 -68 -84 -104 AT-32011 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA Freq. GHz 0.5[1] 0.9 1.8 2.4 Fmin dB 0.42 0.71 1.37 1.80 Mag 0.79 0.70 0.53 0.55 GAIN (dB) Γopt Ang 26 54 119 158 15 Rn – 0.44 0.35 0.18 0.08 MSG MAG 5 S21 -5 0 1 2 3 4 5 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. FREQUENCY (GHz) Figure 17. AT-32011 Gains vs. Frequency at VCE = 1 V, IC = 1 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.97 0.81 0.61 0.56 0.41 0.36 0.34 0.34 0.38 0.46 0.51 S11 Ang -11 -52 -87 -95 -136 -160 -177 154 119 81 56 dB 11.09 9.88 8.07 7.65 5.43 4.30 3.74 2.49 0.96 -0.84 -1.90 S21 Mag 3.58 3.12 2.53 2.41 1.87 1.64 1.54 1.33 1.12 0.91 0.80 Ang 170 134 107 101 77 66 59 47 32 15 5 dB -32.75 -20.30 -17.57 -17.24 -16.61 -16.36 -16.05 -15.10 -12.77 -8.68 -5.68 S12 Mag 0.023 0.097 0.132 0.137 0.148 0.152 0.158 0.176 0.230 0.368 0.520 25 VCE = 1 V, IC = 1 mA S22 Ang 83 60 46 44 39 41 44 49 55 50 37 Mag 0.99 0.90 0.78 0.76 0.68 0.65 0.63 0.61 0.59 0.56 0.51 Ang -5 -22 -33 -35 -42 -46 -49 -55 -65 -87 -114 AT-32033 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA Freq. GHz 0.5[1] 0.9 1.8 2.4 Fmin dB 0.42 0.71 1.37 1.80 Mag 0.87 0.73 0.42 0.50 GAIN (dB) Γopt Ang 25 55 143 -162 Rn – 0.48 0.34 0.11 0.07 15 MSG MAG 5 S21 MSG -5 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 3 4 5 FREQUENCY (GHz) 4-57 Figure 18. AT-32033 Gains vs. Frequency at VCE = 1 V, I C = 1 mA. AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.94 0.80 0.67 0.64 0.55 0.51 0.50 0.48 0.49 0.54 0.61 S11 Ang -13 -60 -97 -104 -137 -154 -165 176 150 116 92 dB 16.67 15.10 12.97 12.48 10.04 8.77 8.13 6.75 4.97 2.73 0.83 S21 Mag 6.81 5.69 4.45 4.21 3.18 2.75 2.55 2.18 1.77 1.37 1.10 Ang 170 136 112 107 86 76 70 58 43 22 4 dB -35.25 -23.07 -20.34 -20.05 -19.21 -19.04 -18.99 -18.84 -18.52 -16.98 -14.50 S12 Mag 0.017 0.070 0.096 0.099 0.110 0.112 0.112 0.114 0.119 0.142 0.188 30 VCE = 2.7 V, IC = 2 mA S22 Ang 82 57 41 39 30 28 27 27 30 36 37 Mag 0.99 0.86 0.73 0.70 0.61 0.58 0.56 0.54 0.52 0.50 0.50 Ang -6 -24 -35 -37 -45 -49 -52 -57 -64 -77 -95 AT-32011 Typical Noise Parameters, GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag 0.5[1] 0.9 1.8 2.4 0.57 0.78 1.25 1.57 0.69 0.60 0.42 0.44 Ang 22 51 117 159 Rn – 0.30 0.25 0.14 0.08 20 MSG MAG S21 10 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 2.7 V, IC = 2 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.93 0.68 0.44 0.39 0.23 0.18 0.16 0.17 0.22 0.32 0.40 S11 Ang -13 -56 -86 -93 -129 -156 -176 146 108 76 56 dB 16.61 14.29 11.48 10.88 8.16 6.89 6.19 4.91 3.35 1.51 0.17 S21 Mag 6.77 5.18 3.75 3.50 2.56 2.21 2.04 1.76 1.47 1.19 1.02 Ang 167 127 101 96 76 66 60 50 36 18 4 dB -34.89 -23.10 -20.35 -19.91 -17.99 -16.89 -16.14 -14.70 -12.51 -9.19 -6.54 S12 Mag 0.018 0.070 0.096 0.101 0.126 0.143 0.156 0.184 0.237 0.347 0.471 30 Figure 19. AT-32011 Gains vs. Frequency at VCE = 2.7 V, I C = 2 mA. S22 Ang 82 61 55 54 55 57 57 58 57 51 40 Mag 0.99 0.83 0.71 0.70 0.64 0.62 0.61 0.60 0.58 0.55 0.51 Ang -6 -22 -30 -31 -36 -39 -42 -47 -56 -73 -95 AT-32033 Typical Noise Parameters, GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag 0.5[1] 0.9 1.8 2.4 0.57 0.78 1.25 1.57 0.77 0.63 0.32 0.40 Ang 15 49 136 -159 Rn – 0.36 0.28 0.10 0.08 20 MSG MAG S21 MSG 10 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 3 4 5 FREQUENCY (GHz) 4-58 Figure 20. AT-32033 Gains vs. Frequency at VCE = 2 .7 V, IC = 2 mA. AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.52 0.36 0.34 0.34 0.34 0.34 0.35 0.36 0.39 0.45 0.52 S11 Ang -49 -138 -168 -174 165 155 148 136 120 98 82 dB 31.08 22.96 18.33 17.46 14.13 12.61 11.74 10.23 8.38 6.00 4.25 S21 Mag 35.79 14.06 8.25 7.47 5.09 4.27 3.86 3.25 2.62 2.00 1.63 Ang 149 102 86 83 71 64 60 52 40 23 7 dB -37.78 -28.93 -25.15 -24.41 -21.35 -19.92 -19.08 -17.60 -15.86 -13.68 -11.93 S12 Mag 0.013 0.036 0.055 0.060 0.086 0.101 0.111 0.132 0.161 0.207 0.253 30 VCE = 2.7 V, IC = 20 mA S22 Ang 72 62 64 64 63 61 60 57 51 42 32 MSG Mag 0.83 0.40 0.31 0.30 0.28 0.28 0.27 0.27 0.26 0.24 0.23 Ang -22 -42 -42 -42 -45 -49 -52 -58 -67 -84 -106 AT-32011 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA Freq. GHz 0.5[1] 0.9 1.8 2.4 Fmin dB 1.39 1.51 1.78 1.96 Mag 0.15 0.14 0.28 0.40 GAIN (dB) Γopt Ang 65 105 -164 -142 Rn – 0.16 0.13 0.12 0.13 20 MAG S21 10 MSG Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 21. AT-32011 Gains vs. Frequency at VCE = 2.7 V, I C = 20 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.50 0.16 0.08 0.07 0.06 0.07 0.08 0.11 0.15 0.21 0.26 S11 Ang -35 -52 -36 -31 12 31 40 48 53 52 48 dB 29.84 19.58 14.81 13.96 10.71 9.31 8.50 7.16 5.62 3.86 2.61 S21 Mag 31.03 9.53 5.50 4.99 3.43 2.92 2.66 2.28 1.91 1.56 1.35 Ang 137 94 81 78 66 60 56 48 37 20 6 dB -37.08 -25.35 -20.63 -19.66 -16.31 -14.75 -13.85 -12.32 -10.49 -8.11 -6.34 S12 Mag 0.014 0.054 0.093 0.104 0.153 0.183 0.203 0.242 0.299 0.393 0.482 VCE = 2.7 V, IC = 20 mA S22 Ang 77 77 75 74 69 66 63 59 52 41 29 30 MSG Mag 0.79 0.53 0.50 0.50 0.49 0.48 0.47 0.46 0.43 0.39 0.33 Ang -18 -20 -24 -25 -31 -35 -38 -44 -54 -71 -91 AT-32033 Typical Noise Parameters, GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA Γopt Freq. Fmin GHz dB Mag 0.5[1] 0.9 1.8 2.4 1.39 1.51 1.78 1.96 0.15 0.12 0.28 0.46 Ang 45 100 -135 -107 Rn – 0.28 0.22 0.14 0.22 20 MAG 10 S21 MSG 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 3 4 5 FREQUENCY (GHz) 4-59 Figure 22. AT-32033 Gains vs. Frequency at VCE = 2 .7 V, IC = 20 mA. AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.95 0.81 0.68 0.64 0.55 0.51 0.49 0.47 0.47 0.52 0.59 S11 Ang -13 -57 -93 -100 -133 -150 -161 180 153 118 94 dB 16.65 15.18 13.16 12.69 10.31 9.05 8.43 7.06 5.29 3.07 1.17 S21 Mag 6.80 5.74 4.55 4.31 3.28 2.84 2.64 2.25 1.84 1.42 1.14 Ang 170 137 113 109 88 78 71 60 45 24 6 dB -35.84 -23.56 -20.72 -20.42 -19.49 -19.29 -19.22 -19.03 -18.72 -17.19 -14.73 S12 Mag 0.016 0.066 0.092 0.095 0.106 0.109 0.109 0.112 0.116 0.138 0.183 30 VCE = 5 V, IC = 2 mA S22 Ang 82 58 43 40 32 29 28 29 31 37 38 Mag 0.99 0.87 0.74 0.72 0.63 0.60 0.58 0.55 0.54 0.52 0.51 Ang -6 -23 -34 -36 -43 -47 -50 -55 -62 -75 -92 AT-32011 Typical Noise Parameters, GAIN (dB) Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag 0.5[1] 0.9 1.8 2.4 0.52 0.75 1.26 1.60 0.73 0.63 0.44 0.45 Ang 20 49 111 153 Rn – 0.34 0.28 0.16 0.09 20 MSG 10 S21 MAG 0 Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 1 2 3 4 5 FREQUENCY (GHz) Figure 23. AT-32011 Gains vs. Frequency at VCE = 5 V, I C = 2 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.94 0.69 0.45 0.40 0.23 0.17 0.15 0.14 0.20 0.31 0.38 S11 Ang -13 -54 -82 -89 -121 -147 -167 151 109 76 55 dB 16.56 14.34 11.62 11.03 8.33 7.04 6.36 5.06 3.52 1.66 0.26 S21 Mag 6.73 5.21 3.81 3.56 2.61 2.25 2.08 1.79 1.50 1.21 1.03 Ang 167 128 102 98 77 68 62 51 37 19 5 dB -35.39 -23.74 -20.92 -20.35 -18.49 -17.39 -16.59 -15.14 -12.92 -9.55 -6.80 S12 Mag 0.017 0.065 0.090 0.096 0.119 0.135 0.148 0.175 0.226 0.333 0.457 30 VCE = 5 V, IC = 2 mA S22 Ang 82 62 56 55 56 58 59 60 59 53 42 Mag 0.99 0.85 0.73 0.72 0.66 0.65 0.63 0.62 0.61 0.59 0.55 Ang -5 -21 -28 -30 -35 -37 -40 -44 -53 -70 -90 AT-32033 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 5 V, IC = 2 mA Freq. GHz 0.5[1] 0.9 1.8 2.4 Fmin dB 0.52 0.75 1.26 1.60 Mag 0.79 0.65 0.33 0.39 GAIN (dB) Γopt Ang 15 48 127 -166 Rn – 0.42 0.30 0.11 0.07 20 MSG MAG 10 S21 MSG Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) 4-60 Figure 24. AT-32033 Gains vs. Frequency at VCE = 5 V, I C = 2 mA. AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.58 0.35 0.31 0.30 0.29 0.30 0.30 0.32 0.35 0.41 0.48 S11 Ang -43 -128 -161 -167 170 158 151 138 121 98 83 dB 31.28 23.51 18.93 18.06 14.74 13.22 12.35 10.85 8.99 6.64 4.90 S21 Mag 36.64 14.99 8.84 8.00 5.46 4.58 4.15 3.49 2.82 2.15 1.76 Ang 151 103 87 84 72 65 61 53 42 25 9 dB -38.13 -29.05 -25.30 -24.57 -21.50 -20.06 -19.23 -17.77 -16.03 -13.85 -12.12 S12 Mag 0.012 0.035 0.054 0.059 0.084 0.099 0.109 0.129 0.158 0.203 0.248 30 VCE = 5 V, IC = 20 mA S22 Ang 72 62 64 64 63 61 60 57 52 42 33 MSG Mag 0.83 0.42 0.33 0.32 0.30 0.29 0.29 0.28 0.27 0.25 0.24 Ang -21 -40 -40 -40 -44 -47 -50 -56 -64 -80 -100 AT-32011 Typical Noise Parameters, Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA Γopt Freq. Fmin GHz dB Mag 0.5[1] 0.9 1.8 2.4 1.38 1.50 1.78 1.96 0.18 0.15 0.23 0.34 Rn – 0.20 0.16 0.13 0.12 20 Ang 50 88 176 -156 GAIN (dB) MAG S21 10 MSG Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 25. AT-32011 Gains vs. Frequency at VCE = 5 V, IC = 20 mA. AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.55 0.20 0.13 0.12 0.10 0.09 0.10 0.11 0.13 0.18 0.22 S11 Ang -31 -44 -31 -28 -7 5 13 25 36 42 43 dB 30.00 19.91 15.15 14.30 11.03 9.63 8.82 7.49 5.93 4.19 2.98 S21 Mag 31.61 9.90 5.72 5.19 3.56 3.03 2.76 2.37 1.98 1.62 1.41 Ang 138 95 82 79 68 61 57 50 39 23 8 dB -37.72 -25.85 -21.01 -20.18 -16.77 -15.19 -14.33 -12.77 -10.90 -8.50 -6.65 S12 Mag 0.013 0.051 0.089 0.098 0.145 0.174 0.192 0.230 0.285 0.376 0.465 30 VCE = 5 V, IC = 20 mA S22 Ang 78 77 75 74 69 66 64 60 54 43 31 Mag 0.81 0.56 0.53 0.53 0.52 0.51 0.50 0.49 0.47 0.42 0.37 Ang -16 -19 -22 -23 -30 -33 -36 -42 -51 -67 -86 AT-32033 Typical Noise Parameters, GAIN (dB) Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA Γopt Freq. Fmin GHz dB Mag 0.5[1] 0.9 1.8 2.4 1.38 1.50 1.78 1.96 0.25 0.19 0.21 0.39 Ang 35 85 -150 -114 Rn – 0.30 0.23 0.14 0.19 20 MAG 10 S21 MSG Note: 1. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) 4-61 Figure 26. AT-32033 Gains vs. Frequency at VCE = 5 V, I C = 20 mA. Ordering Information Part Number AT-32011-BLK AT-32011-TR1 AT-32033-BLK AT-32033-TR1 Increment 100 3000 100 3000 Comments Bulk 7" Reel Bulk 7" Reel Package Dimensions SOT-143 Plastic Package 0.92 (0.036) 0.78 (0.031) PACKAGE MARKING CODE E C XXX B 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) TOP VIEW 3.06 (0.120) 2.80 (0.110) 1.02 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) SIDE VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.69 (0.027) 0.45 (0.018) END VIEW 0.15 (0.006) 0.09 (0.003) E 0.54 (0.021) 0.37 (0.015) 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083) SOT-23 Plastic Package 1.02 (0.040) 0.89 (0.035) 0.54 (0.021) 0.37 (0.015) C PACKAGE MARKING CODE B 0.60 (0.024) 0.45 (0.018) XXX E 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083) 2.04 (0.080) 1.78 (0.070) TOP VIEW 3.06 (0.120) 2.80 (0.110) 1.02 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) SIDE VIEW 0.152 (0.006) 0.066 (0.003) 0.69 (0.027) 0.45 (0.018) END VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-62