AT-41411-TR1

Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 7.0 GHz Typical fT • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Description Hewlett-Packard’s AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41411 is housed in a low cost low parasitic 4 lead SOT-143 surface mount package. The SOT-143 is an industry standard and is compatible with high volume surface mount assembly techniques. The 4 micron emitter- to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω in the 1 to 2 GHz frequency range, makes this device easy to use as a low noise amplifier. The AT-41411 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. SOT-143 Plastic Pin Connections INPUT GND 414 VCC OUTPUT Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices”. 4-109 5965-8924E AT-41411 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 20 12 50 225 150 -65 to 150 Thermal Resistance [2,4]: θjc = 550°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 1.8 mW/°C for TC > 26°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Part Number Ordering Information Part Number AT-41411-TR1 AT-41411-BLK Increment 3000 100 Comments Reel Bulk Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”. Electrical Specifications, TA = 25°C Symbol |S21E|2 P1 dB G1 dB NFO Parameters and Test Conditions[1] Insertion Power Gain; VCE = 8 V, IC = 20 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 20 mA 1 dB Compressed Gain; VCE = 8 V, IC = 20 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB Min. 14.5 Typ. Max. 16.5 11.0 17.0 13.0 1.4 1.8 3.5 18.0 13.0 9.0 7.0 30 150 270 0.2 1.0 GA Gain @ NFO; VCE = 8 V, IC = 10 mA dB fT hFE ICBO IEBO Gain Bandwidth Product: VCE = 8 V, IC = 20 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V GHz — µA µA Notes: 1. Refer to PACKAGING Section, “Tape-and-Reel Packaging for Semiconductor Devices.” 4-110 AT-41411 Typical Performance, TA = 25°C 24 21 18 GA 16 14 12 20 GA 16 |S21E|2 GAIN (dB) 1.0 GHz GAIN (dB) 12 9 GAIN (dB) 15 12 2.0 GHz 10 4 8 NFO (dB) NFO (dB) 6 3 0 0.5 NFO 4 2 2.0 3.0 4.0 0 NFO 2 0 4 4.0 GHz 1.0 0 10 20 IC (mA) 30 0 0 10 20 IC (mA) 30 FREQUENCY (GHz) Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC=10mA. Figure 2. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V, f = 2.0 GHz. Figure 3. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 40 35 30 MSG GAIN (dB) 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) |S21E|2 MAG Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 20 mA. 4-111 AT-41411 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .85 -30 27.3 23.20 158 0.5 .58 -112 21.7 12.18 109 1.0 .49 -156 16.5 6.70 85 1.5 .49 178 13.2 4.58 71 2.0 .50 160 10.8 3.45 59 2.5 .53 153 9.0 2.82 53 3.0 .55 142 7.5 2.37 43 3.5 .56 133 6.1 2.02 33 4.0 .56 121 4.9 1.76 23 dB -37.7 -29.1 -27.2 -25.0 -23.4 -22.5 -21.0 -19.8 -18.8 S12 Mag. .013 .035 .044 .056 .068 .075 .089 .102 .115 S22 Ang. 64 44 43 47 47 56 54 52 49 Mag. .93 .62 .50 .46 .45 .43 .43 .44 .46 Ang. -11 -30 -33 -36 -41 -43 -53 -63 -73 AT-41411 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 20 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .65 -46 30.4 33.07 150 0.5 .46 -137 22.4 13.21 100 1.0 .43 -175 16.7 6.85 80 1.5 .44 163 13.3 4.63 67 2.0 .47 148 10.8 3.47 56 2.5 .50 140 9.0 2.82 50 3.0 .53 132 7.5 2.36 40 3.5 .55 122 6.1 2.02 30 4.0 .56 112 4.8 1.74 19 A model for this device is available in the DEVICE MODELS section. dB -40.0 -32.0 -28.4 -26.4 -24.2 -22.9 -20.7 -19.6 -18.3 S12 Mag. .010 .025 .038 .048 .062 .071 .092 .105 .122 S22 Ang. 59 56 58 61 61 60 61 57 53 Mag. .89 .57 .52 .51 .50 .47 .46 .45 .45 Ang. -15 -26 -29 -32 -37 -39 -48 -60 -73 AT-41411 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.3 1.3 1.4 1.8 3.5 Γopt Mag .12 .10 .07 .09 .31 Ang 4 23 57 -158 -87 RN/50 0.17 0.17 0.16 0.16 0.38 4-112 SOT-143 Plastic Dimensions 0.92 (0.036) 0.78 (0.031) PACKAGE MARKING CODE E C XXX B 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) TOP VIEW 3.06 (0.120) 2.80 (0.110) 1.02 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) SIDE VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.69 (0.027) 0.45 (0.018) END VIEW 0.15 (0.006) 0.09 (0.003) E 0.54 (0.021) 0.37 (0.015) 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083) 4-113