ATF-10236-STR

0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 Features • Low Noise Figure: 0.8 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS = 20 mA • High Associated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 20.0 dBm Typical P1dB at 4 GHz • Cost Effective Ceramic Microstrip Package • Tape-And-Reel Packaging Option Available [1] Description The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25°C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 80 70 -3.0 12.0 Min. Typ. Max. 0.6 0.8 1.0 16.5 13.0 10.5 20.0 12.0 140 130 -1.3 180 -0.8 1.0 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression VDS = 4 V, IDS = 70 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA Transconductance: VDS = 2 V, VGS = 0 V Saturated Drain Current: VDS = 2 V, VGS = 0 V Pinchoff Voltage: VDS = 2 V, IDS = 1 mA Note: 1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.” 5965-8697E 5-26 ATF-10236 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Units V V V mA mW °C °C Absolute Maximum[1] + 5 -4 -7 IDSS 430 175 175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 2.9 mW/°C for TCASE > 25°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: θjc = 350°C/W; TCH = 150°C 1µm Spot Size[5] Part Number Ordering Information Part Number ATF-10236-TR1 ATF-10236-STR Devices Per Reel 1000 10 Reel Size 7" STRIP For more information, see “Tape and Reel Packaging for Semiconductor Devices.” ATF-10236 Noise Parameters: VDS = 2 V, IDS = 25 mA Freq. GHz 0.5 1.0 2.0 4.0 6.0 8.0 NFO dB 0.45 0.5 0.6 0.8 1.0 1.3 Γopt Mag 0.93 0.87 0.73 0.45 0.42 0.49 Ang 18 36 74 148 -137 -80 RN/50 0.75 0.63 0.33 0.15 0.12 0.45 ATF-10236 Typical Performance, TA = 25°C 18 15 GA (dB) 16 14 GA 30 GA (dB) 25 20 GAIN (dB) MSG 2.0 1.5 NFO (dB) GA 12 9 12 10 15 |S21|2 1.5 NFO (dB) 1.0 0.5 0 2.0 NFO 6 1.0 0.5 0 NFO 10 5 0 0.5 MAG 4.0 6.0 8.0 10.0 12.0 0 10 20 30 IDS (mA) 40 50 60 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2V, IDS = 25 mA, TA = 25°C. Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2V, f = 4.0 GHz. Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 25 mA. 5-27 Typical Scattering Parameters, Common Source, Z O = 50 Ω, TA = 25°C, VDS = 2 V, IDS = 25 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .97 .93 .77 .59 .48 .46 .53 .62 .71 .75 .78 .82 .84 Ang. -20 -41 -81 -114 -148 166 125 96 73 54 39 26 12 dB 15.1 14.9 13.6 12.2 10.9 9.6 8.5 6.9 4.9 3.3 2.1 0.3 -0.5 S21 Mag. 5.68 5.58 4.76 4.06 3.51 3.03 2.65 2.22 1.75 1.47 1.28 1.04 0.95 Ang. 162 143 107 80 52 26 1 -20 -39 -55 -72 -86 -101 dB -32.8 -26.0 -21.3 -18.4 -16.5 -15.3 -14.5 -14.4 -14.5 -14.7 -14.9 -14.9 -15.0 S12 Mag. .023 .050 .086 .120 .149 .172 .189 .191 .189 .184 .180 .179 .177 S22 Ang. 76 71 51 35 18 3 -14 -28 -41 -46 -59 -71 -82 Mag. .47 .45 .36 .30 .23 .10 .09 .24 .37 .46 .51 .54 .54 Ang. -11 -23 -38 -51 -67 -67 48 55 51 42 34 26 17 A model for this device is available in the DEVICE MODELS section. 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 4 DRAIN 3 0.508 (0.020) 2.11 (0.083) DIA. GATE 1 102 2 2.54 (0.100) SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.15 ± 0.05 (0.006 ± 0.002) 0.56 (0.022) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 5-28