ATF-13736-STR

2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features • Low Noise Figure: 1.8 dB Typical at 12 GHz • High Associated Gain: 9.0 dB Typical at 12 GHz • High Output Power: 17.5 dB Typical at 12 GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available[1] Description The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 36 micro-X Package 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25°C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f =12.0 GHz f = 12.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 25 40 -4.0 Min. Typ. Max. 1.5 1.8 2.1 11.5 9.0 7.0 17.5 8.5 55 50 -1.5 90 -0.5 2.2 GA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA 8.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression: VDS = 4 V, IDS = 40 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA Transconductance: VDS = 2.5 V, VGS = 0 V Saturated Drain Current: VDS = 2.5 V, VGS = 0 V Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”. 5-39 5965-8722E ATF-13736 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Units V V V mA mW °C °C Absolute Maximum[1] + 5 -4 -6 IDSS 225 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 2.5 mW/°C for TCASE > 85°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: θjc = 400°C/W; TCH = 150°C 1 µm Spot Size[5] Part Number Ordering Information Part Number ATF-13736-TR1 ATF-13736-STR Devices Per Reel 1000 10 Reel Size 7" strip ATF-13736 Noise Parameters: VDS = 2.5 V, IDS = 20 mA Freq. GHz 4.0 6.0 8.0 12.0 14.0 NFO dB 1.1 1.3 1.5 1.8 2.1 Γopt Mag .71 .55 .46 .50 .52 Ang 102 147 -144 -40 -2 RN/50 .10 .07 .19 .88 1.17 ATF-13736 Typical Performance, TA = 25°C 16 14 GA 25 25 12 10 GA (dB) 20 MSG 20 MSG GAIN (dB) 15 MAG GAIN (dB) 15 MAG MSG |S21|2 2.0 NFO (dB) 8 6 NFO 1.5 1.0 0.5 0 6.0 8.0 10.0 10 |S21|2 10 5 5 12.0 14.0 16.0 0 2.0 4.0 6.0 8.0 10.0 12.0 16.0 0 2.0 4.0 6.0 8.0 10.0 12.0 16.0 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2.5V, IDS = 20 mA, TA = 25°C. Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA. Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA. 5-40 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 2.5 V, IDS = 20 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .94 .86 .84 .77 .68 .59 .54 .56 .58 .60 .64 .68 .70 .72 .74 Ang. -46 -70 -90 -110 -135 -170 149 112 86 63 39 20 9 -1 -17 dB 11.0 10.2 9.8 9.6 9.9 9.9 9.5 8.8 8.1 7.6 7.0 6.4 6.0 5.2 4.6 S21 Mag. 3.56 3.23 3.08 3.02 3.14 3.13 2.99 2.75 2.53 2.41 2.24 2.08 1.99 1.83 1.70 Ang. 128 109 91 69 51 24 -1 -22 -43 -66 -90 -106 -130 -145 -177 dB -26.4 -25.2 -23.1 -20.9 -19.3 -18.0 -17.6 -16.9 -16.4 -16.5 -17.1 -17.6 -18.0 -18.2 -18.4 S12 Mag. .048 .055 .070 .090 .109 .126 .132 .143 .152 .149 .140 .132 .126 .123 .120 S22 Ang. 55 40 31 18 7 -12 -27 -43 -58 -73 -81 -90 -97 -111 -129 Mag. .59 .57 .56 .52 .47 .39 .30 .19 .11 .09 .15 .19 .19 .15 .11 Ang. -36 -47 -55 -63 -75 -92 -112 -121 -140 92 47 21 -3 -26 -34 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 4 V, IDS = 40 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .88 .76 .68 .56 .42 .37 .47 .57 .63 .69 .77 .82 .85 .83 .81 Ang. -44 -68 -90 -113 -145 161 116 90 70 51 33 21 13 1 -17 dB 13.5 13.0 12.4 12.0 11.8 11.5 10.5 9.4 8.9 7.9 7.1 6.0 5.4 4.8 4.4 S21 Mag. 4.73 4.47 4.19 4.00 3.90 3.74 3.36 2.96 2.77 2.47 2.26 2.00 1.86 1.73 1.65 Ang. 130 107 86 66 44 20 -3 -23 -41 -63 -82 -101 -117 -134 -154 dB -26.4 -24.9 -22.5 -21.0 -19.8 -18.6 -17.9 -17.2 -17.4 -17.7 -18.0 -18.6 -19.2 -19.7 -19.8 S12 Mag. .048 .057 .075 .089 .102 .117 .128 .138 .135 .131 .126 .118 .110 .104 .102 S22 Ang. 64 52 39 32 21 9 -5 -19 -28 -39 -52 -65 -75 -83 -103 Mag. .67 .61 .57 .52 .44 .31 .17 .05 .06 .17 .26 .35 .39 .41 .42 Ang. -28 -39 -46 -52 -61 -75 -95 -143 128 100 75 62 54 49 41 A model for this device is available in the DEVICE MODELS section. 5-41 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 4 DRAIN 3 0.508 (0.020) 2.11 (0.083) DIA. GATE 1 137 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 2 2.54 (0.100) 0.56 (0.022) 0.15 ± 0.05 (0.006 ± 0.002) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 5-42