ATF-21186-TR1

ATF-21186-TR1

  • 厂商:

    HP

  • 封装:

  • 描述:

    ATF-21186-TR1 - 0.5-6 GHz General Purpose Gallium Arsenide FET - Agilent(Hewlett-Packard)

  • 详情介绍
  • 数据手册
  • 价格&库存
ATF-21186-TR1 数据手册
0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Features • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to “Tape-and-Reel Packaging for Surface Mount Semiconductors”. 30 Description Hewlett–Packard’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over the VHF, UHF, and microwave frequency ranges. High gain with two volt operation makes this part attractive for low voltage, battery operated systems. The low noise figure is appropriate for commercial systems demanding good sensitivity, such as GPS receiver front-ends and MMDS television receivers. The output power is sufficient for use as the driver stage in many hand-held transceivers operating in the 900 MHz through 2.4 GHz bands, including in cellular phones, PCN, and ISM band spread spectrum applications. 85 mil Plastic Surface Mount Package Pin Configuration 4 SOURCE 211 GATE DRAIN 1 3 2 SOURCE 20 GAIN (dB) MSG MAG 10 S 21 0 0.1 1 FREQUENCY (GHz) 10 This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. ATF-21186 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 15 mA. 5-49 5965-8716E ATF-21186 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation[2,3] Channel Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 5 -4 -6 IDSS 400 150 -65 to +150 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TCASE = 25oC (TCASE is defined to be the temperature at the ends of pins 2 and 4 where they contact the circuit board). 3. Derate at 4.4 mW/oC for TC > 60 oC. Thermal Resistance[2]: θjc = 225°C/W ATF-21186 Electrical Specifications, TA = 25°C Symbol NFo Parameters and Test Conditions Optimum Noise Figure VDS = 2 V, IDS = 15 mA Associated Gain VDS = 2 V, IDS = 15 mA Power at 1 dB Gain Compression VDS = 3 V, IDS = 70 mA 1 dB Compressed Gain VDS = 3 V, IDS = 70 mA Transconductance Saturated Drain Current Pinchoff Voltage f = 1 GHz f = 2 GHz f = 4 GHz f = 1 GHz f = 2 GHz f = 4 GHz f = 1 GHz f = 2 GHz f = 4 GHz f = 1 GHz f = 2 GHz f = 4 GHz VDS = 3 V, VGS = 0 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 1 mA Units dB Min. Typ. 0.4 0.5 0.6 12.0 dBm 14.2 12.6 9.1 19.0 19.0 18.0 18.0 14.0 8.5 70 80 -3.0 120 120 -1.5 200 -0.8 Max. 0.75 GA dB P1 dB G1 dB dB gm IDSS VP mS mA V 5-50 ATF-21186 Typical Performance, TA = 25°C 1.5 NFO GA 1.0 20 30 20 18 16 GA GA (dB) 2.0 1.5 1.0 NF 0.5 14 12 GA (dB) 30 30 0.5 10 mA 15 mA 20 mA 0 0.1 1 FREQUENCY (GHz) 10 NF (dB) P 1 dB (dBm) NF O (dB) 10 G 1 dB 10 0 10 0 0 10 20 30 I DS(mA) 40 50 60 0 0.1 1 FREQUENCY (GHz) 0 10 Figure 1. ATF-21186 Optimum Noise Figure and Associated Gain vs. Frequency and IDS, VDS = 2 V. Figure 2. ATF-21186 Optimum Noise Figure and Associated Gain vs. IDS, f = 2 GHz, V DS = 2 V. Figure 3. ATF-21186 Power Output at 1 dB Compression and 1 dB Compressed Gain vs. Frequency. VDS = 3 V, I DS = 70 mA. 30 30 30 MSG 20 20 MSG 20 GAIN (dB) GAIN (dB) GAIN (dB) MSG S 21 MAG 10 MAG S 21 10 S 21 MAG 10 0 0.1 1 FREQUENCY (GHz) 10 0 0.1 1 FREQUENCY (GHz) 10 0 0.1 1 FREQUENCY (GHz) 10 Figure 4. ATF-21186 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 10 mA. Figure 5. ATF-21186 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 20 mA. Figure 6. ATF-21186 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 70 mA. 5-51 G1 dB (dB) 20 P 1 dB 20 ATF-21186 Typical Scattering Parameters, Common Source, Zo = 50 Ω, VDS = 2 V, IDS = 10 mA Freq. S11 S21 (GHz) Mag. Ang. dB Mag. Ang. 0.5 0.961 -25 11.12 3.599 157 1.0 0.910 -49 10.60 3.388 137 1.5 0.851 -73 9.96 3.149 118 2.0 0.794 -95 9.27 2.906 100 2.5 0.743 -118 8.53 2.671 83 3.0 0.694 -139 7.71 2.429 67 3.5 0.659 -160 6.85 2.201 52 4.0 0.643 180 5.97 1.989 37 4.5 0.643 161 5.05 1.789 24 5.0 0.658 143 4.12 1.606 11 5.5 0.682 128 3.16 1.438 -1 6.0 0.707 115 2.19 1.286 -12 6.5 0.735 104 1.25 1.155 -23 7.0 0.758 95 0.32 1.038 -33 7.5 0.780 86 -0.59 0.934 -42 8.0 0.801 77 -1.49 0.842 -51 Note: 1. Gmax = MAG for K ≥ 1 and Gmax = MSG for K < 1 dB -25.85 -20.36 -17.66 -16.03 -15.04 -14.52 -14.29 -14.29 -14.38 -14.66 -14.94 -15.29 -15.55 -15.81 -15.97 -16.08 S12 Mag. 0.051 0.096 0.131 0.158 0.177 0.188 0.193 0.193 0.191 0.185 0.179 0.172 0.167 0.162 0.159 0.157 Ang. 71 57 43 31 19 9 -1 -9 -17 -24 -29 -34 -38 -41 -44 -47 S22 Mag. Ang. 0.376 -25 0.360 -50 0.339 -73 0.314 -95 0.291 -118 0.272 -143 0.270 -169 0.290 167 0.324 148 0.367 133 0.410 121 0.453 111 0.490 102 0.526 94 0.559 85 0.595 78 K — 0.22 0.27 0.33 0.40 0.47 0.57 0.66 0.75 0.83 0.90 0.95 1.00 1.02 1.05 1.08 1.08 Gmax[1] (dB) 18.5 15.5 13.8 12.6 11.8 11.1 10.6 10.1 9.7 9.4 9.0 8.7 7.5 6.7 6.0 5.6 ATF-21186 Typical Noise Parameters, Common Source, Zo = 50 Ω, VDS = 2 V, ID = 10 mA Frequency GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Fmin dB 0.37 0.41 0.45 0.49 0.53 0.57 0.61 0.65 0.69 0.73 0.77 0.81 0.85 0.89 0.93 0.97 Γopt Mag. Ang. 0.95 11 0.89 25 0.84 42 0.79 60 0.74 79 0.71 100 0.68 120 0.66 142 0.64 162 0.65 -175 0.68 -155 0.73 -139 0.77 -123 0.81 -111 0.84 -98 0.86 -88 Rn/50 — 1.738 0.819 0.553 0.387 0.265 0.179 0.111 0.057 0.028 0.021 0.042 0.095 0.202 0.362 0.596 0.873 Ga dB 13.8 12.3 11.4 11.1 10.4 10.0 9.2 8.7 7.9 7.4 7.1 6.6 6.4 6.1 5.8 5.4 5-52 ATF-21186 Typical Scattering Parameters, Common Source, Zo = 50 Ω, VDS = 2 V, IDS = 15 mA Freq. S11 S21 (GHz) Mag. Ang. dB Mag. Ang. 0.5 0.957 -27 12.56 4.248 156 1.0 0.898 -53 11.95 3.959 136 1.5 0.833 -77 11.19 3.627 116 2.0 0.772 -100 10.37 3.300 99 2.5 0.721 -123 9.52 2.992 82 3.0 0.675 -145 8.59 2.689 66 3.5 0.646 -165 7.65 2.413 51 4.0 0.636 175 6.71 2.164 37 4.5 0.642 156 5.74 1.936 24 5.0 0.660 139 4.76 1.730 11 5.5 0.685 124 3.78 1.545 0 6.0 0.712 112 2.80 1.380 -11 6.5 0.739 102 1.86 1.239 -21 7.0 0.762 92 0.94 1.114 -31 7.5 0.783 84 0.04 1.005 -40 8.0 0.803 75 -0.84 0.908 -49 Note: 1. Gmax = MAG for K ≥ 1 and Gmax = MSG for K < 1 dB -26.38 -21.11 -18.42 -16.89 -15.86 -15.34 -15.04 -14.90 -14.90 -14.99 -15.09 -15.24 -15.39 -15.49 -15.55 -15.60 S12 Mag. 0.048 0.088 0.120 0.143 0.161 0.171 0.177 0.180 0.180 0.178 0.176 0.173 0.170 0.168 0.167 0.166 Ang. 71 57 44 32 22 12 3 -4 -11 -17 -23 -27 -32 -36 -39 -44 S22 Mag. Ang. 0.303 -28 0.291 -57 0.277 -82 0.261 -106 0.251 -132 0.247 -158 0.261 177 0.292 156 0.334 139 0.380 125 0.424 114 0.466 106 0.502 97 0.537 89 0.567 81 0.601 74 K — 0.22 0.29 0.37 0.45 0.53 0.63 0.73 0.81 0.88 0.94 0.98 1.01 1.03 1.04 1.06 1.06 Gmax[1] (dB) 19.5 16.5 14.8 13.6 12.7 12.0 11.3 10.8 10.3 9.9 9.4 8.5 7.6 6.9 6.3 5.9 ATF-21186 Typical Noise Parameters, Common Source, Zo = 50 Ω, VDS = 2 V, ID = 15 mA Frequency GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Fmin dB 0.35 0.39 0.43 0.46 0.50 0.54 0.57 0.61 0.64 0.68 0.72 0.75 0.79 0.83 0.86 0.90 Γopt Mag. Ang. 0.950 13 0.870 27 0.810 45 0.760 63 0.710 82 0.670 102 0.635 121 0.614 143 0.605 165 0.612 -172 0.650 -152 0.696 -136 0.742 -121 0.782 -109 0.810 -96 0.840 -86 Rn/50 — 1.633 0.639 0.420 0.302 0.209 0.138 0.088 0.047 0.025 0.022 0.042 0.088 0.174 0.301 0.471 0.715 Ga dB 15.8 14.2 13.4 12.6 11.7 10.8 9.8 9.1 8.5 8.0 7.6 7.2 7.0 6.6 6.3 6.0 5-53 ATF-21186 Typical Scattering Parameters, Common Source, Zo = 50 Ω, VDS = 2 V, IDS = 20 mA Freq. S11 S21 (GHz) Mag. Ang. dB Mag. Ang. 0.5 0.955 -29 13.44 4.698 156 1.0 0.888 -55 12.75 4.340 134 1.5 0.819 -80 11.91 3.938 115 2.0 0.756 -104 11.00 3.547 97 2.5 0.704 -127 10.07 3.186 80 3.0 0.662 -149 9.07 2.840 65 3.5 0.638 -170 8.07 2.532 50 4.0 0.633 171 7.07 2.257 37 4.5 0.643 153 6.07 2.012 24 5.0 0.663 136 5.07 1.793 12 5.5 0.690 122 4.07 1.597 0 6.0 0.717 110 3.08 1.425 -10 6.5 0.744 100 2.14 1.280 -20 7.0 0.767 91 1.22 1.151 -29 7.5 0.788 83 0.34 1.040 -38 8.0 0.807 74 -0.54 0.940 -47 Note: 1. Gmax = MAG for K ≥ 1 and Gmax = MSG for K < 1 dB -26.75 -21.51 -18.86 -17.33 -16.36 -15.76 -15.39 -15.19 -15.14 -15.09 -15.14 -15.19 -15.24 -15.29 -15.29 -15.34 S12 Mag. 0.046 0.084 0.114 0.136 0.152 0.163 0.170 0.174 0.175 0.176 0.175 0.174 0.173 0.172 0.172 0.171 Ang. 71 57 44 33 23 14 6 -1 -7 -13 -19 -24 -28 -33 -37 -41 S22 Mag. Ang. 0.251 -32 0.246 -63 0.240 -91 0.233 -117 0.233 -143 0.242 -169 0.266 168 0.304 148 0.349 133 0.397 121 0.441 111 0.482 103 0.517 95 0.550 87 0.579 79 0.611 72 K — 0.23 0.31 0.40 0.49 0.58 0.67 0.77 0.85 0.91 0.96 0.99 1.01 1.02 1.04 1.04 1.05 Gmax[1] (dB) 20.1 17.1 15.4 14.2 13.2 12.4 11.7 11.1 10.6 10.1 9.6 8.4 7.7 7.1 6.5 6.1 ATF-21186 Typical Noise Parameters, Common Source, Zo = 50 Ω, VDS = 2 V, ID = 20 mA Frequency GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Fmin dB 0.33 0.37 0.41 0.45 0.48 0.52 0.56 0.59 0.63 0.67 0.70 0.74 0.78 0.81 0.85 0.89 Γopt Mag. Ang. 0.95 13 0.88 28 0.82 46 0.77 64 0.70 83 0.65 103 0.62 123 0.60 146 0.59 168 0.60 -170 0.64 -150 0.68 -134 0.73 -118 0.77 -107 0.80 -96 0.83 -84 Rn/50 — 1.543 0.659 0.423 0.294 0.191 0.124 0.079 0.042 0.024 0.023 0.044 0.089 0.176 0.289 0.446 0.654 Ga dB 16.1 14.6 13.8 12.8 12.0 11.0 10.0 9.4 8.7 8.2 7.7 7.3 7.0 6.6 6.3 5.9 5-54 ATF-21186 Typical Scattering Parameters, Common Source, Zo = 50 Ω, VDS = 3 V, IDS = 70 mA Freq. S11 S21 (GHz) Mag. Ang. dB Mag. Ang. 0.5 0.933 -34 17.12 7.181 152 1.0 0.841 -65 16.05 6.348 129 1.5 0.755 -92 14.80 5.493 109 2.0 0.688 -117 13.54 4.755 91 2.5 0.643 -140 12.33 4.135 75 3.0 0.613 -161 11.14 3.607 61 3.5 0.601 179 10.01 3.167 47 4.0 0.608 161 8.94 2.799 35 4.5 0.628 145 7.89 2.480 23 5.0 0.657 130 6.85 2.201 11 5.5 0.689 116 5.84 1.959 0 6.0 0.720 106 4.85 1.748 -10 6.5 0.750 96 3.90 1.567 -19 7.0 0.774 88 2.98 1.410 -29 7.5 0.797 80 2.08 1.271 -38 8.0 0.817 72 1.22 1.151 -46 Note: 1. Gmax = MAG for K ≥ 1 and Gmax = MSG for K < 1 dB -28.64 -23.74 -21.21 -19.74 -18.64 -17.92 -17.33 -16.77 -16.36 -16.03 -15.76 -15.60 -15.39 -15.24 -15.09 -14.99 S12 Mag. 0.037 0.065 0.087 0.103 0.117 0.127 0.136 0.145 0.152 0.158 0.163 0.166 0.170 0.173 0.176 0.178 Ang. 71 57 46 38 30 23 17 11 6 0 -5 -11 -16 -21 -26 -31 S22 Mag. Ang. 0.240 -34 0.222 -66 0.204 -93 0.188 -118 0.182 -145 0.186 -171 0.209 165 0.247 146 0.293 131 0.342 120 0.390 110 0.434 103 0.474 95 0.510 87 0.542 79 0.578 72 K — 0.28 0.41 0.53 0.64 0.73 0.82 0.91 0.96 0.99 1.02 1.02 1.03 1.02 1.01 1.01 1.00 Gmax[1] (dB) 22.9 19.9 18.0 16.6 15.5 14.5 13.7 12.9 12.1 10.7 9.9 9.2 8.9 8.4 8.1 8.1 ATF-21186 Typical Noise Parameters, Common Source, Zo = 50 Ω, VDS = 3 V, ID = 70 mA Frequency GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Fmin dB 0.40 0.44 0.49 0.54 0.59 0.63 0.68 0.73 0.78 0.82 0.87 0.92 0.97 1.01 1.06 1.11 Γopt Mag. Ang. 0.94 16 0.84 34 0.74 53 0.67 72 0.61 92 0.57 115 0.55 137 0.54 162 0.55 -175 0.59 -155 0.63 -136 0.68 -121 0.73 -109 0.78 -98 0.82 -87 0.85 -78 Rn/50 — 1.510 0.565 0.322 0.223 0.153 0.098 0.060 0.034 0.029 0.045 0.092 0.167 0.282 0.466 0.738 1.089 Ga dB 19.5 18.0 16.5 15.0 13.7 12.7 11.7 11.0 10.3 9.6 9.2 8.7 8.4 8.0 7.6 7.3 5-55 Part Number Ordering Information Part Number ATF-21186-TR1 ATF-21186-STR Devices per Reel 1000 10 Reel Size 7"' strip 85 mil Plastic Surface Mount Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) 4 211 45° 1 C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 2.67 ± 0.38 (0.105 ± 0.15) 5° TYP. 0.203 ± 0.051 (0.006 ± 0.002) 1.52 ± 0.25 (0.060 ± 0.010) 0.66 ± 0.013 (0.026 ± 0.005) 0.30 MIN (0.012 MIN) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 5-56
ATF-21186-TR1
1. 物料型号: - ATF-21186

2. 器件简介: - ATF-21186是惠普公司生产的一款低成本砷化镓肖特基栅场效应晶体管,封装在表面贴装塑料包中。这款通用设备适用于VHF、UHF和微波频段的低噪声放大器、增益级、驱动放大器和振荡器。高增益和两伏特操作使其成为低电压、电池供电系统的优选。低噪声系数适合商业系统,如GPS接收器前端和MMDS电视接收器。输出功率足以用作许多在900MHz至2.4GHz频段运行的手持收发器的驱动级,包括蜂窝电话、PCN和ISM频段扩展频谱应用。

3. 引脚分配: - 该GaAs FET器件的栅极长度为0.3微米,使用空气桥互连连接漏极手指。总栅极周长为750微米。

4. 参数特性: - 低噪声系数:2GHz时典型值为0.5dB。 - 高输出功率:2GHz时典型值为19dBm。 - 高MSG:2GHz时典型值为13.5dB。 - 绝对最大额定值包括漏源电压、栅源电压、栅漏电压、漏电流和功耗等。

5. 功能详解: - ATF-21186的电气规格包括最优噪声系数、相关增益和1dB增益压缩功率等参数,这些参数随频率和工作条件变化。

6. 应用信息: - 适用于低噪声放大器、增益级、驱动放大器和振荡器等应用。

7. 封装信息: - 85 mil塑料表面贴装封装,PDF中提供了封装的尺寸图。
ATF-21186-TR1 价格&库存

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