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ATF-45101

ATF-45101

  • 厂商:

    HP

  • 封装:

  • 描述:

    ATF-45101 - 2-8 GHz Medium Power Gallium Arsenide FET - Agilent(Hewlett-Packard)

  • 数据手册
  • 价格&库存
ATF-45101 数据手册
2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G 1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic Stripline Package range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 2.5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance. 100 mil Flange Package Description The ATF-45101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency Electrical Specifications, TA = 25°C Symbol P1 dB G1 dB ηadd gm IDSS VP Parameters and Test Conditions Power Output @ 1 dB Gain Compression: VDS = 9 V, IDS = 250 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 250 mA Efficiency @ P1dB: VDS = 9 V, IDS = 250 mA Transconductance: VDS = 2.5 V, IDS = 250 mA Saturated Drain Current: VDS = 1.75 V, VGS = 0 V Pinch-off Voltage: VDS = 2.5 V, IDS = 12.5 mA f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 400 -5.4 Min. 28.0 9.0 Typ. Max. 29.0 28.0 10.0 4.0 38 200 600 -4.0 800 -2.0 5965-8736E 5-92 ATF-45101 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Units V V V mA W °C °C Absolute Maximum[1] +14 -7 -16 IDSS 3.6 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 24 mW/°C for TCASE > 24°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: θjc = 42°C/W; TCH = 150°C 1 µm Spot Size[4] ATF-45101 Typical Performance, TA = 25°C 30 20 35 30 20 29 P1 dB (dBm) P1 dB 25 15 G1 dB (dBm) POUT (dBm) 25 20 15 10 5 40 30 ηadd (%) GAIN (dB) MSG 15 28 G1 dB 10 10 |S21|2 MAG 27 5 20 10 0 0 5 10 15 PIN (dBm) 20 25 30 5 26 2.0 4.0 6.0 0 8.0 10.0 12.0 0 0 1.0 2.0 4.0 6.0 10.0 14.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression and 1 dB Compressed Gain vs. Frequency. VDS = 9V, IDS = 250 mA. Figure 2. Output Power and Power Added Efficiency vs. Input Power. VDS = 9 V, IDS = 250 mA, f = 4.0 GHz. Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 9 V, IDS = 250 mA. 5-93 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 9 V, IDS = 250 mA Freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Mag. .89 .83 .81 .84 .82 .81 .81 .81 .80 .79 .77 .73 .68 .64 S11 Ang. -88 -135 -158 -174 -170 152 133 122 113 107 94 82 69 56 dB 14.9 10.8 7.6 5.4 3.8 2.6 1.2 -0.3 -1.8 -3.2 -4.6 -5.8 -6.7 -7.1 S21 Mag. 5.54 3.48 2.40 1.86 1.55 1.36 1.15 .97 .81 .69 .59 .51 .46 .44 Ang. 119 82 58 38 18 -2 -25 -42 -60 -73 -91 -106 -123 -137 dB -26.2 -26.0 -25.8 -25.5 -25.2 -24.4 -23.9 -23.5 -22.6 -22.0 -21.5 -20.3 -18.3 -15.9 S12 Mag. .049 .050 .051 .053 .055 .060 .064 .067 .074 .079 .084 .097 .121 .161 S22 Ang. 43 18 7 3 -2 -8 -15 -20 -31 -40 -45 -55 -63 -79 Mag. .31 .33 .39 .46 .50 .52 .55 .59 .64 .68 .72 .76 .78 .80 Ang. -63 -108 -129 -144 -154 -168 173 154 137 123 113 99 89 79 A model for this device is available in the DEVICE MODELS section. 100 mil Flange Package Dimensions 4 GATE 1 .05 R, TYP 1.3 SOURCE DRAIN 3 .062 DIA. 1.57 (2) PLCS 2 SOURCE .03 0.8 .12 3.0 .42 .265 10.7 6.73 0.025 ± 0.003 mils 0.64 ± 0.08 mm .044 1.12 .100 2.54 .06 1.6 .300 min .004 ± .002 .10 ± .05 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 Package marking code is 451 5-94
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