ATF-511P8-TR2

Agilent ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Description Agilent Technologies’s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC [3]) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested. Note: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N. 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin Connections and Package Marking Pin 8 Pin 7 (Drain) Pin 6 Pin 5 • Excellent uniformity in product specifications Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Source (Thermal/RF Gnd) • Small package size: 2.0 x 2.0 x 0.75 mm • Point MTTF > 300 years [2] • MSL-1 and lead-free • Tape-and-reel packaging option available Bottom View Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Pin 8 1Px Top View Pin 7 (Drain) Pin 6 Pin 5 Specifications 2 GHz; 4.5V, 200 mA (Typ.) • 41.7 dBm output IP3 • 30 dBm output power at 1 dB gain compression • 1.4 dB noise figure • 14.8 dB gain • 12.1 dB LFOM [4] • 69% PAE Applications • Front-end LNA Q2 and Q3 driver or pre-driver amplifier for Cellular/ PCS and WCDMA wireless infrastructure • Driver amplifier for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-pHEMT for other high linearity applications Note: Package marking provides orientation and identification: “1P” = Device Code “x” = Date code indicates the month of manufacture. ATF-511P8 Absolute Maximum Ratings[1] Symbol VDS VGS VGD IDS IGS Pdiss Pin max. TCH TSTG θch_b Parameter Drain–Source Voltage[2] Gate–Source Voltage[2] Gate Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] RF Input Power[4] Channel Temperature Storage Temperature Thermal Resistance[5] Units V V V A mA W dBm °C °C °C/W Absolute Maximum 7 -5 to 1 -5 to 1 1 46 3 +30 150 -65 to 150 33 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25°C. Derate 30 mW/°C for TB > 50°C. 4. With 10 Ohm series resistor in gate supply and 3:1 VSWR. 5. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. 6. Device can safely handle +30dBm RF Input Power provided IGS limited to 46mA. IGS at P1dB drive level is bias circuit dependent. Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [6,7] 1000 900 800 700 0.8 V 240 200 0.7 V 200 Cpk = 1.66 Stdev = 0.6 160 Cpk = 3.24 Stdev = 0.15 160 120 0.6 V IDS (mA) 600 500 400 300 200 100 0 0 2 4 VDS (V) 6 8 0.5 V -3 Std +3 Std 120 -3 Std 80 +3 Std 80 40 0 40 35 38 41 OIP3 (dBm) 44 47 0 28 29 P1dB (dBm) 30 31 Figure 1. Typical I-V Curves (Vgs = 0.1 per step). Figure 2. OIP3 LSL = 38.5, Nominal = 41.7. Figure 3. P1dB LSL = 28.5, Nominal = 30. 150 Cpk = 1.4 Stdev = 0.31 160 Cpk = 3.03 Stdev = 1.85 120 120 90 -3 Std 60 40 +3 Std 80 -3 Std +3 Std 30 0 13 14 15 GAIN (dB) 16 17 0 52 57 62 67 PAE (%) 72 77 82 Figure 4. Gain LSL = 13.5, Nominal = 14.8, USL = 16.5. Figure 5. PAE LSL = 52, Nominal = 68.9. Notes: 6. Distribution data sample size is 400 samples taken from 4 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 2 ATF-511P8 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. Symbol Vgs Vth Idss Gm Parameter and Test Condition Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Vds = 4.5V, Ids = 200 mA Vds = 4.5V, Ids = 32 mA Vds = 4.5V, Vgs = 0V Vds = 4.5V, Gm = ∆Idss/∆Vgs; ∆Vgs = Vgs1 – Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V Vds = 0V, Vgs = -4.5V f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Offset BW = 5 MHz Offset BW = 10 MHz Units V V µA mmho Min. 0.25 — — — Typ. 0.51 0.28 16.4 2178 Max. 0.8 — — — Igss NF G OIP3 P1dB PAE ACLR Gate Leakage Current Noise Figure [1] µA dB dB dB dB dBm dBm dBm dBm % % dBc dBc -27 — — 13.5 — 38.5 — 28.5 — 52 — — — -2 1.4 1.2 14.8 17.8 41.7 43 30 29.6 68.9 68.6 -58.9 -62.7 — — — 16.5 — — — — — — — — — Gain[1] Output 3rd Order Intercept Point [1,2] Output 1dB Compressed [1] Power Added Efficiency Adjacent Channel Leakage Power Ratio [1,3] Notes: 1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition. 2. I ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone. II ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5 dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Channel Integrate Bandwidth = 3.84 MHz 4. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. Input 50 Ohm Transmission Line and Gate Bias T (0.3 dB loss) Input Matching Circuit Γ_mag = 0.69 Γ_ang = -164° (1.1 dB loss) DUT Output Matching Circuit Γ_mag = 0.65 Γ_ang = -163° (0.9 dB loss) 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 3 1.8 nH 1.2 pF 50 Ohm .02 λ 15 nH 15 Ohm 2.2 µF 2.2 µF 110 Ohm .03 λ 110 Ohm .03 λ 50 Ohm .02 λ 2.7 nH 1.2 pF RF Input DUT 47 nH RF Output Gate DC Supply Drain DC Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V, 200 mA quiesent bias: Optimum OIP3 Freq (GHz) 0.9 2.0 2.4 3.9 Gamma Source Mag Ang 0.776 0.872 0.893 0.765 152 -171 -162 -132 Gamma Load Mag Ang 0.549 0.683 0.715 0.574 -178 -179 -174 -144 OIP3 (dBm) 43.3 43.1 42.8 41.7 Gain (dB) 17.94 15.06 14.03 9.47 P1dB (dBm) 29.63 30.12 29.90 29.02 PAE (%) 63.8 66.8 64.5 52 Optimum P1dB Freq (GHz) 0.9 2.0 2.4 3.9 Gamma Source Mag Ang 0.773 0.691 0.797 0.602 153 147 164 -163 Gamma Load Mag Ang 0.784 0.841 0.827 0.794 -173 -166 -166 -155 OIP3 (dBm) 38.0 36.4 36.2 35.4 Gain (dB) 19.28 10.34 8.43 7.03 P1dB (dBm) 31.9 31.4 31.2 31 PAE (%) 54.23 38.15 37.38 32.72 4 ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 200 mA 50 45 40 50 45 30 40 35 OIP3 (dBm) OIP3 (dBm) 35 30 25 20 15 10 50 150 250 350 4.5 V 4V 3V 35 30 25 20 15 4.5 V 4V 3V P1dB (dBm) 25 20 4.5 V 4V 3V 15 450 550 10 10 50 150 250 350 450 550 50 150 250 350 450 550 IDS (mA) Idq (mA) IDS (mA) Figure 8. OIP3 vs. IDS and VDS at 2 GHz. Figure 9. OIP3 vs. IDS and VDS at 900 MHz. Figure 10. P1dB vs. Idq and VDS at 2 GHz. 35 17 16 15 20 19 18 30 P1dB (dBm) 25 GAIN (dB) GAIN (dB) 14 13 12 11 10 4.5 V 4V 3V 17 16 15 14 13 4.5 V 4V 3V 20 4.5 V 4V 3V 15 10 50 150 250 350 450 550 Idq (mA) 50 150 250 350 450 550 50 150 250 350 450 550 IDS (mA) IDS (mA) Figure 11. P1dB vs. Idq and VDS at 900 MHz. Figure 12. Gain vs. IDS and VDS at 2 GHz. Figure 13. Gain vs. IDS and VDS at 900 MHz. 80 70 60 80 70 60 50 45 40 35 30 25 20 0.5 -40 °C 25 °C 85 °C PAE (%) 40 30 20 10 0 50 150 250 350 450 550 Idq (mA) 4.5 V 4V 3V PAE (%) 50 40 30 20 10 0 50 150 250 350 450 550 Idq (mA) 4.5 V 4V 3V OIP3 (dBm) 50 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 14. PAE vs. Idq and VDS at 2 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. Figure 15. PAE vs. Idq and VDS at 900 MHz. Figure 16. OIP3 vs. Temp and Freq. 5 ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V, 200 mA 35 20 80 70 30 15 60 P1dB (dBm) GAIN (dB) 10 -40 °C 25 °C 85 °C PAE (%) 25 50 40 30 20 10 -40 °C 25 °C 85 °C 20 15 -40 °C 25 °C 85 °C 5 10 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 17. P1dB vs. Temp and Freq. Figure 18. Gain vs. Temp and Freq. Figure 19. PAE vs. Temp and Freq. ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5 V, 200 mA 50 45 40 50 45 40 30 35 OIP3 (dBm) 35 30 25 20 15 10 50 150 250 350 4.5 V 4V 3V OIP3 (dBm) 35 30 25 20 15 10 4.5 V 4V 3V P1dB (dBm) 25 20 4.5 V 4V 3V 15 10 50 150 250 350 450 550 50 150 250 350 450 550 IDS (mA) Idq(mA) 450 550 IDS (mA) Figure 20. OIP3 vs. IDS and VDS at 2 GHz. Figure 21. OIP3 vs. IDS and VDS at 900 MHz. Figure 22. P1dB vs. Idq and VDS at 2 GHz. 35 12 10 8 22 20 18 30 P1dB (dBm) 25 GAIN (dB) GAIN (dB) 6 4 2 0 50 150 250 350 450 550 IDS (mA) 16 14 20 4.5 V 4V 3V 15 4.5 V 4V 3V 12 10 50 150 250 350 4.5 V 4V 3V 10 50 150 250 350 450 550 Idq (mA) 450 550 IDS (mA) Figure 23. P1dB vs. Idq and VDS at 900 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. Figure 24. Gain vs. IDS and VDS at 2 GHz. Figure 25. Gain vs. IDS and VDS at 900 MHz. 6 ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5V, 200 mA 50 70 60 50 45 40 40 PAE (%) PAE (%) 30 OIP3 (dBm) 35 40 30 20 4.5 V 4V 3V 30 -40 °C 25 °C 85 °C 10 20 10 4.5 V 4V 3V 25 0 50 150 250 350 450 550 Idq (mA) 50 150 250 350 450 550 20 0.5 1 1.5 2 2.5 3 3.5 4 Idq (mA) FREQUENCY (GHz) Figure 26. PAE vs. Idq and VDS at 2 GHz. Figure 27. PAE vs. Idq and VDS at 900 MHz. Figure 28. OIP3 vs. Temp and Freq. 40 35 20 70 60 15 P1dB (dBm) 30 50 GAIN (dB) PAE (%) 40 30 20 -40 °C 25 °C 85 °C 25 20 15 10 0.5 -40 °C 25 °C 85 °C 10 5 -40 °C 25 °C 85 °C 10 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 29. P1dB vs. Temp and Freq. Figure 30. Gain vs. Temp and Freq. Figure 31. PAE vs. Temp and Freq. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 7 ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 300 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.94 0.93 0.93 0.93 0.92 0.93 0.92 0.93 0.92 0.93 0.93 0.93 0.92 0.92 0.92 0.91 0.91 0.91 0.91 0.91 0.90 0.89 0.89 0.89 0.90 0.90 0.89 0.83 0.86 Ang. -134.9 -157.7 -166.6 -171.8 -173.9 -176.9 -178.8 178.7 177.1 175.7 168.7 163.0 157.8 152.5 142.8 133.2 124.6 115.7 106.0 95.5 85.2 74.3 63.0 54.1 46.3 40.6 33.3 25.4 20.0 dB 31.16 25.64 22.26 19.78 18.70 17.12 15.78 14.61 13.58 12.64 8.99 6.36 4.40 2.73 0.03 -2.17 -4.21 -5.80 -6.82 -7.36 -7.98 -8.69 -9.25 -9.80 -10.25 -10.86 -11.16 -11.81 -12.07 S21 Mag. 36.15 19.14 12.97 9.74 8.60 7.18 6.15 5.37 4.77 4.28 2.81 2.08 1.66 1.36 1.00 0.77 0.61 0.51 0.45 0.42 0.40 0.38 0.35 0.32 0.31 0.30 0.32 0.24 0.24 Ang. 111.2 99.2 94.2 90.9 88.9 86.1 84.3 82.3 80.6 79.1 71.4 64.2 57.2 50.4 37.6 24.2 14.1 5.6 -2.6 -10.2 -22.2 -29.1 -40.1 -51.7 -55.2 -57.3 -71.1 -75.3 -90.5 dB -38.53 -37.87 -37.61 -37.09 -36.15 -35.80 -35.41 -35.11 -35.00 -34.46 -32.70 -31.27 -29.90 -28.59 -26.69 -25.30 -24.32 -23.48 -22.49 -21.39 -20.50 -19.72 -19.42 -19.12 -18.65 -18.57 -18.02 -17.65 -17.43 S12 Mag. 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.03 0.03 0.04 0.05 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.11 0.11 0.12 0.13 0.13 Ang. 29.7 21.8 21.1 23.4 25.4 27.0 29.5 32.5 33.1 35.0 40.0 42.3 42.5 41.6 35.7 29.8 23.7 19.5 14.1 8.5 0.4 -8.4 -17.1 -23.9 -29.7 -35.8 -42.3 -47.1 -53.1 S22 Mag. Ang. 0.73 0.76 0.78 0.78 0.75 0.75 0.75 0.76 0.75 0.76 0.76 0.76 0.76 0.75 0.74 0.71 0.65 0.59 0.56 0.58 0.60 0.63 0.65 0.67 0.69 0.69 0.71 0.73 0.76 -164.5 -173.7 -176.8 -179.9 178.9 176.9 175.5 174.0 172.8 171.6 166.0 160.6 155.5 149.7 138.6 127.2 117.2 111.3 108.2 103.7 96.0 87.2 77.6 68.2 58.7 50.1 41.8 35.1 27.7 MSG/MAG dB 34.79 31.68 29.99 28.43 27.31 26.52 25.59 24.75 24.24 23.53 20.88 17.20 14.71 12.65 9.96 7.23 4.97 3.02 1.86 1.19 0.53 -0.04 -0.61 -1.04 -1.13 -1.88 -2.26 -3.17 -3.76 40 MSG/MAG & |S21|2 (dB) 30 MSG 20 10 MAG Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 0 S21 -10 -20 0 5 10 FREQUENCY (GHz) 15 20 Figure 32. MSG/MAG & |S21|2 (dB) @ 4.5V, 300 mA. 8 ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.94 0.93 0.94 0.93 0.92 0.92 0.92 0.92 0.93 0.92 0.93 0.93 0.92 0.93 0.91 0.91 0.91 0.90 0.90 0.91 0.91 0.89 0.89 0.89 0.90 0.90 0.91 0.85 0.87 Ang. -132.6 -156.3 -165.6 -170.8 -173.1 -176.2 -178.2 179.4 177.4 176.0 168.9 163.6 157.9 152.6 143.1 133.7 124.7 115.7 105.6 95.7 84.9 74.0 63.1 54.0 46.4 38.8 33.1 26.8 19.3 dB 31.26 25.79 22.40 19.93 18.84 17.26 15.92 14.76 13.72 12.77 9.13 6.49 4.50 2.81 0.16 -2.08 -4.02 -5.75 -6.77 -7.45 -7.95 -8.29 -9.19 -9.74 -10.17 -10.85 -10.77 -11.05 -11.53 S21 Mag. 36.54 19.47 13.18 9.92 8.75 7.29 6.25 5.47 4.85 4.34 2.86 2.11 1.67 1.38 1.01 0.78 0.62 0.51 0.45 0.42 0.40 0.38 0.34 0.326 0.31 0.28 0.28 0.28 0.26 Ang. 112.1 99.6 94.4 91.1 89.0 86.2 84.3 82.3 80.4 79.1 70.9 63.7 56.8 49.3 35.8 22.7 12.0 3.3 -3.9 -12.1 -22.4 -32.0 -39.5 -51.1 -58.1 -67.8 -73.7 -83.3 -100.4 dB -37.40 -36.68 -36.47 -36.17 -35.11 -34.84 -34.72 -34.37 -34.02 -33.71 -32.20 -30.97 -29.65 -28.54 -26.68 -25.40 -24.42 -23.61 -22.73 -21.60 -20.76 -19.93 -19.45 -19.03 -18.78 -18.47 -18.19 -17.88 -17.54 S12 Mag. 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.03 0.03 0.04 0.05 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.11 0.11 0.12 0.12 0.13 Ang. 27.2 19.2 19.9 19.9 24.6 23.9 25.6 27.6 28.6 30.8 35.0 38.2 39.1 38.1 33.9 28.0 22.3 18.2 14.4 8.4 0.9 -8.6 -16.8 -24.1 -30.7 -36.1 -42.9 -47.5 -53.8 S22 Mag. Ang. 0.70 0.74 0.76 0.76 0.73 0.73 0.73 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.73 0.70 0.65 0.58 0.54 0.55 0.58 0.61 0.64 0.67 0.68 0.68 0.71 0.73 0.75 -161.0 -171.6 -175.6 -178.8 179.9 177.8 176.2 174.7 173.4 172.2 166.5 161.1 155.9 150.2 139.0 127.4 117.0 110.2 107.5 103.9 97.0 88.4 78.9 69.1 59.6 50.9 42.0 35.3 27.3 MSG/MAG dB 34.49 31.13 29.44 27.93 26.87 26.08 25.41 24.59 23.85 23.16 20.59 17.50 14.78 13.16 9.84 7.34 5.01 2.77 1.56 1.13 0.82 -0.05 -0.82 -1.38 -1.33 -1.80 -2.11 -2.60 -2.83 40 MSG/MAG & |S21| (dB) 30 MSG 20 10 MAG Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 2 0 S21 -10 -20 0 5 10 FREQUENCY (GHz) 15 20 Figure 33. MSG/MAG & |S21|2 (dB) @ 4.5V, 200 mA. 9 ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 100 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.93 0.93 0.93 0.92 0.91 0.91 0.92 0.92 0.92 0.91 0.92 0.91 0.91 0.91 0.91 0.91 0.90 0.90 0.90 0.90 0.9 0.89 0.90 0.89 0.90 0.88 0.90 0.86 0.86 Ang. -125.4 -152.1 -162.8 -168.7 -170.8 -174.4 -176.8 -179.0 178.7 177.0 169.8 163.9 158.8 153.0 143.7 134.0 125.0 115.7 106.4 96.5 86.1 75.4 63.8 54.7 46.5 40.2 33.5 26.4 19.3 dB 30.99 25.70 22.34 19.90 18.78 17.21 15.88 14.72 13.69 12.73 9.11 6.49 4.52 2.89 0.20 -2.08 -4.20 -6.04 -7.35 -8.14 -8.45 -9.46 -9.59 -10.42 -10.99 -11.15 -11.50 -11.50 -11.51 S21 Mag. 35.43 19.27 13.09 9.88 8.68 7.25 6.22 5.44 4.83 4.33 2.85 2.11 1.68 1.39 1.02 0.78 0.61 0.49 0.42 0.39 0.37 0.33 0.33 0.30 0.28 0.27 0.26 0.26 0.26 Ang. 115.3 101.4 95.5 91.8 89.5 86.6 84.4 82.3 80.4 78.8 70.2 62.8 55.2 47.7 33.1 19.2 7.3 -1.6 -7.7 -16.4 -25.3 -35.2 -46.1 -52.9 -59.8 -70.6 -71.7 -80.8 -92.6 dB -34.72 -33.88 -33.70 -33.49 -32.50 -32.42 -32.20 -32.13 -32.02 -31.85 -30.95 -30.00 -29.22 -28.39 -26.77 -25.62 -24.73 -23.99 -23.23 -22.04 -20.89 -20.08 -19.41 -19.02 -18.87 -18.71 -18.22 -18.28 -17.88 S12 Mag. 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.04 0.05 0.05 0.06 0.06 0.07 0.09 0.09 0.10 0.11 0.11 0.11 0.12 0.12 0.12 Ang. 28.6 18.9 15.5 16.5 17.7 17.6 19.1 18.8 18.9 20.6 24.8 27.8 29.0 29.0 27.2 22.2 17.3 14.3 11.2 7.2 0.5 -7.5 -16.7 -25.1 -31.7 -38.2 -45.5 -49.0 -54.8 S22 Mag. Ang. 0.65 0.70 0.72 0.72 0.69 0.7 0.7 0.70 0.70 0.70 0.70 0.71 0.71 0.71 0.70 0.68 0.64 0.56 0.51 0.51 0.54 0.58 0.62 0.65 0.67 0.68 0.70 0.72 0.74 -151.1 -166.3 -172.2 -176.0 -177.2 -179.7 178.3 176.6 175.2 173.8 167.8 162.3 157.2 151.6 140.4 128.7 117.4 109.1 106.4 105.0 99.3 90.9 81.3 71.3 61.4 52.4 43.3 35.9 27.9 MSG/MAG dB 32.94 29.84 27.95 26.73 25.59 24.80 23.96 23.38 22.86 22.22 20.08 18.19 14.84 12.76 9.92 7.42 4.79 2.45 0.71 0.01 -0.37 -1.33 -1.60 -1.93 -2.12 -2.66 -2.83 -3.33 -3.69 40 MSG/MAG & |S21|2 (dB) 30 MSG 20 10 MAG Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 0 S21 -10 -20 0 5 10 FREQUENCY (GHz) 15 20 Figure 34. MSG/MAG & |S21|2 (dB) @ 4.5V, 100 mA. 10 ATF-511P8 Typical Scattering Parameters, VDS = 4V, IDS = 200 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.94 0.93 0.93 0.94 0.93 0.93 0.93 0.92 0.92 0.93 0.92 0.93 0.92 0.92 0.92 0.91 0.92 0.91 0.91 0.90 0.92 0.90 0.91 0.90 0.94 0.87 0.89 0.89 0.88 Ang. -133.7 -156.9 -165.9 -170.9 -174.5 -175.8 -178.2 179.7 178.0 176.3 169.6 164.4 159.6 154.2 144.9 135.5 126.6 117.1 108.2 99.1 89.2 79.6 70.9 62.2 53.8 45.0 37.7 30.5 25.4 dB 30.85 25.31 21.89 19.48 17.53 16.77 15.53 14.28 13.21 12.34 8.63 6.12 4.07 2.30 -0.31 -2.55 -4.30 -5.64 -6.81 -7.13 -7.76 -8.39 -8.92 -9.42 -9.84 -10.51 -10.74 -10.03 -11.77 S21 Mag. 34.87 18.41 12.43 9.42 7.52 6.89 5.97 5.17 4.57 4.13 2.70 2.02 1.59 1.30 0.96 0.74 0.60 0.52 0.45 0.44 0.40 0.38 0.35 0.33 0.32 0.29 0.29 0.31 0.25 Ang. 111.4 99.5 94.2 90.9 88.8 86.0 84.2 82.5 80.5 78.6 71.0 63.5 57.0 50.3 37.4 25.4 15.1 6.50 -2.8 -13.7 -21.2 -30.0 -42.9 -48.9 -60.1 -68.5 -72.4 -85.1 -91.8 dB -37.28 -36.61 -36.19 -35.98 -35.84 -34.69 -34.42 -34.11 -33.77 -33.66 -32.21 -30.69 -29.46 -28.47 -26.48 -25.14 -24.15 -23.20 -22.06 -21.10 -20.40 -19.67 -19.28 -19.11 -18.86 -18.58 -18.59 -17.88 -17.72 S12 Mag. 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.04 0.05 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.11 0.11 0.11 0.12 0.13 Ang. 28.2 20.4 20.2 20.4 23.0 23.5 25.0 27.1 29.2 29.6 34.5 38.0 39.4 37.7 33.8 28.4 23.4 18.3 12.3 5.2 -2.7 -11.0 -19.9 -27.2 -33.1 -38.4 -43.7 -48.3 -59.0 S22 Mag. Ang. 0.73 0.76 0.78 0.78 0.78 0.76 0.75 0.76 0.76 0.76 0.76 0.76 0.76 0.75 0.73 0.69 0.64 0.62 0.62 0.62 0.64 0.65 0.66 0.67 0.68 0.7 0.71 0.73 0.74 -162.5 -172.6 -176.3 -179.5 178.5 177.3 175.5 173.9 172.5 171.4 165.3 159.2 154.1 148.6 137.1 127.3 119.4 114.5 108.5 100.8 90.4 79.3 67.0 57.1 48.7 40.0 36.3 28.8 19.5 MSG/MAG dB 33.96 30.89 28.90 27.70 26.73 25.83 24.98 24.13 23.60 22.95 20.34 17.32 14.52 12.34 9.75 6.74 5.17 3.27 2.03 1.60 1.40 0.26 0.15 -0.69 -1.20 -1.56 -1.97 -2.50 -2.82 40 MSG/MAG & |S21|2 (dB) 30 MSG 20 10 MAG Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 0 S21 -10 -20 0 5 10 FREQUENCY (GHz) 15 20 Figure 35. MSG/MAG & |S21|2 (dB) @ 4V, 200 mA. 11 ATF-511P8 Typical Scattering Parameters, VDS = 3V, IDS = 200 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.95 0.94 0.94 0.94 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.92 0.93 0.92 0.93 0.91 0.91 0.90 0.92 0.92 0.91 0.91 0.92 0.88 0.87 0.83 0.85 Ang. -137.1 -159.0 -167.3 -172.0 -175.3 -176.8 -178.7 179.1 177.3 176.1 169.4 164.0 159.1 154.0 144.8 135.2 126.0 116.6 107.4 98.4 89.0 79.5 70.1 61.9 51.8 44.1 36.4 30.1 24.0 dB 29.51 23.89 20.46 18.04 16.10 15.36 14.14 12.87 11.82 10.91 7.24 4.75 2.73 0.93 -1.58 -3.78 -5.54 -7.07 -7.66 -8.06 -8.99 -9.12 -9.28 -9.71 -10.04 -10.01 -10.16 -10.61 -11.96 S21 Mag. 29.89 15.65 10.54 7.98 6.38 5.86 5.09 4.4 3.89 3.51 2.30 1.72 1.36 1.11 0.83 0.64 0.52 0.44 0.41 0.39 0.35 0.35 0.34 0.32 0.31 0.31 0.31 0.31 0.25 Ang. 109.9 98.7 93.8 90.7 88.7 85.9 84.2 82.6 80.6 78.9 71.8 64.7 58.5 51.6 38.7 27.3 17.2 10.5 2.06 -5.6 -15.9 -25.8 -35.9 -39.9 -54.7 -59.8 -77.5 -87.2 -97.4 dB -36.88 -36.27 -36.20 -35.82 -35.59 -34.34 -34.27 -34.12 -33.66 -33.55 -31.97 -30.60 -29.39 -28.15 -26.26 -24.91 -24.05 -23.11 -22.08 -21.04 -20.23 -19.45 -19.08 -18.93 -18.89 -18.63 -18.83 -18.17 -17.69 S12 Mag. 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.04 0.05 0.06 0.07 0.07 0.08 0.09 0.10 0.11 0.11 0.11 0.11 0.11 0.12 0.13 Ang. 25.2 19.8 18.0 20.5 22.4 24.0 24.8 27.1 29.1 29.3 35.4 38.5 38.5 37.4 33.1 27.7 22.1 17.2 12.1 5.0 -2.7 -12.4 -21.4 -29.2 -35.6 -40.7 -44.7 -51.2 -58.3 S22 Mag. Ang. 0.78 0.81 0.82 0.83 0.83 0.81 0.81 0.81 0.81 0.81 0.81 0.81 0.81 0.80 0.78 0.74 0.68 0.63 0.62 0.63 0.64 0.66 0.68 0.69 0.70 0.72 0.73 0.74 0.75 -166.0 -174.5 -177.6 179.4 177.6 176.3 174.6 173.1 171.7 170.7 164.6 158.5 153.4 147.6 135.8 125.0 115.6 110.7 106.3 99.5 89.8 78.7 66.3 56.4 47.9 39.0 35.3 27.7 18.3 MSG/MAG dB 33.29 30.18 28.47 26.98 25.75 24.89 24.28 23.42 22.69 22.23 19.64 16.34 14.08 11.72 9.24 6.28 4.39 1.96 1.32 0.60 0.49 0.19 -0.19 -0.68 -0.40 -1.57 -1.85 -2.42 -3.71 40 MSG/MAG & |S21|2 (dB) 30 MSG 20 10 MAG Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 0 S21 -10 -20 0 5 10 FREQUENCY (GHz) 15 20 Figure 36. MSG/MAG & |S21|2 (dB) @ 3V, 200 mA. 12 Device Models Refer to Agilent’s Web Site www.agilent.com/view/rf Ordering Information Part Number ATF-511P8-TR1 ATF-511P8-TR2 ATF-511P8-BLK No. of Devices 3000 10000 100 Container 7” Reel 13”Reel antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 P pin1 D pin1 1 2 8 E1 R e 3 4 1PX 7 E 6 5 L b Bottom View Top View A A1 A2 A Side View End View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN. 0.70 0 0.203 REF 0.225 1.9 0.65 1.9 1.45 0.50 BSC 0.20 0.35 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC 0.25 0.40 MAX. 0.80 0.05 0.203 REF 0.275 2.1 0.95 2.1 1.75 0.50 BSC 0.30 0.45 DIMENSIONS ARE IN MILLIMETERS 13 PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder mask RF transmission line + 2.72 (107.09) 0.63 (24.80) 0.22 (8.86) PIN 1 0.32 (12.79) 0.50 (19.68) 1.54 (60.61) 0.25 (9.74) 0.25 (9.84) 0.50 (19.68) 1.60 (62.99) 0.28 (10.83) 0.60 (23.62) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) 0.72 (28.35) 0.63 (24.80) PCB Land Pattern (top view) Notes: Typical stencil thickness is 5 mils. Measurements are in millimeters (mils). Stencil Layout (top view) Device Orientation REEL 4 mm 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 1PX 1PX 1PX 1PX 14 Tape Dimensions D1 P pin1 D pin1 1 2 8 E1 R e 3 4 1PX 7 E 6 5 L b Bottom View Top View A A1 A2 A Side View End View DIMENSIONS SYMBOL MIN. A 0.70 A1 0 A2 0.203 REF b 0.225 D 1.9 D1 0.65 E 1.9 E1 1.45 e 0.50 BSC P 0.20 L 0.35 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC 0.25 0.40 MAX. 0.80 0.05 0.203 REF 0.275 2.1 0.95 2.1 1.75 0.50 BSC 0.30 0.45 DIMENSIONS ARE IN MILLIMETERS 15 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright © 2003 Agilent Technologies, Inc. Obsoletes 5988-8246EN (12/02) August 5, 2003 5989-0003EN