ATF-55143-TR2

Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Single Supply Enhancement Mode Technology [1] • Very low noise figure • Excellent uniformity in product specifications • 400 micron gate width • Low cost surface mount small plastic package SOT-343 (4 lead SC-70) • Tape-and-Reel packaging option available Specifications 2 GHz; 2.7V, 10 mA (Typ.) • 24.2 dBm output 3rd order intercept SOURCE Description Agilent Technologies’s ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range. Surface Mount Package SOT-343 Pin Connections and Package Marking 5Fx DRAIN • 14.4 dBm output power at 1 dB gain compression • 0.6 dB noise figure • 17.7 dB associated gain SOURCE GATE Note: Top View. Package marking provides orientation and identification “5F” = Device Code “x” = Date code character identifies month of manufacture. Applications • Low noise amplifier for cellular/ PCS handsets • LNA for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-PHEMT for other ultra low noise applications Note: 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. 1 ATF-55143 Absolute Maximum Rating s [1] Symbol VDS VGS VGD IDS IGS Pdiss Pin max. TCH TSTG θjc Parameter Drain-Source Voltage[2] Gate-Source Voltage[2] Gate Drain Voltage[2] Drain Current [2] Gate Current [5] Total Power Dissipation[3] RF Input Power[5] Channel Temperature Storage Temperature Thermal Resistance [4] ESD (Human Body Model) ESD (Machine Model) Units V V V mA mA mW dBm °C °C °C/W V V Absolute Maximum 5 -5 to 1 5 100 1 270 7 150 -65 to 150 235 200 25 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25 °C. Derate 4.3 mW/ °C for TL > 87 °C. 4. Thermal resistance measured using 150 °C Liquid Crystal Measurement method. 5. Device can safely handle +3 dBm RF Input Power as long asIGS is limited to 1 mA. IGS at P1dB drive level is bias circuit dependent. See applications section for additional information. 70 60 50 0.7 V IDS (mA) 40 30 20 10 0 0 1 2 3 4 VDS (V) 5 6 0.6 V 0.5 V 0.4 V 0.3V 7 Figure 1. Typical I-V Curves. (V GS = 0.1 V per step) Product Consistency Distribution Charts [6, 7] 300 250 200 Cpk = 2.02 Stdev = 0.36 200 Cpk = 1.023 Stdev = 0.28 160 240 200 160 Cpk = 3.64 Stdev = 0.031 120 150 100 50 0 22 23 24 OIP3 (dBm) 25 26 -3 Std -3 Std 80 +3 Std 120 80 +3 Std 40 40 0 0.43 0 15 16 17 GAIN (dB) 18 19 0.53 0.63 0.73 0.83 0.93 NF (dB) Figure 2. OIP3 @ 2.7 V, 10 mA. LSL = 22.0, Nominal = 24.2 Figure 3. Gain @ 2.7 V, 10 mA. USL = 18.5, LSL = 15.5, Nominal = 17.7 Figure 4. NF @ 2.7 V, 10 mA. USL = 0.9, Nominal = 0.6 Notes: 6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device Symbol Vgs Vth Idss Gm Igss NF Ga OIP3 P1dB Parameter and Test Condition Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Gate Leakage Current Noise Figure [1] Associated Gai [1] n Output 3rd Order Intercept Point [1] 1dB Compressed Output Power [1] f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 2 mA Vds = 2.7V, Vgs = 0V Vds = 2.7V, gm = ∆Idss/ ∆Vgs; ∆Vgs = 0.75 – 0.7 = 0.05V Vgd = Vgs = -2.7V Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Units V V µA mmho µA dB dB dB dB dBm dBm dBm dBm Min. 0.3 0.18 — 110 — — — 15.5 — 22.0 — — — Typ.[2] 0.47 0.37 0.1 220 — 0.6 0.3 17.7 21.6 24.2 22.3 14.4 14.2 Max. 0.65 0.53 3 285 95 0.9 — 18.5 — — — — — Notes: 1. Measurements obtained using production test board described in Figure 5. 2. Typical values determined from a sample size of 500 parts from 6 wafers. Input 50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss) Input Matching Circuit Γ_mag = 0.4 Γ_ang = 83 ° (0.3 dB loss) DUT Output Matching Circuit Γ_mag = 0.5 Γ_ang = -26° (1.2 dB loss) 50 Ohm Transmission Line Including Drain Bias T (0.3 dB loss) Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements. 3 ATF-55143 Typical Performance Curves 30 1.2 1.0 0.8 GAIN (dB) Fmin (dB) 27 25 23 21 19 17 15 0 1 2 3 4 5 6 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) 25 20 0.6 0.4 15 10 2V, 10 mA 2.7V, 10 mA 0.2 0 2V, 10 mA 2.7V, 10 mA OIP3 (dBm) 2V, 10 mA 2.7V, 10 mA 5 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 6. Gain vs. Bias over Frequency.[1] Figure 7. Fmin vs. Frequency and Bias. Figure 8. OIP3 vs. Bias over Frequency.[1] 15 16 21 20 10 P1dB (dBm) IIP3 (dBm) 14 19 12 GAIN (dB) 5 18 17 0 2V, 10 mA 2.7V, 10 mA 10 2V, 10 mA 2.7V, 10 mA 16 15 2V 2.7V 3V -5 0 1 2 3 4 5 6 FREQUENCY (GHz) 8 0 1 2 3 4 5 6 FREQUENCY (GHz) 0 5 10 15 20 25 30 35 Ids (mA) Figure 9. IIP3 vs. Bias over Frequency.[1] Figure 10. P1dB vs. Bias over Frequency.[1,2] Figure 11. Gain vs. Ids and Vds at 2 GHz.[1] 0.60 0.55 0.50 OIP3 (dBm) Fmin (dB) 35 33 31 IIP3 (dBm) 2V 2.7V 3V 16 14 12 10 8 6 4 2 35 0 0 5 10 15 20 25 2V 2.7V 3V 0.45 0.40 0.35 0.30 0.25 0.20 0 5 10 15 20 25 2V 2.7V 3V 29 27 25 23 21 30 35 19 0 5 10 15 20 25 30 30 35 Ids (mA) Ids (mA) Ids (mA) Figure 12. Fmin vs. Ids and Vds at 2 GHz. Figure 13. OIP3 vs. Ids and Vds at 2 GHz.[1] Figure 14. IIP3 vs. Ids and Vds at 2 GHz.[1] Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias 4 point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15mA as a P1dB of +14.5 dBm is approached. ATF-55143 Typical Performance Curves, continued 17 16 15 P1dB (dBm) GAIN (dB) 25 24 0.35 0.30 23 22 21 20 2V 2.7V 3V 14 13 12 11 10 Fmin (dB) 2V 2.7V 3V 0.25 0.20 2V 2.7V 3V 0.15 19 18 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 0.10 35 40 0 5 10 15 20 25 30 35 Ids (mA) Ids (mA) Idsq (mA) Figure 15. P1dB vs. Idsq and Vds at 2 GHz.[1,2] Figure 16. Gain vs. Ids and Vds at 900 MHz. [1] Figure 17. Fmin vs. Ids and Vds at 900 MHz. 32 30 28 OIP3 (dBm) IIP3 (dBm) 7 6 5 P1dB (dBm) 17 16 15 14 13 12 11 2V 2.7V 3V 2V 2.7V 3V 26 24 22 20 18 16 0 5 10 15 20 25 2V 2.7V 3V 4 3 2 1 0 -1 35 -2 0 5 10 15 20 25 10 35 9 0 5 10 15 20 25 30 30 30 35 Ids (mA) Ids (mA) Idsq (mA) Figure 18. OIP3 vs. Ids and Vds at 900 MHz. [1] Figure 19. IIP3 vs. Ids and Vds at 900 MHz. [1] Figure 20. P1dB vs. Idsq and Vds at 900 MHz. [1,2] Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached. 5 ATF-55143 Typical Performance Curves, continued 28 25 °C -40 °C 85 °C 2.0 25 °C -40 °C 85 °C 25 24 23 22 21 23 GAIN (dB) Fmin (dB) 1.5 OIP3 (dBm) 18 1.0 13 0.5 20 25 °C -40 °C 85 °C 8 0 1 2 3 4 5 6 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 FREQUENCY (GHz) 19 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 21. Gain vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1] 16 14 12 10 6 4 2 0 -2 -4 -6 25 °C -40 °C 85 °C Figure 22. Fmin vs. Frequency and Temperature at 2.7V, 10 mA. 16 15 14 13 12 11 10 25 °C -40 °C 85 °C Figure 23. OIP3 vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1] 0 1 2 3 4 5 6 P1dB (dBm) IIP3 (dBm) 8 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Figure 24. IIP3 vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1] Figure 25. P1dB vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1,2] Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached. 6 ATF-55143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.998 0.963 0.894 0.879 0.793 0.731 0.718 0.657 0.611 0.561 0.558 0.566 0.583 0.601 0.636 0.708 0.76 0.794 0.819 0.839 0.862 0.853 0.868 0.911 Ang. -6.5 -31.7 -54.7 -60.1 -84.1 -100.8 -104.7 -123.7 -141.8 -177.5 149.4 122.5 99.7 77.7 57.5 38.3 21.8 7.6 -7.8 -23.6 -37.9 -51.0 -60.1 -70.3 dB 20.78 20.37 19.57 19.32 18.07 17.11 16.86 15.79 14.80 13.10 11.52 10.06 8.78 7.62 6.63 5.66 4.45 3.32 2.29 1.27 -0.19 -1.83 -3.25 -4.44 S21 Mag. 10.941 10.434 9.516 9.252 8.009 7.166 6.970 6.159 5.494 4.517 3.768 3.183 2.748 2.404 2.147 1.919 1.670 1.465 1.302 1.157 0.978 0.810 0.688 0.601 S12 Ang. 174.9 154.8 137.1 133.0 115.2 102.8 100.1 86.6 74.2 51.0 29.3 9.4 -9.2 -27.4 -45.3 -64.6 -83.1 -100.2 -117.9 -136.7 -155.2 -171.8 173.9 158.5 S22 Ang. 86.1 70.2 56.9 54 41.5 33.6 31.8 23.7 16.5 3.6 -8.3 -18.4 -28.5 -38.4 -44.7 -56.6 -68.2 -79.3 -91.4 -104.4 -117.7 -129.4 -139.9 -153.2 Mag. 0.006 0.029 0.048 0.051 0.066 0.075 0.077 0.084 0.090 0.098 0.102 0.104 0.106 0.105 0.110 0.117 0.119 0.121 0.121 0.122 0.115 0.109 0.107 0.102 Mag. 0.796 0.762 0.711 0.693 0.622 0.570 0.559 0.503 0.446 0.343 0.269 0.224 0.189 0.140 0.084 0.08 0.151 0.217 0.262 0.327 0.431 0.522 0.588 0.641 Ang. -4.2 -20.4 -34.4 -37.3 -49.6 -57.1 -58.7 -66.3 -73 -87.6 -104.4 -120.4 -137.3 -149.3 -170 109.3 64.5 40.8 20.8 0.5 -16.4 -28.6 -41.6 -55.8 MSG/MAG dB 32.61 25.56 22.97 22.59 20.84 19.80 19.57 18.65 17.86 16.64 15.68 10.94 9.33 8.14 7.72 8.03 7.90 7.66 7.36 7.05 6.52 5.22 4.90 5.94 Typical Noise Parameters, VDS = 2 V, IDS = 10 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S 21 | 2 (dB) Fmin dB 0.21 0.26 0.27 0.42 0.43 0.50 0.59 0.73 0.92 1.04 1.06 1.22 1.42 1.57 1.71 Γopt Mag. 0.65 0.60 0.55 0.55 0.54 0.45 0.40 0.26 0.21 0.24 0.23 0.28 0.33 0.43 0.54 Γopt Ang. 17.5 22.6 27.0 49.4 51.7 61.5 78.1 111.9 172.5 -151.5 -144.5 -107.1 -75.5 -51.5 -33.3 Rn/50 0.13 0.12 0.12 0.11 0.11 0.10 0.09 0.07 0.06 0.07 0.08 0.14 0.24 0.38 0.57 Ga dB 24.84 22.86 22.39 18.77 18.42 17.14 15.50 13.62 12.05 11.28 11.12 10.45 9.84 9.10 8.03 35 30 25 20 15 10 5 0 -5 -10 0 5 10 FREQUENCY (GHz) 15 20 |S 21 | 2 MSG Figure 26. MSG/MAG and |S 21| 2 vs. Frequency at 2V, 10 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane at the end of the gate is lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 7 ATF-55143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.997 0.953 0.873 0.856 0.759 0.695 0.681 0.621 0.578 0.536 0.541 0.554 0.574 0.594 0.63 0.703 0.757 0.793 0.818 0.841 0.863 0.856 0.871 0.913 Ang. -7.1 -34.5 -58.8 -64.6 -89.3 -106.2 -110.2 -129.3 -147.4 177.3 145.1 119.1 97.0 75.5 55.9 37.3 21.1 7.1 -8.2 -23.8 -38.1 -51.2 -60.2 -70.4 dB 22.33 21.82 20.86 20.58 19.14 18.06 17.8 16.62 15.54 13.71 12.09 10.59 9.3 8.13 7.12 6.14 4.92 3.79 2.77 1.76 0.32 -1.29 -2.66 -3.8 S21 Mag. 13.074 12.333 11.042 10.693 9.059 7.998 7.762 6.773 5.985 4.850 4.020 3.384 2.917 2.549 2.271 2.028 1.762 1.547 1.376 1.225 1.038 0.862 0.736 0.646 S12 Ang. 174.4 153.0 134.4 130.3 112.2 100.0 97.2 83.9 71.8 49.4 28.4 9.0 -9.1 -27.0 -44.6 -63.5 -81.7 -98.5 -115.9 -134.3 -152.5 -168.8 177.0 161.7 S22 Ang. 85.7 69.4 56.3 53.3 41.6 34.4 32.8 25.6 19.4 7.9 -3.0 -12.7 -23.0 -33.1 -40.4 -53.2 -65.3 -76.9 -89.5 -102.7 -116.3 -128.0 -138.6 -151.9 Mag. 0.006 0.027 0.044 0.047 0.060 0.068 0.070 0.076 0.082 0.091 0.096 0.101 0.105 0.106 0.113 0.121 0.123 0.125 0.125 0.125 0.118 0.111 0.109 0.105 Mag. 0.752 0.712 0.654 0.636 0.560 0.509 0.498 0.443 0.390 0.295 0.225 0.183 0.150 0.101 0.047 0.078 0.162 0.231 0.275 0.339 0.438 0.524 0.586 0.636 Ang. -4.6 -22.1 -36.7 -39.6 -51.8 -59.0 -60.5 -67.5 -73.6 -87.3 -104.3 -120.8 -138.4 -149.7 -175.2 82.0 51.1 31.3 12.8 -5.5 -21.0 -32.0 -44.4 -58.1 MSG/MAG dB 33.38 26.60 24.00 23.57 21.79 20.70 20.45 19.50 18.63 17.27 16.22 10.47 9.34 8.32 7.99 8.33 8.19 7.98 7.68 7.43 6.85 5.58 5.27 6.28 Typical Noise Parameters, VDS = 2 V, IDS = 15 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S 21 | 2 (dB) Fmin dB 0.21 0.25 0.26 0.4 0.41 0.48 0.57 0.7 0.86 0.99 1.03 1.16 1.35 1.49 1.62 Γopt Mag. 0.627 0.56 0.53 0.51 0.5 0.41 0.35 0.22 0.2 0.23 0.23 0.29 0.35 0.43 0.54 Γopt Ang. 18.7 23.6 27.3 49.7 52.6 62.3 80.4 118.4 -176.5 -140.5 -134.6 -99.3 -69.3 -47.9 -30.8 Rn/50 0.1 0.1 0.1 0.09 0.09 0.09 0.08 0.06 0.06 0.08 0.08 0.14 0.25 0.39 0.57 Ga dB 25.41 23.47 23.02 19.44 19.09 17.81 16.17 14.25 12.6 11.77 11.6 10.86 10.22 9.48 8.47 40 35 30 25 20 15 10 5 0 -5 -10 0 5 10 FREQUENCY (GHz) 15 20 |S 21 | 2 MSG Figure 27. MSG/MAG and |S 21| 2 vs. Frequency at 2V, 15 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 8 ATF-55143 Typical Scattering Parameters, VDS = 2 V, IDS = 20 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.997 0.947 0.858 0.839 0.738 0.673 0.659 0.599 0.558 0.521 0.531 0.546 0.568 0.588 0.625 0.699 0.754 0.791 0.818 0.839 0.864 0.858 0.873 0.917 Ang. -7.5 -36.2 -61.3 -67.2 -92.4 -109.4 -113.5 -132.6 -150.6 174.4 142.8 117.4 95.6 74.4 55.2 36.8 20.9 6.9 -8.2 -23.8 -38.1 -51.1 -60.2 -70.4 dB 23.23 22.66 21.59 21.29 19.74 18.59 18.32 17.07 15.95 14.06 12.40 10.89 9.60 8.42 7.41 6.43 5.21 4.08 3.07 2.07 0.65 -0.95 -2.30 -3.41 S21 Mag. 14.512 13.582 12.011 11.602 9.703 8.5 8.238 7.135 6.272 5.047 4.171 3.505 3.021 2.637 2.348 2.097 1.823 1.60 1.424 1.269 1.078 0.896 0.768 0.675 S12 Ang. 174.2 151.8 132.8 128.6 110.4 98.3 95.5 82.4 70.5 48.5 28 8.9 -9 -26.7 -44.1 -62.9 -80.9 -97.5 -114.7 -133.1 -151 -167.3 178.6 163.4 S22 Ang. 85.5 69 56 53.2 42.1 35.5 34 27.5 21.8 11.1 0.7 -9 -19.4 -29.8 -37.5 -50.7 -63.2 -75.1 -87.8 -101.4 -114.9 -126.8 -137.5 -150.9 Mag. 0.006 0.026 0.041 0.044 0.056 0.063 0.065 0.071 0.077 0.086 0.093 0.099 0.104 0.106 0.115 0.123 0.125 0.127 0.128 0.127 0.12 0.113 0.111 0.106 Mag. 0.722 0.679 0.618 0.599 0.523 0.474 0.463 0.411 0.361 0.272 0.205 0.166 0.134 0.086 0.032 0.077 0.165 0.235 0.278 0.340 0.440 0.523 0.583 0.632 Ang. -4.8 -22.9 -37.7 -40.6 -52.5 -59.3 -60.7 -67.1 -72.7 -85.6 -102.3 -118.7 -136.5 -146.2 -171.2 71.3 46 27.6 9.8 -8.1 -22.8 -33.4 -45.6 -59 MSG/MAG dB 33.38 26.60 24.00 23.57 21.79 20.70 20.45 19.50 18.63 17.27 16.22 10.47 9.34 8.32 7.99 8.33 8.19 7.98 7.68 7.43 6.85 5.58 5.27 6.28 Typical Noise Parameters, VDS = 2 V, IDS = 20 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.21 0.25 0.26 0.39 0.4 0.48 0.56 0.69 0.85 0.98 1.02 1.16 1.34 1.49 1.62 Γopt Mag. 0.63 0.54 0.53 0.49 0.47 0.38 0.32 0.2 0.2 0.24 0.24 0.3 0.36 0.45 0.55 Γopt Ang. 18.4 24.4 28.8 50.6 52.8 63.6 82 125.1 -167.2 -133.4 -128.4 -94.8 -66.4 -45.7 -28.6 Rn/50 0.1 0.09 0.09 0.09 0.09 0.08 0.07 0.06 0.06 0.08 0.09 0.15 0.25 0.4 0.6 Ga dB 25.67 23.78 23.34 19.84 19.5 18.24 16.61 14.67 12.97 12.09 10.89 11.12 10.45 9.73 8.8 MSG/MAG and |S 21 | 2 (dB) 40 35 30 25 20 15 10 5 0 -5 -10 0 5 10 FREQUENCY (GHz) 15 20 |S 21 | 2 MSG Figure 28. MSG/MAG and |S 21| 2 vs. Frequency at 2V, 20 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 9 ATF-55143 Typical Scattering Parameters, VDS = 2.7V, IDS = 10 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.998 0.963 0.896 0.881 0.794 0.732 0.718 0.655 0.608 0.553 0.548 0.556 0.573 0.590 0.625 0.699 0.752 0.789 0.815 0.838 0.862 0.856 0.872 0.915 Ang. -6.4 -31.2 -53.8 -59.2 -83 -99.5 -103.4 -122.3 -140.2 -175.9 150.9 123.9 100.9 78.6 58.4 39.2 22.7 8.4 -7 -22.8 -37.2 -50.5 -59.7 -70 dB 20.86 20.46 19.68 19.44 18.21 17.25 17.01 15.94 14.96 13.28 11.74 10.30 9.04 7.89 6.94 6.03 4.89 3.78 2.78 1.81 0.37 -1.27 -2.73 -3.96 S21 Mag. 11.044 10.549 9.641 9.376 8.133 7.284 7.087 6.267 5.599 4.615 3.862 3.272 2.83 2.481 2.224 2.002 1.755 1.546 1.378 1.231 1.044 0.864 0.730 0.634 S12 Ang. 174.9 155 137.5 133.4 115.6 103.3 100.6 87.1 74.8 51.7 30.2 10.3 -8.3 -26.5 -44.3 -63.6 -82.3 -99.8 -117.8 -137 -155.9 -173.3 171.9 156 S22 Ang. 86.2 70.4 57.3 54.4 42.2 34.4 32.6 24.8 17.9 5.6 -5.4 -14.6 -23.9 -32.8 -38 -49.7 -61.1 -72.4 -84.7 -98.3 -111.8 -124.4 -135.6 -149.4 Mag. 0.006 0.026 0.043 0.047 0.06 0.068 0.07 0.076 0.082 0.089 0.092 0.094 0.096 0.096 0.102 0.112 0.115 0.12 0.122 0.124 0.119 0.113 0.111 0.107 Mag. 0.819 0.786 0.737 0.72 0.651 0.602 0.592 0.538 0.485 0.39 0.321 0.280 0.247 0.204 0.152 0.098 0.112 0.167 0.211 0.274 0.387 0.491 0.568 0.628 Ang. -3.9 -19.1 -32 -34.7 -46 -52.9 -54.5 -61.3 -67.3 -80.1 -94.7 -109 -124.1 -134.3 -146.7 166.8 100 62.3 37 12.6 -7.6 -21.5 -35.9 -51.2 MSG/MAG dB 32.65 26.08 23.51 23.00 21.32 20.30 20.05 19.16 18.34 17.15 16.23 10.63 9.27 8.16 7.82 8.34 8.24 8.17 7.93 7.71 7.14 5.78 5.49 6.84 Typical Noise Parameters, VDS = 2.7V, IDS = 10 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S 21 | 2 (dB) Fmin dB 0.2 0.26 0.27 0.39 0.4 0.48 0.57 0.72 0.88 1.02 1.04 1.19 1.39 1.54 1.65 Γopt Mag. 0.64 0.59 0.54 0.54 0.54 0.45 0.39 0.26 0.2 0.22 0.21 0.26 0.32 0.41 0.53 Γopt Ang. 19 22.7 26 48.3 49.9 59.8 75.6 108.7 167.5 -154.8 -147.8 -107.9 -75 -51.6 -33.6 Rn/50 0.12 0.12 0.12 0.11 0.11 0.1 0.09 0.07 0.06 0.07 0.08 0.13 0.23 0.36 0.54 Ga dB 25.29 23.24 22.76 19.01 18.66 17.35 15.69 13.79 12.26 11.52 11.37 10.76 10.2 9.48 8.38 35 30 25 20 MSG 15 10 5 0 -5 -10 0 5 10 FREQUENCY (GHz) 15 20 |S 21 | 2 Figure 29. MSG/MAG and |S 21| 2 vs. Frequency at 2.7V, 10 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 10 ATF-55143 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.997 0.947 0.860 0.840 0.739 0.672 0.658 0.597 0.554 0.515 0.523 0.538 0.559 0.579 0.615 0.690 0.748 0.787 0.816 0.841 0.867 0.862 0.877 0.921 Ang. -7.4 -35.8 -60.8 -66.6 -91.7 -108.6 -112.7 -131.7 -149.7 175.4 143.7 118.2 96.4 75.2 56 37.7 21.7 7.9 -7.3 -22.9 -37.3 -50.5 -59.7 -70 dB 23.29 22.72 21.67 21.37 19.83 18.68 18.41 17.16 16.04 14.17 12.55 11.06 9.78 8.62 7.65 6.73 5.57 4.48 3.5 2.55 1.15 -0.44 -1.83 -2.99 S21 Mag. 14.603 13.682 12.116 11.705 9.802 8.587 8.323 7.21 6.341 5.114 4.239 3.572 3.084 2.699 2.413 2.171 1.9 1.675 1.496 1.341 1.142 0.95 0.81 0.709 S12 Ang. 174.2 152 133 128.8 110.6 98.5 95.8 82.7 70.9 49.1 28.6 9.6 -8.4 -25.9 -43.3 -62.1 -80.3 -97.3 -114.9 -133.5 -152.1 -169 176.3 160.6 S22 Ang. 85.8 69.2 56.2 53.4 42.4 36 34.5 28.4 23 13.3 3.7 -5 -14.7 -24.2 -31 -44 -56.4 -68.5 -81.4 -95.1 -109.2 -121.9 -133.3 -147.1 Mag. 0.005 0.024 0.038 0.041 0.051 0.057 0.059 0.065 0.069 0.078 0.084 0.09 0.095 0.098 0.107 0.117 0.122 0.126 0.128 0.13 0.124 0.118 0.116 0.111 Mag. 0.755 0.713 0.652 0.633 0.56 0.513 0.503 0.455 0.409 0.328 0.267 0.232 0.201 0.162 0.113 0.055 0.096 0.164 0.210 0.277 0.386 0.483 0.555 0.612 Ang. -4.4 -21.1 -34.6 -37.3 -48 -54 -55.3 -60.9 -65.7 -76.7 -90.7 -104.8 -119.6 -127.4 -136.5 160.9 75.9 45.5 23.7 3 -14.3 -26.3 -39.5 -53.9 MSG/MAG dB 34.65 27.56 25.04 24.56 22.84 21.78 21.49 20.45 19.63 18.17 17.03 10.28 9.37 8.50 8.31 8.81 8.85 8.75 8.62 8.48 7.84 6.39 6.08 7.60 Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 0.20 0.25 0.26 0.39 0.4 0.47 0.56 0.69 0.85 0.98 1.01 1.15 1.32 1.47 1.58 0.65 0.55 0.53 0.49 0.48 0.38 0.32 0.19 0.18 0.22 0.22 0.29 0.35 0.44 0.54 17.6 23.6 28.3 49 51.5 62 79.6 120 -168.8 -135.4 -128.7 -94.6 -66.7 -45.7 -28.6 0.1 0.1 0.1 0.09 0.09 0.08 0.07 0.06 0.06 0.08 0.09 0.15 0.25 0.38 0.57 25.79 23.9 23.45 19.94 19.6 18.34 16.71 14.8 13.14 12.3 12.12 11.38 10.74 10.04 9.1 MSG/MAG and |S21 | 2 (dB) Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 40 35 30 25 20 15 10 5 0 -5 0 5 10 FREQUENCY (GHz) 15 20 |S 21 | 2 MSG Figure 30. MSG/MAG and |S 21 | 2 vs. Frequency at 2.7V, 20 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 11 ATF-55143 Typical Scattering Parameters, VDS = 3 V, IDS = 20 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.998 0.947 0.859 0.839 0.738 0.671 0.657 0.595 0.552 0.513 0.521 0.536 0.557 0.577 0.613 0.687 0.746 0.787 0.816 0.842 0.869 0.863 0.879 0.924 Ang. -7.4 -35.9 -60.9 -66.7 -91.8 -108.7 -112.7 -131.7 -149.8 175.4 143.8 118.3 96.5 75.3 56.2 38 22 8.1 -7 -22.6 -37 -50.2 -59.6 -69.8 dB 23.34 22.77 21.71 21.41 19.86 18.71 18.44 17.19 16.07 14.2 12.58 11.1 9.83 8.67 7.71 6.81 5.67 4.59 3.62 2.67 1.3 -0.29 -1.7 -2.87 S21 Mag. 14.697 13.762 12.178 11.764 9.844 8.621 8.354 7.233 6.36 5.13 4.256 3.588 3.1 2.715 2.43 2.192 1.922 1.697 1.516 1.36 1.161 0.967 0.822 0.719 S12 Ang. 174.2 151.9 132.9 128.7 110.5 98.5 95.7 82.7 70.9 49.1 28.7 9.7 -8.2 -25.8 -43.1 -61.8 -80.2 -97.2 -114.9 -133.6 -152.3 -169.6 175.6 159.7 S22 Ang. 85.1 69.2 56.2 53.5 42.5 36.2 34.8 28.7 23.5 14.2 4.9 -3.5 -12.9 -22.1 -28.7 -41.7 -54 -66.1 -79.1 -93 -107.2 -120.2 -131.9 -145.9 Mag. 0.005 0.023 0.037 0.039 0.050 0.055 0.057 0.062 0.067 0.075 0.081 0.087 0.092 0.095 0.105 0.116 0.121 0.126 0.128 0.131 0.126 0.1200 0.118 0.113 Mag. 0.763 0.721 0.661 0.642 0.570 0.524 0.514 0.468 0.423 0.345 0.287 0.254 0.224 0.187 0.140 0.075 0.084 0.145 0.191 0.256 0.369 0.471 0.548 0.608 Ang. -4.3 -20.6 -33.8 -36.3 -46.7 -52.5 -53.7 -59.1 -63.8 -74.3 -87.7 -101.6 -116.1 -124.3 -133.5 -178.8 94 54.4 30 8 -10.9 -23.5 -37.3 -52.2 MSG/MAG dB 34.68 27.77 25.17 24.79 22.94 21.95 21.66 20.67 19.77 18.35 11.97 10.25 9.37 8.51 8.39 8.96 9.02 9.06 8.93 8.92 8.24 6.61 6.30 8.42 Typical Noise Parameters, VDS = 3 V, IDS = 20 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S 21 | 2 (dB) Fmin dB 0.18 0.24 0.25 0.39 0.4 0.47 0.56 0.68 0.85 0.97 1.01 1.14 1.31 1.47 1.59 Γopt Mag. 0.63 0.54 0.53 0.48 0.47 0.39 0.32 0.19 0.19 0.22 0.22 0.28 0.35 0.44 0.54 Γopt Ang. 17.6 23.4 27.9 48.4 51.6 61.9 78.7 119.8 -170.4 -135.1 -128.4 -94.7 -66.8 -45.6 -28.9 Rn/50 0.1 0.1 0.1 0.09 0.09 0.08 0.07 0.06 0.06 0.08 0.09 0.14 0.25 0.38 0.57 Ga dB 25.89 23.98 23.53 20 19.66 18.4 16.77 14.85 13.21 12.37 12.2 11.47 10.84 10.15 9.22 40 35 30 25 20 15 10 5 0 -5 0 5 10 FREQUENCY (GHz) 15 20 |S 21 | 2 MSG Figure 31. MSG/MAG and |S 21 | 2 vs. Frequency at 3V, 20 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 12 ATF-55143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.996 0.937 0.840 0.819 0.712 0.646 0.631 0.571 0.531 0.499 0.512 0.529 0.552 0.573 0.609 0.684 0.744 0.786 0.816 0.842 0.870 0.866 0.882 0.927 Ang. -7.9 -38.1 -64.1 -70.1 -95.7 -112.8 -116.8 -135.8 -153.9 171.8 140.9 116 94.7 73.9 55.1 37.3 21.6 7.9 -7.2 -22.8 -37.1 -50.3 -59.7 -69.9 dB 24.3 23.64 22.44 22.11 20.43 19.2 18.91 17.59 16.42 14.49 12.84 11.35 10.07 8.91 7.94 7.05 5.91 4.83 3.86 2.93 1.56 -0.01 -1.4 -2.55 S21 Mag. 16.407 15.205 13.246 12.753 10.507 9.117 8.823 7.578 6.625 5.303 4.386 3.693 3.188 2.79 2.496 2.251 1.975 1.744 1.56 1.401 1.197 0.998 0.851 0.746 S12 Ang. 173.9 150.4 130.9 126.6 108.4 96.4 93.7 80.9 69.4 48.1 28.1 9.4 -8.3 -25.6 -42.7 -61.3 -79.5 -96.4 -113.9 -132.6 -151.1 -168.2 177 161.2 S22 Ang. 85.6 68.8 56.1 53.5 43.4 37.7 36.6 31.3 26.6 18.1 9.2 0.7 -9 -18.6 -25.8 -39.2 -51.9 -64.3 -77.5 -91.7 -106 -119.1 -130.8 -144.8 Mag. 0.005 0.021 0.034 0.036 0.046 0.051 0.052 0.057 0.062 0.071 0.078 0.085 0.092 0.096 0.107 0.118 0.123 0.128 0.131 0.133 0.128 0.122 0.12 0.115 Mag. 0.729 0.683 0.620 0.601 0.531 0.488 0.479 0.437 0.398 0.328 0.273 0.242 0.214 0.179 0.134 0.064 0.075 0.141 0.187 0.250 0.367 0.467 0.543 0.602 Ang. -4.5 -21.2 -34.3 -36.8 -46.5 -51.8 -52.9 -57.7 -61.8 -71.6 -84.7 -98.5 -112.9 -120.5 -128.4 -173.3 87.5 49.7 26.4 5.1 -12.6 -24.8 -38.2 -52.8 MSG/MAG dB 35.16 28.60 25.91 25.49 23.59 22.52 22.30 21.24 20.29 18.73 11.26 10.12 9.45 8.67 8.60 9.20 9.28 9.36 9.40 9.38 8.55 6.86 6.56 8.12 Typical Noise Parameters, VDS = 3 V, IDS = 30 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S 21 | 2 (dB) Fmin dB 0.19 0.25 0.26 0.41 0.42 0.49 0.59 0.72 0.88 1.02 1.06 1.2 1.37 1.53 1.66 Γopt Mag. 0.59 0.5 0.52 0.44 0.43 0.34 0.27 0.17 0.19 0.24 0.25 0.32 0.39 0.47 0.57 Γopt Ang. 18.4 25.5 30.7 50.6 54.5 65.1 84.7 132.6 -156.2 -125.3 -118.8 -88.8 -62.7 -43.1 -27 Rn/50 0.09 0.09 0.09 0.08 0.08 0.08 0.07 0.06 0.06 0.09 0.1 0.17 0.28 0.43 0.65 Ga dB 26.27 24.41 23.98 20.51 20.18 18.92 17.28 15.33 13.61 12.71 12.52 11.73 11.08 10.41 9.58 40 35 30 25 20 15 10 5 0 -5 0 5 10 FREQUENCY (GHz) 15 20 |S 21 | 2 MSG Figure 32. MSG/MAG and |S 21 | 2 vs. Frequency at 3V, 30 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 13 ATF-55143 Applications Information Introduction Agilent Technologies’s ATF-55143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz frequency range. As opposed to a typical depletion mode PHEMT where the gate must be made negative with respect to the source for proper operation, an enhancement mode PHEMT requires that the gate be made more positive than the source for normal operation. Therefore a negative power supply voltage is not required for an enhancement mode device. Biasing an enhancement mode PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7V base to emitter voltage, the ATF-55143 enhancement mode PHEMT requires about a 0.47V potential between the gate and source for a nominal drain current of 10 mA. Matching Networks The techniques for im pedance matching an enhancement mode device are very similar to those for matching a depletion mode device. The only difference is in the method of supplying gate bias. S and Noise Parameters for various bias conditions are listed in this data sheet. The circuit shown in Figure 1 shows a typical LNA circuit normally used for 900 and 1900 MHz applications (Consult the Agilent Technologies website for application notes covering specific applications). High pass impedance matching networks consisting of L1/C1 and L4/C4 pr ovide the appropriate match for noise figure, gain, S11 and S22. The high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving out-of-band rejection. INPUT Zo C1 Q1 L1 L2 R4 C2 L3 C5 R3 R5 R1 C3 R2 C6 C4 Zo OUTPUT L4 Vdd Figure 1. Typical ATF-55143 LNA with Passive Biasing. Capacitors C2 and C5 pr ovide a low impedance in-band RF bypass for the matching networks. Resistors R3 and R4 provide a very important low frequency termination for the device. The resistive termination improves low frequency stability. Capacitors C3 and C6 provide the low frequency RF bypass for resistors R3 and R4. Their value should be chosen carefully as C3 and C6 also provide a termination for low frequency mixing products. These mixing products are as a result of two or more inband signals mixing and producing third order in-band distortion products. The low frequency or difference mixing products are terminated by C3 and C6. For best suppression of third order distortion products based on the CDMA 1.25 MHz signal spacing, C3 and C6 should be 0.1 µF in value. Smaller values of capacitance will not suppress the generation of the 1.25 MHz difference signal and as a result will show up as poorer two tone IP3 results. Bias Networks One of the major advantages of the enhancement mode technology is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain cur rent Id. Whereas a depletion mode PHEMT pulls maximum drain current when Vgs = 0V, an enhancement mode PHEMT pulls only a small amount of leakage current when Vgs =0 V. Only when Vgs is increased above Vth , the device threshold voltage, will drain cur rent star t to flow. At a Vds of 2.7V and a nominal Vgs of 0.47V, the drain cur rent Id will be approximately 10 mA. The data sheet suggests a minimum and maximum Vgs over which the desired amount of drain current will be achieved. It is also important to note that if the gate terminal is lef t open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differential between the gate and source terminals. Passive Biasing Passive biasing of the ATF-55143 is accomplished by the use of a voltage divider consisting of R1 and R2. The voltage for the divider is deriv ed from the drain voltage which provides a form of voltage feedback through the use of R3 to help keep drain current constant. Resistor R5 (approximately 10 kΩ) is added to limit the gate current of enhancement mode devices such as the ATF-55143. This is especially important when the device is driven to P1dB or PSAT. Resistor R3 is calculated based on desired Vds , Ids and available power supply voltage. R3 = VDD – Vds Ids + IBB p (1) VDD is the power supply voltage. Vds is the device drain to source voltage. Ids is the desired drain current. IBB is the current flowing through the R1/R2 resistor voltage divider network. 14 The values of resistors R1 and R2 are calculated with the following formulas R1 = Vgs IBB p INPUT Zo C1 Q1 L1 L2 L3 C5 R4 C3 R6 C7 Q2 R7 R1 R2 C6 C4 Zo OUTPUT and rearranging equation (5) provides the following formula R1 = IBB VDD V – VB 1 + DD VB (5A) L4 C2 9 (2) R5 ( ) p R2 = (Vds – Vgs) R1 Vgs p (3) Vdd R3 Example Circuit VDD = 3V IBB = 0.5 mA Vds = 2.7V Ids = 10 mA R4 = 10 Ω V BE = 0.7V Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds and Ids through resistor R4 to be 2.8V. Equation (2) calculates the value of resistor R3 which determines the drain current Ids. In the example R3 =20 Ω. Equation (3) calculates the voltage required at the junction of resistors R1 and R2. This voltage plus the step-up of the base emitter junction determines the regulated Vds . Equations (4) and (5) are solved simultaneously to determine the value of resistors R1 and R2. In the example R1=4200 Ω and R2 =180 0 Ω. R7 is chosen to be 1kΩ. This resistor keeps a small amount of current flowing through Q2 to help maint ain bias stability. R6 is chosen to be 10kΩ. This value of resistance is necessary to limit Q1 gate current in the presence of high RF drive levels (especially when Q1 is driven to the P1dB gain compression point). C7 provides a low frequency bypass to keep noise from Q2 effecting the operation of Q1. C7 is typically 0.1 µF. Example Circuit VDD = 3V Vds = 2.7V Ids = 10 mA Vgs = 0.47V Choose IBB to be at least 10X the normal expected gate leakage current. IBB was conservatively chosen to be 0.5 mA for this example. Using equations (1), (2), and (3) the resistors are calculated as follows R1 = 940 Ω R2 = 4460 Ω R3 = 28.6 Ω Active Biasing Active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in de vice dc performance. The advantage of the active biasing of an enhancement mode PHEMT versus a depletion mode PHEMT is that a negative power source is not required. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor. Figure 2. Typical ATF-55143 LNA with ActiveBiasing. An active bias scheme is shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated VDD supply are present across resistor R3. Constant voltage across R3 provides a constant current supply for the drain current. Resistors R1 and R2 are used to set the desired Vds. The combined series value of these resistors also sets the amount of extra current consumed by the bias network. The equations that describe the circuit’s operation are as follows. VE = Vds + (Ids • R4) R3 = VDD – VE Ids (1) (2) p VB = VE – VBE VB = R1 V R1 + R2 DD p (3) (4) (5) VDD = IBB (R1 + R2) Rearranging equation (4) provides the following formula R2 = R1 (VDD – VB) VB (4A) p 15 ATF-55143 Die Model Advanced_Curtice2_Model MESFETM1 NFET=yes Rf= PFET=no Gscap=2 Vto=0.3 Cgs=0.6193 pF Beta=0.444 Cgd=0.1435 pF Lambda=72e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.5 Ohm Tnom=16.85 Rd=2.025 Ohm Idstc= Rg=1.7 Ohm Ucrit=-0.72 Vgexp=1.91 Rs=0.675 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.094 nH Betatce= Ls= Rgs=0.5 Ohm Cds=0.100 pF Rc=390 Ohm Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.95 Vbr= Vjr= Is= Ir= Imax= Xti= Eg= N= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= ATF-55143 ADS Package Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.143 pF TLINP TL4 Z=Z1 Ohm L=15 mil K=1 TLINP TL3 Z=Z2 Ohm L=25 mil K=K TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K GATE Port G Num=1 TLINP TL7 Z=Z2/2 Ohm L=5.0 mil K=K TLINP TL8 Z=Z1 Ohm L=15.0 mil K=1 SOURCE Port S2 Num=4 L L1 L=0.621 nH R=0.001 GaAsFET FET1 Mode1=MESFETM1 Mode=Nonlinear L L6 L=0.205 nH R=0.001 C C2 C=0.115 pF L L7 L=0.778 nH R=0.001 DRAIN TLINP TL6 Z=Z1 Ohm L=15.0 mil K=1 Port D Num=3 SOURCE Port S1 Num=2 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K L L4 L=0.238 nH R=0.001 MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K 16 Designing with S and Noise Parameters and the Non-Linear Model The non-linear model describing the ATF-55143 includes both the die and associat ed package model. The package model includes the effect of the pins but does not include the ef fect of the additional source inductance associated with grounding the source leads through the printed circuit board. The device S and Noise Parameters do include the effect of 0.020 inch thickness printed circuit board vias. When comparing simulation results between the measured S param- eters and the simulated nonlinear model, be sure to include the effect of the printed circuit board to get an accurate comparison. This is shown schematically in Figure 3. For Further Information The information presented here is an introduction to the use of the ATF-55143 enhancement mode PHEMT. More detailed application circuit information is a vailable from Agilent Technologies. Consult the web page or your local Agilent Technologies sales represent ative. VIA2 V1 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil DRAIN SOURCE VIA2 V3 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil ATF-55143 SOURCE VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil GATE VIA2 V4 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil Figure 3. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters. 17 Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measurements while t he Fmins below 2 GHz ha ve been extrapolated. The Fmin values are based on a set of 16 noise f igure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented wit h an impedance matching network that transforms the source impedance, typically 50 Ω, to an impedance represented by the reflection coefficient Γo. The designer must design a matching network that will present Γo to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise f igure of the device plus the losses of the matching netw ork preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with Γo. If the ref lection coefficient of the matching network is other than Γo, then the noise figure of the device will be g reater than Fmin based on t he following equation. NF = Fmin + 4 Rn |Γs – Γo | 2 Zo (|1 + Γo| 2) (1 - |Γs| 2) Where Rn /Zo is the normalized noise resistance, Γo is the optimum reflection coefficient required to produce Fmin and Γs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. Γo is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower Γo as compared to narrower gate width devices. Typically for FETs, the higher Γo usually infers that an impedance much higher than 50Ω is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using multilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Technologies Application 1085. 18 Ordering Information Part Number ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK No. of Devices 3000 10000 100 Container 7” Reel 13” Reel antistatic bag Package Dimensions Outline 43 SOT-343 (SC70 4-lead) 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E E1 1.30 (.051) 0.55 (.021) TYP 1.15 (.045) BSC e D h 1.15 (.045) REF 0.85 (.033) A b TYP A1 L θ DIMENSIONS C TYP SYMBOL A A1 b C D E e h E1 L θ MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) 19 Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm Tape Dimensions For Outline 4T P P0 D P2 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 8° MAX. K0 5° MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 8.00 ± 0.30 0.255 ± 0.013 5.4 ± 0.10 0.062 ± 0.001 3.50 ± 0.05 2.00 ± 0.05 SIZE (INCHES) 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 0.315 ± 0.012 0.010 ± 0.0005 0.205 ± 0.004 0.0025 ± 0.00004 0.138 ± 0.002 0.079 ± 0.002 PERFORATION CARRIER TAPE COVER TAPE DISTANCE www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5988-3190EN July 18, 2001 5988-3587EN 20 当社半導体部品のご使用にあたって 仕様及び仕様書に関して ・本仕様は製品改善および技術改良等により予告なく変更する場合があります。 ご使用の際には最 新の仕様を問い合わせの上、用途のご確認をお願いいたします。 ・本仕様記載内容を無断で転載または複写することは禁じられております。 ・本仕様内でご紹介している応用例 （アプリケーション） は当社製品がご使用できる代表的なもの です。 ご使用において第三者の知的財産権などの保証または実施権の許諾に対して問題が発生し た場合、当社はその責任を負いかねます。 ・仕様書はメーカとユーザ間で交わされる製品に関する使用条件や誤使用防止事項を言及するもの です。仕様書の条件外で保存、使用された場合に動作不良、機械不良が発生しても当社は責任を 負いかねます。ただし、当社は納品後 1 年以内に当社の責任に帰すべき理由で、不良或いは故障 が発生した場合、無償で製品を交換いたします。 ・仕様書の製品が製造上および政策上の理由で満足できない場合には変更の権利を当社が有し、 そ の交渉は当社の要求によりすみやかに行われることとさせて頂きます。 なお、 基本的に変更は3ヶ 月前、廃止は 1 年前にご連絡致しますが、例外もございますので予めご了承ください。 ご使用用途に関して ・当社の製品は、一般的な電子機器（コンピュータ、OA 機器、通信機器、AV 機器、家電製品、ア ミューズメント機器、 計測機器、 一般産業機器など） の一部に組み込まれて使用されるものです。 極めて高い信頼性と安全性が要求される用途（輸送機器、航空・宇宙機器、海底中継器、原子力 制御システム、 生命維持のための医療機器などの財産・環境もしくは生命に悪影響を及ぼす可能 性を持つ用途）を意図し、設計も製造もされているものではありません。それゆえ、本製品の安 全性、品質および性能に関しては、仕様書（又は、カタログ）に記載してあること以外は明示的 にも黙示的にも一切の保証をするものではありません。 回路設計上のお願い ・当社は品質、信頼性の向上に努力しておりますが、一般的に半導体製品の誤動作や、故障の発生 は避けられません。本製品の使用に附随し、或いはこれに関連する誤動作、故障、寿命により、 他人の生命又は財産に被害や悪影響を及ぼし、 或いは本製品を取り付けまたは使用した設備、 施 設または機械器具に故障が生じ一般公衆に被害を起こしても、当社はその内容、程度を問わず、 一切の責任を負いかねます。 お客様の責任において、装置の安全設計をお願いいたします。 21