ATF36077

2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz • Low Parasitic Ceramic Microstrip Package • Tape-and-Reel Packing Option Available Description Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades. ASSOCIATED GAIN (dB) 77 Package Pin Configuration 4 SOURCE Applications • 12 GHz DBS LNB (Low Noise Block) • 4 GHz TVRO LNB (Low Noise Block) • Ultra-Sensitive Low Noise Amplifiers Note: 1. See Noise Parameter Table. 1 GATE 360 3 DRAIN 2 SOURCE 25 20 Ga 1.2 NOISE FIGURE (dB) 15 0.8 NF[1] 10 The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broadcast Satellite (DBS) Television systems, C-band Television Receive Only (TVRO) LNAs, or other low noise amplifiers operating in the 2-18 GHz frequency range. This GaAs PHEMT device has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold based metalization systems and nitride passivation assure rugged, reliable devices. 5965-8726E 0.4 0 0 4 8 12 16 20 FREQUENCY (GHz) Figure 1. ATF-36077 Optimum Noise Figure and Associated Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA. 5-75 ATF-36077 Absolute Maximum Ratings Symbol VDS VGS VGD ID PT Pin max Tch TSTG Parameter Drain – Source Voltage Gate – Source Voltage Gate-Drain Voltage Drain Current Total Power Dissipation[3] RF Input Power Channel Temperature Storage Temperature Units V V V mA mW dBm °C °C Absolute Maximum[1] + 3 -3 -3.5 Idss 180 +10 150 -65 to 150 Thermal Resistance[2,3]: θch-c = 60°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Measured at Pdiss = 15 mW and Tch = 100°C. 3. Derate at 16.7 mW/ °C for TC > 139°C. ATF-36077 Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol NF GA gm Idss Vp 10 % Parameters and Test Conditions Noise Figure[1] Gain at NF[1] Transconductance Saturated Drain Current Pinch-off Voltage f = 12.0 GHz f = 12.0 GHz VDS = 1.5 V, VGS = 0 V VDS = 1.5 V, VGS = 0 V VDS = 1.5 V, IDS = 10% of Idss Units dB dB mS mA V 11.0 50 15 -1.0 Min. Typ. 0.5 12.0 55 25 -0.35 45 -0.15 Max. 0.6 Note: 1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°. ATF-36077 Characterization Information, TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted). Symbol NF GA S12 off P1dB VGS 10 mA Parameters and Test Conditions Noise Figure (Tuned Circuit) Gain at Noise Figure (Tuned Circuit) Reverse Isolation Output Power at 1 dB Gain Compression Gate to Source Voltage for IDS = 10 mA f = 4 GHz f = 12 GHz f = 4 GHz f = 12 GHz f = 12 GHz, VDS = 1.5 V, VGS = - 2 V f = 4 GHz f = 12 GHz VDS = 1.5 V Units dB dB dB dB dB dBm dBm V Typ. 0.3[2] 0.5 17 12 14 5 5 -0.2 Note: 2. See noise parameter table. 5-76 ATF-36077 Typical Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA Freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.99 0.97 0.94 0.90 0.86 0.82 0.78 0.75 0.72 0.69 0.66 0.63 0.61 0.60 0.58 0.57 0.56 0.57 Ang. -17 -33 -49 -65 -79 -93 -107 -120 -133 -146 -159 -172 175 161 147 131 114 97 dB 14.00 13.81 13.53 13.17 12.78 12.39 12.00 11.64 11.32 11.04 10.81 10.63 10.50 10.41 10.36 10.34 10.34 10.35 S21 Mag. 5.010 4.904 4.745 4.556 4.357 4.162 3.981 3.820 3.682 3.566 3.473 3.401 3.349 3.315 3.296 3.289 3.289 3.291 S12 Mag. 0.016 0.030 0.043 0.054 0.063 0.069 0.074 0.078 0.080 0.082 0.083 0.085 0.086 0.087 0.089 0.091 0.092 0.094 S22 Ang. 78 66 54 43 33 24 16 8 1 -6 -13 -19 -25 -32 -39 -47 -55 -65 Mag. 0.60 0.59 0.57 0.55 0.53 0.50 0.48 0.46 0.44 0.42 0.40 0.38 0.37 0.35 0.33 0.31 0.29 0.26 Ang. -14 -28 -41 -54 -66 -78 -89 -99 -109 -119 -129 -139 -149 -160 -171 177 164 148 Ang. 163 147 132 116 102 88 75 62 49 37 25 13 1 -12 -24 -37 -50 -64 dB -36.08 -30.33 -27.25 -25.32 -24.04 -23.17 -22.58 -22.17 -21.90 -21.71 -21.57 -21.44 -21.32 -21.19 -21.04 -20.87 -20.69 -20.53 ATF-36077 Typical “Off” Scattering Parameters, Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, VGS = - 2 V Freq. GHz 11.0 12.0 13.0 S11 Mag. 0.96 0.95 0.94 Ang. -139 -152 -166 dB -14.2 -14.0 -13.8 S21 Mag. 0.19 0.20 0.20 Ang. -43 -56 -69 S21 Mag. 0.19 0.20 0.20 S22 Ang. -43 -56 -68 Mag. 0.97 0.97 0.96 Ang. -125 -137 -149 dB -14.2 -14.0 -13.8 5-77 ATF-36077 Typical Noise Parameters, Freq. GHz 1 2 4 6 8 10 12 14 16 18 Fmin[1] dB 0.30 0.30 0.30 0.30 0.37 0.44 0.50 0.56 0.61 0.65 Γopt Mag. 0.95 0.90 0.81 0.73 0.66 0.60 0.54 0.48 0.43 0.39 Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA Ang. 12 25 51 76 102 129 156 -174 -139 -100 Rn /Zo 0.40 0.20 0.17 0.13 0.09 0.05 0.03 0.02 0.05 0.09 GAIN (dB) 25 20 MSG MAG 15 S21 10 5 0 0 4 8 12 16 20 FREQUENCY (GHz) Figure 2. Maximum Available Gain, Maximum Stable Gain and Insertion Power Gain vs. Frequency. VDS = 1.5 V, ID = 10 mA. Note: 1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that will be encountered when matching to the optimum reflection coefficient (Γopt) at these frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at 2 GHz, 0.20 dB at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from associated s parameters, packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz. 77 Package Dimensions 1.02 (0.040) SOURCE 4 .51 (0.020) 1 GATE Part Number Ordering Information Part Number ATF-36077-TRl[2] ATF-36077-STR No. of Devices 1000 10 Container 7" Reel strip 3 DRAIN Note: 2. For more information, see “Tape and Reel Packaging for Semiconductor Devices,” in “Communications Components” Designer‘s Catalog. SOURCE 2 1.78 (0.070) 360 5.28 (0.208) 1.22 (0.048) 1.75 (0.069) .53 (0.021) .10 (0.004) TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES). 5-78